• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.597-601
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• 2002

In this study, the structural, dielectric and piezoelectric properties of $Pb[(Ni_{1/3}Nb_{2/3})_x-(Mn_{1/3}Nb_{2/3})_{0.09-x}-(Zn_{0.505}Ti_{0.495)_0.91]O_3$ (x=0, 0.01, 0.02, 0.03, 0.04, 0.05) system ceramics were investigated to develop the composition ceramics for piezoelectric transformer. All the specimens were sintered at $1250^{\circ}C$ and its physical properties were measured, and the results are as follows : With increasing PNN substitution for PMN-PZT system, dielectric constant was increased and electro-mechanical coupling factor($k_p$) was increased to 0.62 at 5 mol% while mechanical quality factor(Qm) was decreased.

• 전자공학회논문지A
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• 제31A권5호
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• pp.101-105
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• 1994

The EL lamp have been fabricated by screen printing method. the thickness of BaTiO$_3$ dielectric layer and ZnS:Cu phosphor layer was 20 $\mu$m and 40 $\mu$m, respectively. The threshold voltage of green El lamp was 50 $V_{p-p}$ and the maximum brightness was 13.5 $\mu$ W/cm$^2$ at frequency of 700 Hz and the input voltage of 250 $V_{p-p}$. Also when the Rodamin G6 of 0.02 g was doped, the threshold voltage of white EL lamp was 70 $V_{p-p}$ and the maximum brightness was 34 $\mu$W/cm$^2$.

• Transactions on Electrical and Electronic Materials
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• 제18권3호
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• pp.141-143
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• 2017

Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국산업보건학회지
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• 제24권4호
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• pp.547-555
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• 2014

Objective: This study was conducted to investigate the association between subjective distress symptoms and argon welding among workers in Gyeongnam Province shipyard. Method: 31 argon and 29 non-argon welding workers were selected as study subjects in order to measure concentrations of personal dust, welding fumes and other hazardous materials such as ZnO, Pb, Cr, FeO, MnO, Cu, Ni, $TiO_2$, MgO, NO, $NO_2$, $O_3$, $O_2$, $CO_2$, CO and Ar. An interviewer-administered questionnaire survey was also performed on the same subjects. The items queried were as follows: age, height, weight, working duration, welding time, welding rod amounts used, drinking, smoking, and rate of subjective distress symptoms including headache and other symptoms such as fever, vomiting and nausea, metal fume fever, dizziness, tingling sensations, difficulty in breathing, memory loss, sleep disorders, emotional disturbance, hearing loss, hand tremors, visual impairment, neural abnormality, allergic reaction, runny nose and stuffiness, rhinitis, and suffocation. Statistical analysis was performed using SPSS software, version 18. Data are expressed as the mean ${\pm}SD$. An ${\chi}^2$-test and a normality test using a Shapiro wilk test were performed for the above variables. Logistic regression analysis was also conducted to identify the factors that affect the total score for subjective distress symptoms. Result: An association was shown between welding type (argon or non-argon welding) and the total score for subjective distress symptoms. Among the rate of complaining of subjective distress symptoms, vomiting and nausea, difficulty breathing, and allergic reactions were all significantly higher in the argon welding group. Only the concentration of dust and welding fumes was shown to be distributed normally after natural log transformation. According to logistic regression analysis, the correlations of working duration and welding type (argon or non-argon) between the total score of subjective distress symptoms were found to be statistically significant (p=0.041, p=0.049, respectively). Conclusion: Our results suggest that argon welding could cause subjective distress symptoms in shipyard workers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1255-1257
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• 1998

In this study,$ 5{\times}5$ dot-matrix display was implemented with powder electroluminescent device (PELD). Generally PELD which have a luminance from powder phosphor with electric field, inserted phosphor and dielectric layer between electrodes is basic structure. To make high brightness PELD compared to conventional device, new type of PELD was proposed as follows. New PELD had only one layer, which was mixed phosphor (ZnS:Cu) and dielectric (BaTiO3) material appropriately between electrodes. To compare and estimate the conventional and new type of PELD, the EL spectrum, transferred charge density, brightness and decay time was measured. As above result, we fabricated a hish brightness $ 5{\times}5$ dot-matrix display with new type of PELD. Its brightness was 6400 $cd/m^2$ at 200 V, 400Hz.

• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.1-4
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• 2006

White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.181-184
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• 2017

Multilayer ceramics in which piezoelectric layers of $0.90Pb(Zr_{0.48}Ti_{0.52})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.05Pb(Zn_{1/3}Nb_{2/3})O_3$ (0.90PZT-0.05PMS-0.05PZN) stack alternately with silver electrode layers were prepared by an advanced low-temperature co-fired ceramic (LTCC) method. The electrical properties and bonding strength of the multilayers were associated with the interface morphologies between the piezoelectric and silver-electrode layers. Usually, the inner silver electrodes are fabricated by sintering silver paste in multi-layer stacks. To improve the interface bonding strength, piezoelectric powders of 0.90PZT-0.05PMS-0.05PZN with an average particle size of $23{\mu}m$ were added to silver paste to form a gradient interface. SEM observation indicated clear interfaces in multilayer ceramics without powder addition. With the increase of piezoelectric powder addition in the silver paste, gradient interfaces were successfully obtained. The multilayer ceramics with gradient interfaces present greater bonding strength as well as excellent piezoelectric properties for 30~40 wt% of added powder. On the other hand, over addition greatly increased the resistance of the inner silver electrodes, leading to a piezoelectric behavior like that of bulk ceramics in multilayers.

