• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.147-148
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• 2004

• 분석과학
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• 제5권3호
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• pp.327-332
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• 1992

Mn-Zn 페라이트 단결정 성장시 일반적인 Bridgman법에서 조성변동 문제가 발생한다. 상평형도를 이용하여 원료 조성을 A, B로 분리하여 조성 B 원료를 단결정 성장 속도와 동일하게 투입함으로써 조성변동 문제를 해결하였다. 실험변수를 바탕으로 A조성을 52 mol% $Fe_2O_3$, 30 mol% MnO, 18 mol% ZnO로 선정하였고, 원하는 단결정 조성인 B 조성을 53 mol% $Fe_2O_3$, 28.5 mol% MnO, 18.5 mol% ZnO로 선정하여 직경 60mm, 길이 300mm 단결정을 성장시켰다. 성장된 단결정은 조성 B 원료 정제가 투입된 30~270mm 부위에서 조성 변도 없이 균일하게 B 조성과 비슷한 조성을 가졌으며, 이에 따라 주파수 5 MHz에서의 투자율값도 균일하게 600 근처로 높게 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.463-463
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• 2013

This paper reports the synthesis and characterization of ZnO:Ga nano-structures deposited on Au/SiNx/Si(001) by radio-frequency sputtering. The effect of the temperature on the microstructure of the as-grown ZnO:Ga thin films was examined. The growth mode of ZnO:Ga nano-structures can be explained by the profile coating, i.e. the ZnO nano-structures were formed with a morphological replica of Au seeds. Initially, the ZnO:Ga nano-structures were overgrown on top of Au nano-crystals. Small ZnO:Ga nano-dots were then nucleated on hexagonal ZnO:Ga discs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.52-56
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• 2004

The movement of electron in the semiconductor-gap-semiconductor was observed by the variation of V-I characteristic as a distance two ZnO(1010) single crystals. When the resistance between two crystals was $10^2{\sim}10^4{\Omega}$, V-I characteristics had the pattern of the field emission or ohmic contact. On the other hand, when the resistance was larger than $10^7{\Omega}$ by increasing the distance between two crystals, the effect of surface barrier was prominent. This result leads to the conclusion that both the field emission (or ohmic contact) and the surface barrier effect including the tunneling have the influence on V-I characteristics of mechanically contacted crystals.

• 한국세라믹학회지
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• 제23권3호
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• pp.78-86
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• 1986

single crystals of various hexagonal ferrites were grown by a flux technique. For the growing experiment platinum crucibles of size 40 cc and a horizontal siliconit tube furnace were used. Charges consisted of the flux of BaO(SrO)/$B_2O_3$ and the composition of crystals in the system of BaO $(SrO)-Fe_2O_3-ZnO$. The BaO(SrO)/$B_2O_3$ molar ratio of the flux were varied from 1 to 3. Crystals up to 12.5mm in diameter were grown by slow cooling of melts from a maximum temperature of 1, 30$0^{\circ}C$or 1, 350$0^{\circ}C$ to 95$0^{\circ}C$ or 1, 00$0^{\circ}C$ The grown crystals exhibited a tabular hexagonal habits with very well developed ba-sal planes and narrow pyramidal faces of {1011} {1012} and {0001}. For the identification of the grown crystals X-ray diffraction studies were carried out. The effects of va-riations in flux ratio flux percentage and cooling rate on the quality of the grown crystals were studied. Cry-stal habits hillocks etch steps and growth spirals were observed by optical microscope. Magnetic properties of single crystals were measured.

• 한국결정성장학회지
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• 제19권1호
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• pp.11-14
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• 2009

Micro-pulling down(${\mu}-PD$)법을 이용하여 직경 2mm, 길이 $15{\sim}25\;mm$의 Zn와 Yb가 첨가된 near-stoichiometric 조성의 $LiNbO_3$ 단결정을 성장하였다. 일정 직경의 매끄럽고 결함이 없는 양질의 단결정임을 확인하였고, 결정 내 첨가된 Zn와 Yb의 조성이 고루 분포되었음을 알 수 있었다. Raman spectra를 통해 나타난 모든 peak은 $LiNbO_3$ power의 peak과 일치함을 알 수 있었고, 이를 통해 Hexagonal 구조의 $LiNbO_3$가 성장되었음을 확인할 수 있었다. Zn의 첨가량 증가에 따른 IR 영역의 투과도 비교를 통해 광손상을 억제에 효과가 있는 Zn 첨가의 역치량이 1 mol%임을 알 수 있었다.

• 한국분말재료학회지
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• 제23권4호
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• pp.270-275
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• 2016

We report on an all-solution-processed hydrothermal method to control the morphology of ZnO nanostructures on Si substrates from three-dimensional hemispherical structures to two-dimensional thin film layers, by controlling the seed layer and the molar contents of surfactants during their primary growth. The size and the density of the seed layer, which is composed of ZnO nanodots, change with variation in the solute concentration. The ZnO nanodots act as heterogeneous nucleation sites for the main ZnO nanostructures. When the seed layer concentration is increased, the ZnO nanostructures change from a hemispherical shape to a thin film structure, formed by densely packed ZnO hemispheres. In addition, the morphology of the ZnO layer is systematically controlled by using trisodium citrate, which acts as a surfactant to enhance the lateral growth of ZnO crystals rather than a preferential one-dimensional growth along the c-direction. X-ray diffraction and energy dispersive X-ray spectroscopy results reveal that the ZnO structure is wurtzite and did not incorporate any impurities from the surfactants used in this study.

• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 하계학술발표회
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• pp.264-265
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• 2005

• 한국표면공학회지
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• 제49권5호
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• pp.472-476
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• 2016

The nano-array of the vertically aligned rod-like particles grown on ZnO coated glass-substrates was obtained via hydrothermal process. ZnO thin film coatings were prepared on the glass substrates using a MOD (metallorganic deposition) dip-coating method with zinc chloride dihydrate as starting material and 2-ethylhexanol as solvent. ZnO nanorods were synthesized on the seeded substrates by hydrothermal method at $80^{\circ}C$ using zinc-nitrate hexahydrate as a Zn source and sodium hydroxide as a mineralizer. Under the hydrothermal condition, the rod-like nanocrystals were easily attaching on the already ZnO seeded (coated) glass surface. It has been shown that the hydrothermal synthesis parameters are key factors in the nucleation and growth of ZnO crystallites. By controlling of hydrothermal parameters, the ZnO particulate morphology could be easily tailored. Rod-shaped ZnO arrays on the glass substrates consisted of elongated crystals having 6-fold symmetry were predominantly developed at high Zn precursor concentration in the pH range 7~11.

• Progress in Superconductivity
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• 제4권1호
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.