• 한국결정성장학회지
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• 제29권6호
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• pp.251-256
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• 2019

ZnO를 통상적인 소결온도 이상의 온도 1385℃에서 소결하는 과정에서 mm 크기로 거대 성장된 입자를 갖는 세라믹스를 제조하였다. 1400℃에서 8시간 소결하는 경우 성장에 참여하지 않은 입자의 크기는 30~40 ㎛이고 거대 성장된 입자는 1,000 ㎛에 달하여 부피비 최소 10,000배 이상의 급속한 성장이 이루어졌다. 이러한 급속한 성장의 원인으로 일차 입자 크기분포, 성형압 불균일 또는 불순물의 합입등을 고려하였으며, 이들 중 일차입자 크기 분포일 것으로 추정되나 확실한 증거를 확보하지 못하였다. 미세구조 관찰을 통해 거대입자 성장은 주변의 입자를 통째로 합치는 과정을 통해 성장하는 것으로 추정된다.

• 전기학회논문지
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• 제65권10호
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• pp.1697-1701
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• 2016

The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• 한국세라믹학회지
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• 제32권12호
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• pp.1323-1330
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• 1995

The effects of various additives on the microstructures of sintered ZnO varistors were examined. Bi2O3, Sb2O3 and Cr2O3 were added to ZnO step by step to identify the effect of each component. The specimens were prepared by sintering at 110$0^{\circ}C$ and 120$0^{\circ}C$ in ambient atmosphere. In ZnO-Bi2O3-Sb2O3 ternary system, decrease of averge grain size due to antimony oxide addition depends on sintering temperature as well as Bi2O3 content. When Sb2O3 was partly or completely replaced by Cr2O3, grain size was further reduced. A significant amount of pyrochlore phase which was not transformed to spinel and Bi2O3-rich liquid phase seemed to remain during sintering at 110$0^{\circ}C$. Unlike ZnO-Bi2O3-Sb2O3 system, the $\alpha$-spinel phase containing significant amount of Cr did not transform to pyrochlore during furnace cooling. Fine spinel particles around 1${\mu}{\textrm}{m}$ size were ovserved within ZnO grains and grain boundaries, which were believed to be responsible for grain-growth inhibition in ZnO-Bi2O3-Sb2O3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.221-223
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• 1995

The electrical conductivity of SnO$_2$added ZnO was investigated using the DC and AC methods. The electrical conductivity of SnO$_2$added ZnO was decreased with increasing the concentration of SnO$_2$. The cal쳐lated effective dielectric constants of 3 mol%, 5 mo1%, and 7 mol% are ~7, ~13, and ~120, respectively. The factor of the decrease for the electrical conductivity seems to be the increase of the resistance of grain decreasing the size of grain.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
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• pp.43-46
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• 2001

The ZnO devices using semiconductor properties, to include $MnO_2$, $Y_2O_3$ and other material, was fabricated by $Sb_2O_3$ mol ratio from 1 to 4 [mol%]. The non-linearity factor was calculated by setting current to be $1[mA/cm^2]$ and $10[mA/cm^2]$. The spinel structure was fonned by $Sb_2O_3$ addition and it was depressed the ZnO grain formation. The grain growing was controlled by spinel structure that has improved the non-linearity factors. The breakdown voltage characteristics of semiconductor devices to increase with $Sb_2O_3$ was increased in voltage-current. The non-linearity value of ZnO semiconductor devices was 45 over.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.962-968
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• 2011

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.214-220
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• 1998

ZnO varistors are characterized by the features of excellent nonlinearity and surge withstand capability. In this paper, in order to investigate the use of ZnO varistor as surge absorption device in low voltage, metal oxide material($TiO_2$) was selected as control material of grain growth. Samples of ZnO varistors were fabricated with varying the contents, and then the microstructures and V-I characteristics were measured. It was observed by SEM that the mean grain size increased with the increase of the additive. From the measurement of V-I characteristics, it was observed that according to the increase of the quantity of $TiO_2$ as additive, the operating voltage was lowered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.185-189
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• 2000

ZnO varistor has many merits as compared with SiC varistor. But, because of leakage current and non-linear coefficient, it has unstable function properties. For the purpose of improvement of ZnO varistor properties, ZnO varistor is studied according to sintering condition and mixing condition. ZnO varistor, $ZnO-Bi_2O_2-Y_2O_3-MnO-Cr_2O_3-Sb_2O_3$ series, is fabricated with $Sb_2O_3$ mol ratio(0.5-4[mol%]) and sintered at $1250[^{\circ}C]$ In accordance with $Sb_2O_3$ mol ratio and sintering temperature, grain size and non-linear coefficient are measured. The specimen, $Sb_2O_3$ mol ratio is 1[mol%], has small grain size. It has best properties because of its liquid phase shape. When $Sb_2O_3$ mol ratio is 1[mol%], grain size is decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.98-101
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• 1997

The nonuniformity of electrical characteristics of grain boundaries in ZnO varistors wei\ulcorner systematically analyzed. The high nonuniformity exist in barrier voltages and nonlinearity coefficients among different grain boundaries. The barrier voltages have normal distributions, only a few grain boundaries were electrically active, and the grain boundaries can be simply classified into good, bad, and ohmic ones according to the electrical characteristics of grain boundaries. The average barrier voltage is equal to 3.3 V by direct method, but it is only 2.3 V by indirect method. There is a high difference between the barrier voltages by direct and indirect measurement methods. The A1$_2$O$_3$ dopants affect the electrical characteristics of grain boundaries by changing the electron status In grain boundary and intragrain.