• Analytical Science and Technology
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• v.7 no.3
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• pp.293-299
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• 1994

Fifty ancient Korean coins originated in Choson period have been determined for 11 elements such as Sn, Fe, As, Au, Co, Sb, Ir, Os, Ru and Ni by destructive and non-destructive neutron activation analysis as well as for 3 elements such as Cu, Pb and Zn by atomic absorption spectroscopy. The multivariate data have been analyzed by principal component mapping method. The spread of sample points in the eigenvector polt has been attributed to common origins of some elements.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.121-124
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• 2016

ZnSnO₃ (ZTO)/Ag/ ZnSnO₃ (ZTO) trilayer films were prepared on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering. The electrical resistivity and optical transmittance of the films were investigated as a function of the Ag interlayer thickness. ZTO films with a 15 nm thick Ag interlayer show the highest average visible transmittance (83.2%) in the visible range. In this study, the highest figure of merit (2.1×10⁻² Ω cm) is obtained with the ZTO 50 nm/Ag 15 nm/ZTO 50 nm films. The enhanced optical and electrical properties of ZTO films with a 15 nm thick Ag interlayer are attributed to the crystallization of the Ag interlayer, as supported by the distinct XRD pattern of the Ag (111) peaks. From the observed results, higher optical and electrical performance of the ZTO film with a 15 nm thick Ag interlayer seems to make a promising alternative to conventional transparent conductive ITO films.

• Journal of Nutrition and Health
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• v.8 no.1
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• pp.39-46
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• 1975

This studies were designed to know the contents of trace element and magnesium in cereals. Twenty two kinds of cereal, 104'samples, were analyzed by atomic absorption spectrophotometer for the determination of Manganese, Iron, Magnesium, Chrome, Cupper, Nickel, Zinc, Stannous, Lead and Cadmium. The results are as follows: 1) The contents of Mn and Fe in the sesame group show highest value and next is bean group. In the rice group its content shows lowest value than other cereals. 2) In the Cr content its value is lower than other elements in cereals respectively. Cr content of sesame and bean group show higher than rice and barley group. 3) The contents of Cu and Ni in the sesame and bean group show higher value than the value of rice and barley group. Its contents of rice and barley group is almost equal in Cu and Ni. 4) For the Zn content the value of sesame group is higher than other cereals and next is bean group. In the Sn content the value of bean group shows higher one than other cereals. The contents of Zn and Sn in rice and barley group are lower than other cereals. 5) The value of Pb is almost equal to each cereal. The content of Cd in bear group and barley group show higher than other cereals and its value of rice group is equal to the value of barley group.

• Journal of Information Display
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• v.10 no.4
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• pp.137-142
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• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.725-731
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• 2000

Recrystallization behaviors of cold-worked and $\beta$-quenched Zr-Zn alloys were investigated by the microhardness tests and microscopic examinations. The recrystallization of the $\beta$-quenched alloys was retarded in comparison with that of the cold-worked alloys, suggesting that the stored energy of the cold-worked alloys is larger than that of the $\beta$-quenched alloys. Although initial hardness for the cold-worked and the $\beta$-quenched specimens had an equal value, the recrystallization behaviors were observed to be quite different. Based on the transmission electron microscope(TEM) studies, it was suggested that the recrystallization of the cold-worked specimen would have occurred by subgrain coalescence while that of $\beta$-quenched specimen by strain-induced grain boundary migration.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1127-1131
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• 2003

Phosphate glasses known for low melting temperature glasses in electrical parts has been recently used in wide area with modification of thermal properties using alkali oxides. It is our purpose to find a correlation between thermal expansion coefficient, glass transition temperature and melting temperature through investigating thermal properties in P$_2$O$\sub$5/-SnO-ZnO-SiO$_2$/B$_2$O$_3$. As a result, the product of thermal expansion coefficient and the glass transition temperature in the glasses is found to be a constant value would be a unique value for knowing one of thermal properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.177-182
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• 2013

Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.268-268
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• 2010

The performance dependence of the P3HT:PCBM based bulk hetero-junction (BHJ) organic solar cells (OSCs) on the electrical and the optical properties of amorphous InZnSnO (a-IZTO) electrodes as a difference in film thicknesses are examined. With an increasing of the a-IZTO thickness, the series resistance ($R_{series}$) of the OSCs is reduced because of the reduction of sheet resistance ($R_{sheet}$) of a-IZTO electrodes. Additionally, It was found that the photocurrent density ($J_{sc}$) and the fill factor (FF) in OSCs are mainly affected by the electrical conductivity of the a-IZTO anode films rather than the optical transparency at thinner a-IZTO films. On the other hand, despite the much lower $R_{series}$ comes from thicker anode films, the dominant factor affecting the $J_{sc}$ became average optical transmittance of a-IZTO electrodes as well as power conversion efficiency (PCE) in same device configuration due to the thick anode films had as sufficiently low $R_{sheet}$ to extract the hole carrier from the active material.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.318.1-318.1
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• 2013

Nowadays Cu2ZnSnS4 (CZTS) solar cell is attracting a lot of attention as a strong alternative to CIGS solar cell due to nontoxic and inexpensive constituent elements of CZTS. From various processes for the fabrication of CZTS solar cell, solution-based deposition of CZTS thin films is well-known non-vacuum process and many researchers are focusing on this method because of large-area deposition, high-throughput, and efficient material usage. Typically the solution-based process consists of two steps, coating of precursor solution and annealing of the precursor thin films. Unlike vacuum-based deposition, precursor solution contains unnecessary elements except Cu, Zn, Sn, and S in order to form high quality precursor thin films, and thus the precise control of precursor thin film preparation is essential for achieving high efficient CZTS solar cells. In this work, we have investigated the effect of preparation condition of CZTS precursor thin films on the performance of CZTS solar cells. The composition of CZTS precursor solution was controlled for obtaining optimized chemical composition of CZTS absorber layers for high-efficiency solar cells. Pre-annealing process of the CZTS precursor thin films was also investigated to confirm the effect of thermal treatment on chemical composition and carbon residues of CZTS absorber layers. The change of the morphology of CZTS precursor thin film by the preparation condition was also observed.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.381-383
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• 2021

Light-activated metal oxide gas sensors have been investigated in recent decades. Light illumination enhances the sensing attributes, including the operational temperature, sensitivity, and selectivity. Unfortunately, high operating temperature is a major problem for gas sensors because of the huge energy consumption. Therefore, the importance of light-activated room-temperature sensing has increased. This paper reviews recent light-activated sensors and their sensing mechanisms with a specific focus on metal oxide gas sensors. Studies use the outstanding ZnO and SnO₂ sensors to research photoactivation when illuminated by various sources such as ultraviolet (UV), halogen lamp, or monochromatic light. Photon induction generates electron-hole pairs that increase the number of adsorption sites of gas molecules and ions improving the sensor's sensing properties.