• Journal of Welding and Joining
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• 제31권4호
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• pp.7-12
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• 2013

The dissimilar welding between magnesium alloy and steel sheet was required in automobile industry to increase the strength of the dissimilar joints. Laser brazing is one of the good joining processes for Mgsteel dissimilar joint. In this study, the effect of coating materials was evaluated on the laser brazing for the dissimilar joint between AZ31 and coated steels such as Zn, Sn and Ni. Diode direct laser was used to braze the lap-edge joint with Mg600 filler wire and Superior #21 flux. The wettability was best on Zn coated steel. The interlayer was formed at the interface between brazement and steel for all coating materials. The strengths of brazed specimen were 146.5N/mm, 204.6N/mm and 101.6N/mm for Zn, Sn and Ni coated steel respectively.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2005년도 춘계임시총회 및 제25회 학술발표대회
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• pp.214-223
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• 2005

In order to recover valuable metals from fine-grained electronic waste, bioleaching of Cu, Zn, Al, Co, Ni, Sn and Pb were carried out using Aspergillus niger as a leaching microorganism in a shaking flask. Aspergillus niger was able to grow in tile presence of electronic scrap. The formation of organic acids(citric and oxalic acid) from Aspergillus niger caused the mobilization of metals from waste electronic scrap. In a preliminary study, in order to obtain the data on the leaching of Cu, Zn, Al, Co and Ni, the metal leaching behaviours were accomplished using Organic acid(Citric acid and Oxalic acid) instead of Aspergillus niger. At the electronic scrap concentration of 50g/L, Aspergillus niger were able to leach more than 95% of the available Cu, Co. But Al, Zn, Pband Sn were able to leach about 15-35%. Ni and Fe were detected in the leachate less than 10%.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.224-224
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 춘계연구발표회 논문개요집
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• pp.82-83
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.167-167
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.124.2-124.2
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• 보존과학회지
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• 제1권1호
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• pp.27-39
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• 1992

Metallurgical studies of the bronze artifacts excavated from Miruksa Temple were performed by chemical analysis and metallographic observation. Alloy systems of the bronze artifacts were classified into two groups of Cu-Sn and Cu-Sn-Pb, according to the items. The contents of impurities such as Sb, As, Ni and Fe in bronze artifacts are within the limiting range of the mod ern standard bronze castings. Chemical compositions of the kitchen utensils such as bronze vessels and dishes in the Unified Silla dynasty, are in the follow ing range, Cu : 74.8-79.4% and Sn : 18.6-21.1%. Chemical composition of the Buddha-image in Koryo dynasty are 820Cu-7.0Sn-10.3Pb, showing increased Pb content and decreased Sn content. The results of chemical analysis suggest that the chemical compositions were good controlled. Any casting defects such as voids and shrinkage holes are not found microscopically, indicating high casting skill. Zinc atoms are not contained in the all bronze artifacts of Miruksa Temple site. This is the common facts founded in the east asian bronze artifacts of Korea, China and Japan. It is comparable with the European bronze of Cu-Sn-Pb-Zn system, after the Middle Age.

• 한국재료학회지
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• 제30권6호
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• pp.285-291
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• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.