Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Influence of substrate temperatures on optical and electrical properties of ZnO:Al thin films

기판온도가 AZO 박막의 광학적 및 전기적 특성에 미치는 영향

  • 정윤근 (전남대학교 정보소재공학과) ;
  • 정양희 (전남대학교 전기 및 반도체 공학과) ;
  • 강성준 (전남대학교 전기 및 반도체 공학과)
  • Published : 2009.01.30
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Abstract

The 3wt.% Al-doped zinc oxide (AZO) thin films were fabricated on Coming 1737 substrates at a fixed oxygen pressure of 200 mTorr with various substrate temperatures ($100\;{\sim}\;250^{\circ}C$) by using pulsed laser deposition in order to investigate the microstructure, optical, and electrical properties of AZO thin films. All thin films were shown to be c-axis oriented, exhibiting only a (002) diffraction peak. The AZO thin film, fabricated at 200 mTorr and $250^{\circ}C$, showed the highest (002) orientation and the full width at half maximum (FWHM) of the (002) diffraction peak was $0.44^{\circ}$. The optical transmittance in the visible region was higher than 85 %. The Burstein-Moss effect, which shifts to a high photon energy, was observed. The electrical property indicated that the highest carrier concentration ($3.48{\times}10^{20}cm^{-3}$) and the lowest resistivity ($1.65{\times}10^{-2}{\Omega}cm$) were obtained in the AZO thin film fabricated at 200 mTorr and $250^{\circ}C$.

PLD 법으로 3 wt.% Al이 도핑된 ZnO 타겟을 이용하여 corning 1737 기판위에 200 mTorr의 고정된 산소 분압에서 기판온도 ($100\;{\sim}\;250^{\circ}C$)에 따른 AZO 박막의 구조적, 광학적, 전기적 특성을 조사하였다. 모든 박막들은 c 축 배향되었으며, 오직 (002) 회절 피크만 관찰되었다. $250^{\circ}C$에서 제작한 AZO 박막에서 가장 우수한 (002) 배향성을 보였으며, 이때의 반가폭 값은 $0.44^{\circ}$ 였다. 모든 박막이 가시광 영역에서 85 % 이상의 투과율을 보였으며, Burstein-Moss 효과가 관찰되었다. 전기적 특성은 $250^{\circ}C$에서 제작한 박막에서 가장 우수한 캐리어 농도 ($3.48{\times}10^{20}cm^{-3}$)와 비저항 ($1.65{\times}10^{-2}{\Omega}cm$) 값을 나타냈다.

Keywords

References

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