• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
• /
• pp.179-180
• /
• 2012

Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

• 반도체디스플레이기술학회지
• /
• 제15권3호
• /
• pp.30-34
• /
• 2016

We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under $10^{-4}[{\Omega}{\cdot}cm]$ and a transmittance of more than 85 % in the visible range.

• 한국재료학회지
• /
• 제20권12호
• /
• pp.629-635
• /
• 2010

Abstract In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional RF sputtering process with the same working pressure. To generate additional magnetic flux and increase sputtering speed, electromagnetic coil is mounted at the back side of target. Under unbalanced magnetic flux from electromagnet with 1.5A coil current, deposition speed of AZO thin film is increased from 3 nm/min to 4.4 nm/min. This new value originates from the decline of particles near target surface due to the local magnetic flux going toward substrate from electromagnet. AZO film sputtered by HIPIMS process shows very smooth and dense film surface for which surface roughness is measured from 0.4 nm to 1 nm. There are no voids or defects in morphology of AZO films with varying of magnetic field. When coil current is increased from 0A to 1A, transmittance of AZO thin film decreases from 80% to 77%. Specific resistance is measured at about $2.9{\times}10-2\Omega{\cdot}cm$. AZO film shows C-axis oriented structure and its grain size is calculated at about 5.3 nm, which is lower than grain size in conventional sputtering.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제37회 하계학술대회 초록집
• /
• pp.188-188
• /
• 2009

• 한국표면공학회지
• /
• 제47권2호
• /
• pp.81-85
• /
• 2014

Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and $300^{\circ}C$ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at $300^{\circ}C$ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of $9.8{\times}10^{-4}{\Omega}cm$ was observed in the films annealed at $300^{\circ}C$. Due to the increased carrier mobility, 2.35 $cm^2V^{-1}S^{-1}$ of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.

• 공업화학
• /
• 제28권1호
• /
• pp.1-7
• /
• 2017

폴리디메틸실록산(PDMS)은 화학적 증기 증착 방법을 통해 다양한 물질에 5 nm 두께 이하의 박막 형태로 증착될 수 있다. $SiO_2$, $TiO_2$, ZnO, C, Ni 및 NiO와 같은 다양한 종류의 나노입자 표면에도 PDMS 박막은 증기 증착을 통해 고르게 형성될 수 있으며, PDMS가 증착된 표면은 완벽한 소수성을 갖게 된다. 이 소수성 박막은 안정성이 높아 산, 염기 및 자외선 노출 시에도 잘 분해되지 않으며, 또한 PDMS로 코팅된 나노입자는 다양한 환경 분야에 응용될 수 있다. PDMS 코팅된 소수성 $SiO_2$ 입자는 기름/물 혼합액에서 기름과 선택적으로 반응하고, 기름 유출 사고 시 유류 확산을 억제할 수 있으며, 유출된 기름을 물에서 물리적으로 쉽게 분리할 수 있게 해준다. PDMS 코팅된 $TiO_2$를 진공 상태에서 열처리 할 경우 $TiO_2$ 표면은 완전하게 친수성으로 개질되며, 이때 $TiO_2$가 가시광선을 흡수하여 반응할 수 있게 하는 산소 빈자리 또한 발생하게 된다. PDMS 코팅 후 열처리한 $TiO_2$는 아무 처리하지 않은 $TiO_2$에 비해 가시광 하에서 수중의 유기 염료를 분해하는데 더 뛰어난 광촉매 활성을 보인다. 우리는 해당 연구에서 제시하는 간단한 PDMS 박막 코팅 방법이 다양한 환경 과학 및 공학 분야에서 응용될 수 있음을 소개하고자 한다.

