• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.284-289
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• 2014

The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

• 한국재료학회지
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• 제13권8호
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• pp.531-536
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• 2003

The electromagnetic properties and microstructures of the ferrites based on ($Ni_{0.2}$ $Cu_{0.2}$ $Zn_{0.6}$)$_{1.085}$($Fe_2$$O_3$)$_{0.915}$ were investigated by changing the amount of additive SnO$_2$and CaO and the sintering temperatures. Addition of $SnO_2$caused pores in the specimen. There was no variation of grain size by changing the amount of additives. Total loss was reduced when ($Ni_{0.2} $Cu_{0.2}$ $Zn_{ 0.6}$)$_{1.085}$ ($Fe_2$$O_3$)$_{0.915}$ composition was sintered at $1150^{\circ}C$ rather than $1300^{\circ}C$. Addition of CaO was useful to reduce the total loss because it increased the sintering density. The lowest total loss was obtained when 0.06 wt% $SnO_2$and 0.4 wt% CaO were added at the same time.

• Journal of Advanced Marine Engineering and Technology
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• 제40권8호
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• pp.692-697
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• 2016

This study investigated the effect of surface roughness of zinc oxide (ZnO) layer on the growth of polycrystalline Si layer via an Al-induced layer exchange process. It was found that the growth rate, grain size, crystallization fraction, and preferential orientation of the polycrystalline Si layer were strongly influenced by the surface roughness of the underlying ZnO layer. As the roughness of the ZnO surface increased, a higher growth rate (~40 min) and preferential Si (100) orientation were obtained because of the spatial concentration fluctuations in the Al-Si alloy, induced by the surface roughness of the underlying ZnO layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.75-81
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• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.214-215
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• 2008

Zinc-oxide(ZnO) films were deposited on PC(polycarboanate) and PES(polyethersulphone) substrates by using RF(radio-frequency)sputter with various rf sputtering Power at a room temperature. The effects of rf sputtering Power on the structural and optical properties of ZnO films were investigated by using atomic force microscopy, X-ray diffraction, and UV spectrophotometer. The most excellent structural and properties of a ZnO film are obtained in the condition of an rf-power of 150 W. This film shows larger Grain size and lower surface roughness and a higher optical transmittance of over 80 % in the visible range than other films deposited in the different conditions of rf- power. Regardless of substrate types, The presence of a strong diffraction peak indicates that films have a (0 0 2) preferred orientation associated with the hexagonal phase.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.718-726
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• 1998

J-E 특성 AC 임피더스 분석 그리고 주파수- 전도 특성들을 실험하여 임펄스 전류 서지가 ZnO 바리스터의 열화(degradation)에 미치는 영향을 고찰하였다. ZnO 바리스터 시편에 임펄스 전류(300A/$cm^24, 8/50$\mu s$)를 인가시킨 결과, 입계(grain boundary) 특성을 나타내는 비선형계수 $\alpha$와 E\ulcorner\ulcorner의 값은 크게 감소하였으나, 입자 특성을 나타내는 E_{100A}, E_{300A}$ 값에서는 큰 변화가 없었다. 이러한 열화 현상은 입계의 위치한 부성 전하 밀도, $N_s$의 감소에 한 쇼트키 장벽의 변화에 기인한 것으로 나타났다. 임펄스 서지에 의해 열화된 ZnO 바리스터는 AC 임피더스 분석에서 현저한 non-Debye 특성을 보이며, 이는 병렬 RC 네트워크로 모델링한 Cole-Cole 완화 관계식으로 입계의 열화 특성을 잘 설명할 수 있었다. 주파수-전도도 관계를 검토한 결과 Zno 바리스터는 호핑 전도(hopping conduction),\$sigma(\omega)\varpropto\omega^{\eta}$ 특성을 나타내면, 임펄스 서지가 인가된 이후 n 값이 감소하였다. 이는 임펄스 서지에 의해 입RP 결합 상태(defect states)가 호핑 전도가 발생하기 쉽고 다중(multiple)호핑에 의한 전도 메커니즘을 갖는 것으로 고찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.73-79
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• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

• 열처리공학회지
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• 제32권2호
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• pp.74-78
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• 2019

$Zn_2SnO_4$ thin films were deposited on quartzs substrates by using radio-frequency magnetron sputtering system. Thermal treatments at various temperatures were performed to evaluate the effect of annealing temperatures on the properties of $Zn_2SnO_4$ thin films. Surface morphologies were examined by using field emission-scanning electron microscopy and showed that sizes of grains were slightly increased and grain boundaries were clear with increasing annealing temperatures. The deposited $Zn_2SnO_4$ thin films on quartzs substrates were amorphous structures and no distinguishable crystallographic changes were observed with variations of annealing temperatures. The optical transmittance was improved with increasing annealing temperatures and was over 90% in the wavelength region between 350 and 1100 nm at the annealing temperature of $600^{\circ}C$. The optical energy bandgaps, which derived from the absorbance of $Zn_2SnO_4$ thin films, were increased from 3.34 eV to 3.43 eV at the annealing temperatures of $450^{\circ}C$ and $600^{\circ}C$, respectively. As the annealing temperature was increased, the electron concentrations were decreased. The electron mobility was decreased and resistivity was increased with increasing annealing temperatures with exception of $450^{\circ}C$. These results indicate that heat treatments at higher annealing temperatures improve the optical and electrical properties of rf-sputtered $Zn_2SnO_4$ thin films.

• 한국재료학회지
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• 제15권8호
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.