• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.39-39
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• 1996

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.1
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• pp.115-120
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• 2009

The 3wt.% Al-doped zinc oxide (AZO) thin films were fabricated on Coming 1737 substrates at a fixed oxygen pressure of 200 mTorr with various substrate temperatures ($100\;{\sim}\;250^{\circ}C$) by using pulsed laser deposition in order to investigate the microstructure, optical, and electrical properties of AZO thin films. All thin films were shown to be c-axis oriented, exhibiting only a (002) diffraction peak. The AZO thin film, fabricated at 200 mTorr and $250^{\circ}C$, showed the highest (002) orientation and the full width at half maximum (FWHM) of the (002) diffraction peak was $0.44^{\circ}$. The optical transmittance in the visible region was higher than 85 %. The Burstein-Moss effect, which shifts to a high photon energy, was observed. The electrical property indicated that the highest carrier concentration ($3.48{\times}10^{20}cm^{-3}$) and the lowest resistivity ($1.65{\times}10^{-2}{\Omega}cm$) were obtained in the AZO thin film fabricated at 200 mTorr and $250^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.93-94
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• 2008

양이온 금속원소(Al)와 음이온 할로겐 원소(F) 및 수소를 다중 도핑한 ZnO 박막을 rf 마그네트론 스퍼터를 이용하여 코닝 글라스에 증착하여 도핑량과 진공중에서의 열처리에 따른 전기적 및 광학적 특성에 대하여 고찰하였다. 양이온이 할로겐 및 수소와 동시에 도핑될 시, 금속이온의 농도가 낮은 것이 TCO 박막의 전기적 특성 향상에 유리하게 작용하는 것으로 나타났으며, 동일한 F 함량에 대하여는 수소가 증가할수록 박막의 전기적 특성이 향상되는 것으로 나타났다. 그러나 열처리에 따른 F와 H의 거동은 반대로 나타나서, 최적의 상대적인 도핑 조성이 있음을 시사하였고, 36.2 $cm^2$/Vs의 높은 흘 이동도와 $2.9\times10^{-4}{\Omega}cm$의 낮은 비저항을 가지는 ZnO계 박막의 제조가 가능하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.101-102
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The un doped ZnO thin films were grown on c-$Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.