• Corrosion Science and Technology
• /
• 제12권6호
• /
• pp.295-303
• /
• 2013

Silane surface treatments have been developed as an alternative for toxic and carcinogenic chromate-based treatments for years. It is consistently observed that ultra-thin films offer excellent corrosion protection as well as paint adhesion to metals. The silane performance is comparable to, or in some cases better than, that of chromate layers. Based on the tetra-ethylorthosilicate(TEOS) and methlyl trieethoxysilane(MTES), inorganic sol was synthesized and formed hybrid networks with $SiO_2$ nano particle and polypropylene glycol(PPG) on Zn alloyed steel surface. According to SST results, addition of 10nm and 50nm $SiO_2$ nanoparticle in synthesized solution improved anti-corrosion property by its shear stress relaxation effect during curing process. Also, SST results were shown that anti-corrosive property was affected by the amounts of organic compounds.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.426-426
• /
• 2012

The CIGS absorber has outstanding advantages in the absorption coefficient and conversation efficiency. The CIGS thin film solar cells have been researched for commercialization and increasing the conversion efficiency. CIG precursors were deposited on the Mo coated glass substrate by magnetron sputtering with multilayer structure, which is CuIn/CuGa/CuIn/CuGa. Then, the metallic precursors were selenized under high Se pressure by RTP method which included. Se vapor was supplied using Se cracker cell instead of toxic hydrogen selenide gas. Se beam flux was controlled by variable reservoir zone (R-zone) temperature during selenization process. Cracked Se source reacted with CIG precursors in a small quantity of Se because of small size molecules with high activation energy. The CIGS thin films were studied by FESEM, EDX, and XRD. The CIGS solar cell was also developed by layering of CdS and ZnO layers. And the conversion efficiency of the CIGS solar cell was characterization. It was reached at 6.99% without AR layer.

• 한국진공학회지
• /
• 제21권3호
• /
• pp.142-150
• /
• 2012

CIGS 박막 태양전지 기판소재인 소다라임유리 표면에 플라즈마 전처리 후 DC 마그네트론 스퍼터링 방법으로 Mo 박막을 제조하였다. 증착압력과 증착시간 변화에 따른 Mo 박막의 물리적, 전기적 특성을 분석하였고, 셀렌화 처리 조건에 따른 $MoSe_2$ 생성 여부와 경향성을 연구하였으며, Mo 박막 두께에 따른 AZO/i-ZnO/CdS/CIGS/Mo/SLG 구조의 태양전지를 제조하여 그 특성을 분석 및 평가하였다. 증착압력이 4.9 mTorr에서 1.3 mTorr로 감소할수록 치밀하고 결정입자 사이의 공극이 적고, 증착속도가 감소하고 전기저항도가 낮은 Mo 박막이 증착되었다. 증착온도가 상온에서 $200^{\circ}C$로 증가할수록 Mo 박막은 치밀한 구조를 가지고 결정성은 향상되어 면저항이 낮게 나타났다. 셀렌화 시간이 길어질수록 Mo 박막 층은 줄어들고, $MoSe_2$ 층 생성두께가 커지는 것을 알 수 있었고, 열처리로 인해 결정화 되면서 전체 박막의 두께가 줄어들었으며, $MoSe_2$ 층의 배양성은 c축이 Mo 표면과 수직 방향으로 성장된 것을 알 수 있었다. Mo 박막의 두께가 1.2 ${\mu}m$와 0.6 ${\mu}m$인 AZO/i-ZnO/CdS/CIGS/Mo/SLG 구조로 이루어진 CIGS 박막 태양전지를 제조하였다. Mo 박막의 두께가 1.2 ${\mu}m$일 때 보다 0.6 ${\mu}m$일 때 CIGS 박막 태양전지의 변환 효율은 9.46%로 비교적 우수한 특성을 나타났다. CIGS 박막 태양전지에서 하부전극인 Mo 박막 특성은 유리기판 및 광흡수 층과의 계면 형성 따라 큰 영향을 미친다는 것을 알 수 있었고, 유리기판의 플라즈마 처리와 Mo 박막의 두께조절로 Na 효과 및 $MoSe_2$층 형성 제어함으로써 CIGS 박막 태양전지의 특성 개선에 효과를 가질 수 있었다.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2002년도 동계연구발표회 논문개요집
• /
• pp.94-95
• /
• 2002

Recently, we have seen a rapid advance in the evolving field of spin electronics (or spintronics). In spintronics, some feasibilities of new electronic applications utilizing spin degree of freedom have been explored. Diluted magnetic semiconductors (DMSs) are premising materials for spintronics because they have both charge and spin degree of freedom in a single substance. DMSs are refereed to semiconductor alloys in which some atoms are randomly substituted for by magnetic atoms. (omitted)