• Bulletin of the Korean Chemical Society
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• 제31권10호
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• pp.2923-2928
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• 2010

This study examined the synthesis of the crystal structure of bis(2,2'-bipyridine)nitrato zinc (II) nitrate, $[Zn(bipy)_2(NO_3)]^+NO_3^-$ using a microwave treatment at 300 W and 60 Hz for the application to dye-sensitized solar cells. The simulated complex structure of the complex was optimized with the density functional theory calculations for the UV-vis spectrum of the ground state using Gaussian 03 at the B3LYP/LANL2DZ level. The structure of the acquired complex was expected a penta-coordination with four nitrogen atoms of bipyridine and the oxygen bond of the $NO_3^-$ ion. The reflectance UV-vis absorption spectra exhibited two absorptions (L-L transfers) that were assigned to the transfers from the ligand ($\sigma$, $\pi$) of $NO_3$ to the ligand ($\sigma^*$, $\pi^*$) of pyridine at around 200 - 350 nm, and from the non-bonding orbital (n) of O in $NO_3$ to the p-orbital of pyridine at around 450 - 550 nm, respectively. The photoelectric efficiency was approximately 0.397% in the dye-sensitized solar cells with the nanometer-sized $TiO_2$ at an open-circuit voltage (Voc) of 0.39 V, a short-circuit current density (Jsc) of $1.79\;mA/cm^2$, and an incident light intensity of $100\;mW/cm^2$.

• 광물과 암석
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• 제34권1호
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• pp.1-14
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• 2021

운산 금 광상은 한반도의 3대(대유동 광상, 광양 광상) 금 광상중의 하나였다. 이 광상의 지질은 선캠브리아기의 변성퇴적암류와 중생대의 반상화강암으로 구성된다. 이 광상은 선캠브리아기의 변성퇴적암류와 중생대의 반상화강암내에 발달된 단층대를 따라 충진한 함 금 석영맥 광상으로 조산형 금 광상에 해당된다. 이 광상의 석영맥은 광물조합에 따라 1) 방연석-석영맥형, 2) 자류철석-석영맥형, 3) 황철석-석영맥형, 4) 페크마틱 석영맥형, 5) 백운모-석영맥형 및 6) 단순석영맥형으로 분류된다. 연구된 석영맥은 황철석-석영맥형이며 견운모화작용, 녹니석화작용 및 규화작용이 관찰된다. 백색운모는 유색대에서 백색석영, 황철석, 녹니석, 금홍석, 모나자이트, 저어콘, 인회석, 칼리장석 및 방해석 등과 함께 세립질 내지 중립질 입단으로 산출된다. 이 백색운모의 화학조성은 (K0.98-0.86Na0.02-0.00Ca0.01-0.00Ba0.01-0.00 Sr0.00)1.00-0.88(Al1.70-1.57Mg0.22-0.09Fe0.23-0.10Mn0.00Ti0.04-0.02Cr0.01-0.00V0.00Ni0.00)2.06-1.95 (Si3.38-3.17Al0.83-0.62)4.00O10(OH2.00-1.91F0.09-0.00)2.00로써 이론적인 이중팔면체형 운모류 값보다 Si가 높고 K, Na, Ca는 낮다. 이 광상의 엽리상 석영맥에서 산출되는 백색운모의 화학조성 변화는 팬자이틱(phengitic) 또는 Tschermark 치환[(Al3+)VI+(Al3+)IV <-> (Fe2+ 또는 Mg2+)VI+(Si4+)IV] 및 직접적인 (Fe3+)VI <-> (Al3+)VI 치환에 의해 일어났음을 알 수 있다. 엽리상 석영맥에서 산출되는 녹니석의 화학조성은 (Mg1.11-0.80Fe3.69-3.14Mn0.01-0.00Zn0.01-0.00K0.07-0.01Na0.01-0.00Ca0.04-0.01Al1.66-1.09)5.75-5.69 (Si3.49-2.96Al1.04-0.51)4.00O10 (OH)8로써 이론적인 녹니석보다 Si 함량이 높다. 이 녹니석의 화학조성 변화는 팬자이틱(phengitic) 또는 Tschermark 치환(Al3+,VI+Al3+,IV <-> (Fe2+ 또는 Mg2+)VI+(Si4+)IV) 및 팔면체적 Fe2+ <-> Mg2+ (Mn2+) 치환에 의해 일어났음을 알 수 있다. 따라서 운산 광상의 엽리상 석영맥 및 변질광물은 조산운동 시 연성전단(ductile shear) 시기에 형성되었음을 알 수 있다.