• Advances in materials Research
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• 제13권1호
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• pp.55-62
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• 2024

Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu_2-xZnSnS₄ (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu_2-xZnSnS₄ powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu_2-xZnSnS₄ samples was evaluated. A well-defined Cu_2-xZnSnS₄ powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1147-1149
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• 1993

ZnO/$SnO_2$:F bilayer films have been prepared by pyrosol deposition method to develop optimum transparent electrode for use in amorphous silicon solar cells. The solution for $SnO_2:F$ film was composed of $SnCl_4{\cdot}5H_2O,\;NH_4F,\;CH_3OH$ and HCl, and ZnO films have been deposited on the $SnO_2:F$ films by using the solution of $ZnO(CH_3COO){_2}{\cdot}2H_2O,\;H_2O\;and\;CH_3OH$. These films have been investigated the variation of electrical and optical properties under the hydrogen plasma exposure. The sheet resistance of the $SnO_2:F$ film was sharply increased and its transmittance was decreased with the blackish effect after plasma treatment. However, the ZnO/$SnO_2:F$ bilayer film was shown hydrogen plasma durability because the electrical and optical properties was almost unchanged more then 60 seconds exposure time.

• 신재생에너지
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• 제3권4호
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• pp.54-62
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• 2007

In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

• 전기화학회지
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• 제18권4호
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• pp.161-171
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• 2015

수열합성법을 이용하여 $Zn_2GeO_4$ 및 $Zn_2SnO_4$ 나노선을 대량 합성하였고 리튬이온 전지와 소듐이온전지의 전기화학적 특성을 조사하였다. 리튬이온전지에서 $Zn_2GeO_4$ 나노선은 50 사이클 이후에 1021 mAh/g, $Zn_2SnO_4$ 나노선은 692 mAh/g의 높은 방전용량을 갖는 것을 확인하였고 두 나노선 모두 98%가 넘는 쿨롱 효율을 보였다. 따라서 이들 나노선은 고성능 리튬이온전지의 개발을 위한 음극소재로 기대된다. 또한 소듐이온전지에 대한 관심이 국내는 물론 전 세계적으로 집중이 되고 있어 처음으로 $Zn_2GeO_4$과 $Zn_2SnO_4$ 나노선에 대한 소듐이온전지를 제작하여 용량을 측정하였다. 측정한 결과 이들 나노선은 50 사이클 이후에 각각 168 mAh/g 과 200 mAh/g의 방전용량을 갖는 것을 확인하였고 두 나노선 모두 97%가 넘는 높은 쿨롱 효율을 보였으며 이에 우리의 첫 시도가 앞으로 많은 연구에 기여할 것으로 예상한다.

• 한국재료학회지
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• 제8권4호
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• pp.312-316
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• 1998

ZnO와 $SnO_2$에$ TiO_2$를 첨가시킨 $ZnO-TiO_2$와$SnO_2$-$TiO_2$세라믹 복합체를 제작하여 1000ppm 일산화탄소에 대한 감응특성을 조사하였다. 상분석을 위해서 X-선 회절 분석을 하였고, 전자 주사 현미경을 이용해서 시편 파단면의 미세구조를 관찰했다. 일산화탄소 감도는 건조공기 분위기에서 측정한 저항($R_{dry air}$ )과 1000ppm 일산화탄소 분위기에서의 저항($R_{co}$ )을 측정하여 각각의 저항값의 비로 정의하였다. $TiO_{2}$첨가에 의한 ZnO의 일산화탄소 감도의 변화는 ZT5의 경우 최대 감도가 약 1.7배 감소하였고, $TiO _{2}$첨가에 의한 $SnO_{2}$의 일산화탄소 최대 감도는 약 2.5배 증가함으로써 비교적 $ZnO-TiO_2$배 증가함으로써 비교적 $ZnO-TiO_2$배 증가함으로써 비교적 $ZnO-TiO_2$복합체 보다는 $SnO_2$- $TiO_2$복합체의 일산화탄소 감응특성이 우수했다.

