• Electronic Materials Letters
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• v.14 no.6
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• pp.669-677
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• 2018

In this work, the high ${\kappa}$ $Zr_xAl_{1-x}O_y$ films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of $Zr_xAl_{1-x}O_y$ films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of $Zr_xAl_{1-x}O_y$ gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with $Zr_xAl_{1-x}O_y$ film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the $ZTO/Zr_xAl_{1-x}O_y$ interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.

• Korean Journal of Materials Research
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• v.22 no.5
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• pp.237-242
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• 2012

We report on the NO gas sensing properties of Al-doped zinc oxide-carbon nanotube (ZnO-CNT) wire-like layered composites fabricated by coaxially coating Al-doped ZnO thin films on randomly oriented single-walled carbon nanotubes. We were able to wrap thin ZnO layers around the CNTs using the pulsed laser deposition method, forming wire-like nanostructures of ZnO-CNT. Microstructural observations revealed an ultrathin wire-like structure with a diameter of several tens of nm. Gas sensors based on ZnO-CNT wire-like layered composites were found to exhibit a novel sensing capability that originated from the genuine characteristics of the composites. Specifically, it was observed by measured gas sensing characteristics that the gas sensors based on ZnO-CNT layered composites showed a very high sensitivity of above 1,500% for NO gas in dry air at an optimal operating temperature of $200^{\circ}C$; the sensors also showed a low NO gas detection limit at a sub-ppm level in dry air. The enhanced gas sensing properties of the ZnO-CNT wire-like layered composites are ascribed to a catalytic effect of Al elements on the surface reaction and an increase in the effective surface reaction area of the active ZnO layer due to the coating of CNT templates with a higher surface-to-volume ratio structure. These results suggest that ZnO-CNT composites made of ultrathin Al-doped ZnO layers uniformly coated around carbon nanotubes can be promising materials for use in practical high-performance NO gas sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.452-452
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• 2013

ZnO is one of the most attractive transparent conductive oxide (TCO) films because of low toxicity, a wide band gap material and relatively low cost. However, the electrical conductivity of un-doped ZnO is too high to use it as TCO films in practical application. To improve electrical properties of undoped ZnO, transition metal (TM) doped ZnO films such as Al doped ZnO or Ti doped ZnO have been extensively studied. Here, we prepared Ti doped ZnO thin films by atomic layer deposition (ALD) for the application of TCO films. ALD was used to prepare Ti-doped ZnO thin films due to its inherent merits such as large area uniformity, precise composition control in multicomponent thin films, and digital thickness controllability. Also, we demonstrated that ALD method can be utilized for fabricating highly ordered freestanding nanostructures of Ti-doped ZnO thin films by combining with BCP templates, which can potentially used in the photovoltaic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.222-222
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• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.469-475
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• 2013

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlled the uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films, AZO films using ALD was controlled to be three different thicknesses (50 nm, 100 nm, and 150 nm). The structural, chemical, electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Vis spectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased, and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The average surface roughnesses of the samples using atomic force microscopy were ~3.01 nm, ~2.89 nm, and ~2.44 nm, respectively. As the thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and optical properties of AZO thin films. Therefore, the thickest AZO thin films with 150 nm exhibited excellent resistivity (${\sim}7.00{\times}10^{-4}{\Omega}{\cdot}cm$), high transmittance (~83.2 %), and the best FOM ($5.71{\times}10^{-3}{\Omega}^{-1}$). AZO thin films fabricated using ALD may be used as a promising cadidate of TCO materials for optoelectronic applications.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.660-667
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• 1997

AI-Mg-합금의 용융산화에 의해 생성되는 AlO$_{2}$O$_{3}$-복합재료의 미세구조에 미치는 합금원소의 영향을 연구하였다. AI-1Mg 합금과 AI-3Mg 합금을 기본으로하여 Si, Zn, Sn, Cu, Ni, Ca, Ce를 1, 3, 5 %를 무게비로 첨가하였다. 각 합금을 1473K에서 20시간 유지하여 산화시킨 후 산화층의 거시적 형상과 미세구조를 광학현미경으로 관찰하였다. 각 미세구조의 상분율을 상분석기로 측정하였다. 산화층의 최첨단면은 SEM과 EDX로 관찰하고 분석하였다. Cu나 Ni를 첨가한 합금으로부터 성장한 산화층의 미세구조가 가장 치밀하였다. Zn이 포함된 합금으로부터 성장한 산화층 최첨단 성장면에는 ZnO가 관찰되었다. Zn이 포함되지 않은 다른 합금의 성장 전면에는 항상 MgAi$_{2}$O$_{4}$상이 관찰되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.432-436
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• 2017

IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.483-490
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• 1997

Al2O3/metal composites were fabricated by oxidation and reaction of molten Al-alloy into two types of commercial Al2O3-SiO2 fibrous insulation board. The growth rate, composition and microstructure of these materials were described. An AlZnMg(7075) alloy was selected as a parent alloy. Mixed polycrystalline fiber and glass phase fiber were used as a filler. The growth surface of an alloy was covered with and without SiO2. SiO2 powder was employed as a surface dopant to aid initial oxidation of Al-alloy. Al-alloy, SiO2, fiber block and growth inhibitor CaSiO3 were packed sequentially in a alumina crucible and oxidized in air at temperature range 90$0^{\circ}C$ to 120$0^{\circ}C$. The growth rate of composite layer was calculated by measuring the mass increasement(g) per unit surface($\textrm{cm}^2$). XRD and optical microscope were used to investigate the composition and phase of composites. The composite grown at 120$0^{\circ}C$ and with SiO2 dopant showed rapid growth rate. The growth behavior differed a little depending on the types of fiber used. The composites consist of $\alpha$-Al2O3, Al, Si and pore. The composite grown at 100$0^{\circ}C$ exhibited better microstructure compared to that grown at 120$0^{\circ}C$.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1124-1127
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• 2002

In this paper, we studied the effects of the electron reflection on shadow mask on which the electron reflecting materials with $WO_3-ZnS:Cu.Al-PbO-SiO_2$ system were screen-printed and we evaluated the variation of the electron beam mislanding in CRT. As a result, the green emitted spectra on the electron reflecting layer are observed due to the transformation of the electron energy, when the electron impacted on shadow mask. The beam mislanding is reduced about 40% in comperision with that of CRT made by the conventional method.