• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1531-1532
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• 2006

Recently, the natural environment changes drastically, and the frequency of occurrence for lightning has gradually been increased. Such lightning delivers high volume of energy along the power line and communication line to the equipment in use. The high volume of energy arising from the lightning surge develops in fast velocity to destroy the facilities in power source and many other facilities in operation in sequential destruction with vast energy. In this thesis, the analysis on the change of clamping voltage characteristics by the contact resistance and lead inductance by using several case studies through the application of element for preventing the short circuit of Metal Oxide Varistor for ZnO.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.671-679
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• 2018

Finite element analyses are carried out to understand the piezoelectric behaviors of ZnO nanowires. Three different types of ZnO nanowires, with aspect ratios of 1:2. 1:31, and 1:57, are analyzed for uniaxial compression, pure bending, and buckling. Under the uniaxial compression with a strain of $1.0{\times}10^{-4}$ as the reference state, it is predicted that all three types of nanowires develop the same magnitude of the piezoelectric fields, which suggests that longer nanowires exhibit higher piezoelectric potential. However, this prediction is not in agreement with the experimental results previously reported in the literature. Such discrepancy is understood when the piezoelectric behaviors under bending and buckling are considered. When only the strain field due to bending is present in bending or buckling, the antisymmetric nature of the through-thickness stain distribution indicates that two piezoelectric fields, the same in magnitude and opposite in sign, develop along the thickness direction, which cancels each other out, resulting in a zero net piezoelectric field. Once additional strain contribution due to axial deformation is superposed on the bending, such field cancelling is compensated for due to the axial component of the piezoelectric field. Such numerical predictions seem to explain the reported experimental results while providing a guideline for the design of nanowire-based piezoelectric devices.

• Korean Journal of Materials Research
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• v.31 no.1
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• pp.43-53
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• 2021

Dynamic behavior of piezoelectric ZnO nanowires is investigated using finite element analyses (FEA) on FE models constructed based on previous experimental observations in which nanowires having aspect ratios of 1:2. 1:31, and 1:57 are obtained during a hydrothermal process. Modal analyses predict that nanowires will vibrate in lateral bending, uniaxial elongation/contraction, and twisting (torsion), respectively, for the three ratios. The natural frequency for each vibration mode varies depending on the aspect ratio, while the frequencies are in a range of 7.233 MHz to 3.393 GHz. Subsequent transient response analysis predicts that the nanowires will behave quasi-statically within the load frequency range below 10 MHz, implying that the ZnO nanowires have application potentials as structural members of electromechanical systems including nano piezoelectric generators and piezoelectric dynamic strain sensors. When an electric pulse signal is simulated, it is predicted that the nanowires will deform in accordance with the electric signal. Once the electric signal is removed, the nanowires exhibit a specific resonance-like vibration, with the frequency synchronized to the signal frequency. These predictions indicate that the nanowires have additional application potential as piezoelectric actuators and resonators.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.368-375
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• 2018

This study deals with the color formation of ceramic pigment in the $TiO_2$-SnO-ZnO system. We designed compounds to control the color formation depending on the composition using the Design of Experiment. The color coordinate values of synthesized pigments, $L^*a^*b^*$ were measured and statistically analyzed color for changing elements depending on its composition. The relationship between the major crystalline phases and chromaticity was examined using XRD, and the oxidation states of each element were analyzed by XPS. The synthesized pigments based on the compound design exhibited various color changes ranging from yellow-orange to green-blue and brown. The statistical analysis on the spectrophotometer results shows that $a^*$ and $b^*$ values decreased with $TiO_2$ content, and increased with SnO content. Yellow-orange color was detected with the main peak of SnO, and the green-blue color developed with the main peak of $Zn_2TiO_4$. The $a^*$ and $b^*$ values increased with increased SnO peak intensity, and decreased with increased $Zn_2TiO_4$ peak intensity. The results revealed that pigment color formation was influenced by changes in the main crystalline phases and crystalline intensity. However, XPS analysis of the oxidation states of each element showed little correlation with the pigment chromaticity result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.685-690
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• 2010

