• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.136-137
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• 2007

In this study, a single ZnO nanowire - CdTe nanoparticle nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of ZnO nanowire-based field effect transistor (FET) devices with CdTe nanoparticles embedded in the $Al_2O_3$ gate materials and without the CdTe nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.475-475
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• 2011

현재 수열합성법으로 이용하여 1차원으로 수직 성장한 ZnO 나노와이어는 밴드 갭이 3.37ev로 큰 밴드 갭을 갖는 물질이며 밀도 조절이 매우 어려운 것으로 알려져 있다. ZnO 나노와이어는 기존의 리소그래피 기반을 둔 Top-Down 방식과 달리 자발적인 형성과정으로 높은 결정성을 가지게 되는데, 이는 ZnO 나노와이어가 큰 종횡비 와 전자친화도를 가지고 있어 높은 전계방출 효과를 기대하게 되는 부분이다. 본 연구에서는 실버를 열처리하여 형성된 실버 나노파티클을 마스킹층으로 사용하여 ZnO 나노와어의 밀도 조절을 하고자 하였다. 실버막을 AZO seed layer 기판 위에 증착한뒤 $200{\sim}600^{\circ}C$ 까지 열처리 후 수열합성법을 이용하여 ZnO nanowire를 성장하였다. 또한 전구체인 ZN(NO3)2${\cdot}$6H2O 와 HMT 에 각각 Ammonium chloride와 PEI를 첨가하였고, PEI 의 몰농도를 변화하여 성장된 ZnO 나노와이어의 구조적, 광학적 특성을 평가함으로서 전자소자 적용 가능성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.603-603
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• 2013

3D 배열구조의 Vertical nanowire Integrated Nanogenerator (VING)은 낮은 출력, 유연 기판 상에 부적합, 나노선의 부서지기 쉬움, 장기 안정성, 균일한 나노선의 성장을 필요로 하는 문제점을 가지고 있다. 본 연구에서는 이러한 VING방식의 단점을 보완하여 2D 배열 구조의 Lateral nanowire Integrated Nanogenerator (LING)로 고출력 전압, 유연기판의 상에 적합 등을 개선하는 방향으로 연구를 하였다. 본 연구의 실험 방법으로는 RF magnetron sputter를 이용하여 AZO Seedlayer를 제작하였으며 제작된 AZO Seedlayer를 photolithography 공정으로 제작하였다. 패터닝된 샘플을 Hydro thermal synthesis method로 성장시켰다. 구조적 분석으로는 XRD, FE-SEM 등을 이용하여 측정하였다.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.766-769
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• 2008

Zinc oxide (ZnO) nanowires were prepared on Si substrates by a thermal evaporation method at different temperatures and $O_2$ pressure. Microstructural analysis of the obtained ZnO nanowires was performed by using transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Phase analysis was done using X-ray diffraction(XRD). As the deposition temperature and oxygen pressure were increased, the diameter and length of ZnO nanowires had a tendency to increase. Based on TEM and XRD analyses, the nanowires are single crystalline in nature and consist of a single phase. According to the measurements, the ZnO nanowires grown at 1100$^{\circ}C$, Ar 50 sccm, $O_2$ 10 sccm have good properties.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.259-265
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• 2009

We fabricated the field effect transistor using single crystalline ZnO nanowires synthesized by a conventional thermal evaporation method and investigated their basic properties under the various conditions such as ultraviolet irradiation, reducing gas and electrolyte. The typical carrier concentration and mobility of the single crystalline ZnO nanowire with a diameter of 100 nm and length of 5 um were $1.30{\times}10^{18}cm^{-3}$ and $15.6cm^2V^{-1}s^{-1}$, respectively. The current of ZnO nanowire under ultraviolet irradiation significantly increased about 400 times higher as compared to in the darkness. In addition, the ZnO nanowire showed typical sensing characteristics for $H_2$ and CO due to well-known surface reactions and typical current-voltage characteristics under the 0.1 M NaCl electrolyte.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.334-337
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• 2015

Pure ZnO, ZnO nanowires doped with 3 wt.% Ga (3GZO) and doped with 3 wt.% Ag (3SZO) were grown by a hot-walled pulse laser deposition (HW-PLD) technique. The optical and chemical properties of Ga and Ag doped nanowires was analyzed. Nanowires were determined to be under 200 nm in diameter and several μm in length. Change of significant resistance was observed and the gas detection sensitivities of ZnO, 3GZO and 3SZO nanawires were compared. The sensitivities of ZnO, 3GZO, and 3SZO nanowire sensors were measured at 300℃ for 1 ppm of ethanol gas at 97%, 48%, and 203%, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1297-1298
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• 2006

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60 nm are coated surroundingly by $Al_{2}O_{3}$ as gate dielectrics with atomic layer deposition. About 80 % of the surfaces of the nanowires coated with $Al_{2}O_{3}$ is covered with gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 98.9 $cm^{2}/Vs$, a peak transconductance of 0.4 ${\mu}S$, and an Ion/Ioff ratio of $10^6$ the value of the Ion/Ioff ratio obtained from this OSG FET is the highest among nanowire-based FETs, to our knowledge. Its mobility, peak transconductance, and Ion/Ioff ratio arc remarkably enhanced by 11.5, 32, and $10^6$ times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.601-602
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• 2011

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.78-81
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• 2015

Pure ZnO and ZnO nanowires doped with 3 wt.% Ga (‘3GZO’) were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several ${\mu}m$, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300℃ for 1 ppm of ethanol gas were 97% and 48%, respectively.