• 한국주조공학회지
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• 제28권4호
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• pp.184-189
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• 2008

Ag-Cd alloy has been widely used as an electrical contact material, since Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy is not considered as electrical contact material any more due to detrimental effect on environments. Currently, active researches are being performed on ($Ag-SnO_2$ and $Ag-SnO_{2}-In_{2}O_{3}$) as an alternative solution which can fix the remaining environmental problems. However, $In_{2}O_{3}$ is relatively expensive and Ag-Sn alloy has low wear resistance. Our recent research results show that Ag-X%Zn-Y%Sn has similar physical and chemical properties. In the present study, so we tried to change and to optimize the Zn oxide content to over 6 wt% and Sn oxide content with 0.5, 1.0, 1.5 wt%. Results obtained from the experiments on the Ag-X%ZnO-Y%$SnO_2$ are discussed.

• 한국재료학회지
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• 제8권1호
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• pp.33-37
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• 1998

Sn-Zn계 solder에서 Zn함량의 변화에 따른 납땜성을 납땜분위기 및 용제를 달리하여 연구하였다. 계면에서의 미세조직 관찰은 열처리온도를 8$0^{\circ}C$와 10$0^{\circ}C$로 달리하여 100일간 열처리한 후 관찰하였다. 젖음성 측정 결과, Zn함량이 증가함에 따라 젖음성은 감소하였고 RMA-용제를 사용한 경우가 R-용제를 사용한 경우에 비해 젖음성이 향상되었다. Sn-9Zn의 접촉각은 약 45도이고, 공기중에서 보다 질소 분위기에서 납땜한 경우가 젖음성 개선을 나타냈다. Sn-9Zn땝납과 Cu기판에서의 계면반응을 XRD, EDS로 분석한 결과 계면화합물은 r상(Cu$_{5}$Zn$_{3}$)으로 구성되어 있음을 알 수 있으며, 시효처리에 따라 접합부의 solder쪽에는 Zn상의 고갈이 나타남을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.221-223
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• 1995

The electrical conductivity of SnO$_2$added ZnO was investigated using the DC and AC methods. The electrical conductivity of SnO$_2$added ZnO was decreased with increasing the concentration of SnO$_2$. The cal쳐lated effective dielectric constants of 3 mol%, 5 mo1%, and 7 mol% are ~7, ~13, and ~120, respectively. The factor of the decrease for the electrical conductivity seems to be the increase of the resistance of grain decreasing the size of grain.

• 한국표면공학회지
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• 제13권3호
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• pp.146-154
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• 1980

The effects of various electrodeposition conditions (deposition temperature and cathode current density) on preferred orientation and microhardness of electrodeposited Ni-Sn and Sn-Zn alloys were studied. At deposition temperatures from 25$^{\circ}$ to 95$^{\circ}C$ and constant cathode current density of 270 and 530 A/$m^2$ Ni-Sn and Sn-Zn were codeposited in chloride-fluoride acid and stannate-cyanide alkaline electrolyte bath respectively. Ni-Sn alloy deposited at temperatures from 25$^{\circ}$ to 35$^{\circ}C$ was composed of single phase of $Ni_3Sn_4$ with 73 wt.% Sn and the one deposited at temperatures from 45$^{\circ}$ to 95$^{\circ}C$ was made of multiphase mixture of NiSn, $Ni_3Sn_2$ and $Ni_3Sn_4$ with nearly equiatomic composition (65.5 wt.% Sn). The random orientation of thermody-namically metastable NiSn phase (hexagonal structure) predominated at deposition temperature range 25$^{\circ}$-45$^{\circ}C$, and the strong (110) preferred orientation was found at 65$^{\circ}$-85$^{\circ}C$ and then disappeared again at 95$^{\circ}C$. The microhardness of Ni-Sn deposits increased with deposition temperature up to 85$^{\circ}C$, and then decreased at constant cathode current density. The preferred orientation and the maximum microhardness were discussed in terms of lattice contractile stress which result from desorption of hydrogen atom absorbed in deposit lattice. The Sn content of Sn-Zn alloy deposits increased with deposition temperature up to 75$^{\circ}C$, and then decreased at constant cathode current density of 530 A/$m^2$. It also decreased with cathode current density up to 530 A/$m^2$, and then increased at constant deposition temperature of 25$^{\circ}C$. Sn-Zn alloy deposits were composed of two-phase mixture of ${beta}$-Sn and Zn. The preferred orientations of ${beta}$-Sn (tetragonal structure) changed with deposition temperature. The microhardness of Sn-Zn deposits decreased with deposition temperature. It also increased with cathode density up to 530 A/$m^2$, and then decreased at constant deposition temperature of 25$^{\circ}C$. The microhardness of Sn-Zn deposits was observed to be determinded more by the Sn content than by the preferred orientation.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.85.2-85.2
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• 2010

$Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.