• Korean Journal of Optics and Photonics
• /
• v.12 no.5
• /
• pp.394-400
• /
• 2001

We studied thermal diffusion properties diffusion properties of multi-layered Ge-Sb-Te alloy thin films for optical recording media by solving the thermal equation. Based on the numerical analysis of optical energy distribution and absorption inside multi-layered films including temperature gradient and heat transfer simultaneously, we proposed the optimum parameters of the input laser power and the multi-layer structure as follow. i) Input laser power is 18 mW, ii) laser exposure time is 60 ns, iii) the thicknesses of the lower and the upper ZnS-SiO$_2$are 140 nm and 20~30 nm respectively, and iv) thickness of Ge-Sb-Te recording film is 20 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.319-320
• /
• 2006

In order to improve the ESD(Electrical Static Discharge) resistance of multilayer chip varistors, we have investigated ZnO-$Pr_6O_{11}$ based chip varistor by applying tape casting technology, whose fundamental component were ZnO : $Pr_6O_{11}$ :$Co_3O_4$: $Y_2O_3$: $Al_2O_3$=93.67: 2.53:2.53:1.25 : 0.015 (wt %). The effect of sintering condition on the multilayer chip varistors and electric properties was studied. The electrical properties and ESD resistance of multilayer chip varistor could be influenced the sintering temperature and condition.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.6 no.2
• /
• pp.315-322
• /
• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.2
• /
• pp.27-31
• /
• 2017

AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1471-1472
• /
• 2011

최근 경재적인 한계를 드러내고 있는 실리콘 태양전지의 대안으로 주목받고 있는 염료감응형 태양전지는 식물의 광합성 원리에 기초하여 빛이 입사하면 염료 분자가 포톤을 흡수해 여기하면서 전자를 방출함으로써 기전력을 발생시키는 원리로 동작한다. 염료에서 발생된 전자는 $TiO_2$의 conduction band로 주입되어 확산을 통해 TCO 기판으로 이동한다. 이때 다공성 나노구조의 $TiO_2$ 표면과 전해질의 접촉이 발생하게 되고 이로 인해 $TiO_2$ conduction band의 전자와 전해질의 $I_3{^-}$ 간의 재결합이 발생하게 되는데 이것은 DSC의 기능을 저하시키는 요인 중의 하나이다. 이러한 문제점은 $Al_2O_3$, ZnO, MgO, $BaTiO_2$ 등의 표면처리에 의한 core-shell 나노구조를 형성함으로써 해결할 수 있다. 본 연구에서는 aluminum isopropoxidee와 magnesium chloride 혼합 용액을 사용하여 core-shell 나노구조를 형성하여 셀을 제작하고, 완성된 셀의 출력특성과 내부 임피던스의 변화를 측정, 분석함으로써 단일 용액을 사용하였을 때에 비해 효과적인 재결합 감소와 광전압의 상승효과를 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.193-196
• /
• 1999

Organic electroluminescent devices have attracted a great deal of attention due to thier potential application to full-color flat-panel displays. The 8-hydroxyquinollne Zinc(Znq$_2$) were synthesized successfully from zinc chloride(ZnCl$_2$) and zinc acetate(Zn(C$_2$H$_3$O$_3$)$_2$) as green omitting material. A double-layer ELD consist of an emitting layer of B-hydroxyquinoline Zinc(Znq$_2$) and a hole-transport layer of tai-phenylene diamine(TPD) derivatives sandwiched between an Aluminium(Al) and Indium-Tin-Oxide(ITO) electrodes omitted green light resulting from Znq$_2$. The electroluminescent devices (ELD) exhibited a maximum luminance of 1000cd/$\textrm{cm}^2$ at a driving voltage of 8V and a driving current density of 0.4mA/$\textrm{cm}^2$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.341-341
• /
• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.160-160
• /
• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.466-468
• /
• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Corrosion Science and Technology
• /
• v.9 no.6
• /
• pp.259-264
• /
• 2010

In continuous hot dip galvanizing process, oxide formation on steel surface has an influence on Zn wetting. High strength automotive steel contains high amount of Si and Mn, where Si-Mn composite oxides such as $Mn_2SiO_4$ or $MnSiO_3$ covers the surface after annealing. Zn wetting depends on how the aluminothermia reaction can reduce the Mn-Si composite oxides and then form inhibition layer such as $Fe_2Al_5$ on the steel surface. The outward diffusion of metallic ions such as $Mn^{2+}$, $Si^{2+}$ in the steel matrix is very important factor for the formation of the surface oxides on the steel surface. The surface state and grain boundaries provide an important role for the diffusion and the surface oxide reactions. Some elements such as P, Sb, and B have a strong affinity for the interface precipitation, and it influence the diffusivity of metallic ions on grain boundaries. B oxide forms very rapildly on the steel surface during the annealing, and this promote complex oxides with $SiO_2$ or MnO. P has inter-reacted with other elements on the grain boundaries and influence the diffusion through on them. Small addition of Sb could suppress the decarburization from steel surface and retards the formation of internal and external selective oxides on the steel surface. Interface control by the trace elements such as Sb could be available to improve the Zn wettability during the hot dip galvanizing.