• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.139-142
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• 1990

A gas sensor, comprised of both ZnO and $PdCl_2$ powders, has been developed to sense the CO gas of low concentration (100 ppm). When the weight ratio of ZnO/$PdCl_2$ element sintered at $600^{\circ}C$ was 99.5/0.5, the maximum sensitivity to CO gas was obtained at the operating temperature of $200^{\circ}C$. Also, the response characteristics of this element were examined, and then the response time was decreased from 90 to 45 sees, with operating temperature increase in the range of $100-400^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2155-2157
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• 1999

This paper describes a new measurement method of resistive current and the technique of deterioration diagnosis for ZnO element. The consequence of current increasing (resistive current) with time is the eventual attainment of a state of thermal instability that may lead to arrester failure. So, it is very important to measure a leakage current of ZnO arrester installed at on-state. For the high-precision and more reliability, an iron core, which has a very high relative permeability, was used for increasing detection sensitivity, and we also used the personal computer for the data storage and program and analysis. And we have verified the reliability and performance of the sensing device through several laboratory tests.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1740-1742
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• 1998

This paper describes the technique of deterioration diagnosis for ZnO element. Due to the non-linear resistance of ZnO block, the total leakage current contains harmonics when arrester deteriorated. The most significant harmonics is the 3rd order component. So, it can be used as an indicator of the arrester condition. An iron core, which has a very high relative permeability, is used for increasing detection sensitivity and the 3th order harmonics of leakage current was detected by band-pass circuit. And we have verified the reliability and performance of the sensing device through several laboratory tests.

• 한국재료학회지
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• 제28권2호
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• pp.101-107
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• 2018

Li-incorporated ZnO thin films were deposited by using ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of Li-incorporation on the performance of ZnO thin films, the structural, electrical, and optical properites of the ZnO thin films were analyzed by means of X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), Hall effect measurement, and UV-Vis spectrophotometry with variation of the Li concentraion in the ZnO sources. Without incorporation of Li element, the ZnO surface showed large spiral domains. As the Li content increases, the size of spiral domains decreased gradually, and finally formed mixed small grain and one-dimensional nanorod-like structures on the surface. This morphological evolution was explained based on an anti-surfactant effect of Li atoms on the ZnO growth surface. In addition, the Li-incorporation changed the optical and electrical properties of the ZnO thin films by modifying the crystalline defect structures by doping effects.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.209-212
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• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. The advantage of thick-film technology include the possibility of mass-production and automation, that of integrating the sensing element in a hybrid circuit and that of fuctional trimming of the sensor and/or the circuit. which would enable really interchangeable transducers to be prepared. In this paper, we made ZnO and $SnO_2$ gas sensors and investigated the sensitivity to CO gas. Therefore, we compared a ZnO gas sensor with a $SnO_2$ gas sensor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.733-736
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• 1992

In this paper, Finite Element Method was used for the analysis of Potential Distribution of ZnO varistor and visualizing the characteristics of conduction mechanism. The results can be obtained by 2-dimensional element division and numerical method for Poisson's equation.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.391-396
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• 2023

Recently, as power and electronic devices have increased in frequency and capacity, it has become a major concern to protect electronic circuits and electronic components used in these devices from abnormal voltages such as various surges and pulse noise. To respond to variously rated voltages applied to power electronic devices, the rated voltages of various varistors can be obtained by controlling the size of internal particles of the varistor or controlling the number of layers of the varistor. During bonding, the problem of unbalanced thermal runaway occurring between the electrode and the varistor interface causes degradation of the varistor and shortens its life of the varistor. In this study, to solve the problem of unbalanced heat distribution of stacked varistors to adjust the operating voltage, the contents of the ZnO-based varistor composition were 96 wt% ZnO, 1 mol% Sb₂O₃, 1 mol% Bi₂O₃, 0.5 mol% CoO, 0.5 mol% MnO, and 1 mol% TiO₂. A multi-layered ZnO varistor was modeled by bonding a single varistor with a composition in three layers according to the operating voltage. The thermal distribution of the triple-layered ZnO varistor was analyzed for the thermal runaway phenomenon that occurred during varistor operation using the finite element method according to Comsol 5.2.

• 한국자기학회지
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• 제11권6호
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• pp.256-261
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• 2001

Sr계 페라이트의 자기적 특성향상을 위하여 화학량론적 조성 SrFe$_{12}$O$_{19}$[SrM]에서 원소치환을 실시한 SrFe$_{11.7}$Zn$_{0.3}$O$_{19}$[Zn$_{0.3}$-SrM] 및 Sr$_{0.7}$La$_{0.3}$Fe$_{11.7}$Zn$_{0.3}$O$_{19}$[(La-Zn)$_{0.3}$-SrM] 화학조성으로 혼합한 후 공기 중 하소를 실시하여 하소분의 특성을 조사하였고, 소결조제로서 SiO$_2$, CaCO$_3$ 및 SrCO$_3$를 첨가하여 평균입도 0.80$\mu\textrm{m}$까지 습식 미분쇄를 행한 후, slurry 농도를 조절하여 외부자장 8 kOe을 인가하면서 disk 형태로 성형한 후 공기 중에서 소결하여 Sr 페라이트를 제조하여 소결 결정상태 및 자기적 특성을 조사하였다. Sr 페라이트 하소분의 자기특성은 화학량론적인 조성 SrFe$_{12}$)$_{19}$[SrM]에서 포화자화 (Ms/g)값이 61.06 emu/g에서 단독 Zn을 치환한 SrFe$_{11.7}$Zn$_{0.3}$O$_{19}$[Zn$_{0.3}$-SrM] 조성에서는 포화자화(Ms/g)값이 66.90 emu/g로 향상되었고, (La-Zn)$_{0.3}$-SrM 조성으로 원소치환을 실시한 하소분말을 사용하여 제조한 페라이트의 자기특성은 잔류자속밀도(B,) 4.21 kG, 최대에너지적(BH$_{max}$) 4.19 MGOe치 자기특성 값을 나타내었다.내었다.TEX> max/) 4.19 MGOe치 자기특성 값을 나타내었다.

• 한국분말재료학회지
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• 제12권6호
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• pp.399-405
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• 2005

Nanopowders of titanium dioxide $(TiO_2)$ incorporating the transition metal element(s) were synthesized by flame synthesis method. Single element among Fe(III), Cr(III), and Zn(II) was doped into the interior of $TiO_2$ crystal; bimetal doping of Fe and Zn was also made. The characteristics of transition-metal-doped $TiO_2$ nanopowders in the particle feature, crystallography and electronic structures were determined with various analytical tools. The chemical bond of Fe-O-Zn was confirmed to exist in the bimetal-doped $TiO_2$ nanopowders incorporating Fe-Zn. The transition element incorporated in the $TiO_2$ was attributed to affect both Ti 3d orbital and O 2p orbital by NEXAFS measurement. The bimetal-doped $TiO_2$ nanopowder showed light absorption over more wide wavelength range than the single-doped $TiO_2$ nanopowders.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.