ZnO with the wide band gap near 3.37 eV is typically an n-type semiconductor in which deviation from stoichiometry is electrically active. It was known that the films with a resistivity of the order of $10^{-4}{\Omega}cm$ is not easy to obtain. In order to improve electrical characteristic of ZnO, we added 1, 3, 5 wt% Ga element in ZnO. The Ga-doped ZnO (GZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of GZO films showed preferable crystal orientation of (002) plane. The lowest resistivity of the GZO films was $8.9{\times}10^{-4}{\Omega}cm$. GZO films significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.111-117
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• 2009

This paper presents the characteristics of leakage currents flowing through zinc oxide (ZnO) surge arrester elements under the combined direct-current (DC) and 60 Hz alternating-current (AC) voltages. The current-voltage characteristic curves (I-V curves) of the commercial ZnO surge arrester elements were obtained as a function of the voltage ratio a. At constant peak value of the combined DC and AC voltage, the resistive leakage current of the ZnO blocks was significantly increased as the voltage ratio $\alpha$ increased. The I-V curves under the combined DC and AC voltages were placed between the pure DC and AC characteristics, and the cross-over phenomenon in both the I-V curves and R-V curves was observed at the low current region. The ZnO power dissipation for DC voltages was less than that for AC voltage in the pre-breakdown region and reversed at higher voltages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.480-485
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• 2011

ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.118.2-118.2
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• 2017

Combustion behavior of Fe, CuO, NiO, ZnO and $Fe_2O_3$ powder mixture was carried out by finite element method (FEM) to understand a reaction at iron and metal oxide interface. The FEM was done by using ANSYS Fluent 17.0. Initial and boundary conditions are 1 atmosphere, room temperature, 0.1MPa of oxygen partial pressure, $T_{S1}=1127^{\circ}C$, $T_{S2}=327^{\circ}C$ for a cylindrical shape specimen with dia. $35{\times}80$ [mm]. The maximum combustion temperature is $1537^{\circ}C$ for the condition of conduction, convection and radiation. The combustion temperature and rate are about $847^{\circ}C$ and 3.9mm/sec, respectively. The combustion wave is enough to make ternary ferrite phase like $CuNiZnFe_2O_3$.

• Economic and Environmental Geology
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• v.45 no.6
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• pp.623-641
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• 2012

The Janggun lead-zinc-silver deposit is hydrothermal-metasomatic deposit. We have sampled wallrock, hydrother-maly-altered rock and lead-zinc-silver ore vein to study the element dispersion during wallrock alteration. The hydrothermal alteration that is remarkably recognized at this deposit consists of rhodochrositization and dolomitization. Wallrock is dolomite and limestone that consisit of calcite, dolomite, quartz, phlogopite and biotite. Rhodochrosite zone occurs near lead-zinc-silver ore vein and include mainly rhodochrosite with amounts of calcite, dolomite, kutnahorite, arsenopyrite, pyrite, chalcopyrite, sphalerite, galena and stannite. Dolomite zone occurs far from lead-zinc-silver ore vein and is composed of mainly dolomite and minor calcite, rhodochrosite, pyrite, sphalerite, chalcopyrite, galena and stannite. The correlation coefficients among major, trace and rare earth elements during wallrock alteration show high positive correlations(dolomite and limestone = $Fe_2O_3(T)$/MnO, Ga/MnO and Rb/MnO), high negative correlations(dolomite = MgO/MnO, CaO/MnO, $CO_2$/MnO, Sr/MnO; limestone = CaO/MnO, Sr/MnO). Remarkable gain elements during wallrock alteration are $Fe_2O_3(T)$, MnO, As, Au, Cd, Cu, Ga, Pb, Rb, Sb, Sc, Sn and Zn. Remarkable loss elements are CaO, $CO_2$, MgO and Sr. Therefore, elements(CaO, $CO_2$, $Fe_2O_3(T)$, MgO, MnO, Ga, Pb, Rb, Sb, Sn, Sr and Zn) represent a potential tools for exploration in hydrothermal-metasomatic lead-zinc-silver deposits.