• 보존과학연구
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• s.6
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• pp.121-196
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• 1985

Atomic absorption spectrophotometer was used for analyzing each 10elements(Cu, Pb, Sn, Zn, Sb, Fe, Ni, Ag, Co and Mn)on 64 Chinese coinsre covered from Shinan seabed sunken ship. The results show that Cu, Pb and Sn were found to be a major elements consisting of coins and its composition ratio was 6 to 2 to 1.The composition of trace elements on coins was classified 3 levels : Sb, Fe and Zn(0.02%-2.2%), Ag, Ni, and Co(50 ppm-5500 ppm) and Mn(Trace). Theam ount of major elements, Cu and Sn were decreased while increased in Pbby the passage of ages (10th - 13th century) in China. There seems to be no systematic compositional change in major elements but content in trace elements was confirmed to increase with age.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.423-423
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• 2012

ZnO, SnO2, In2O3:Sn와 같은 투명하고 전도성이 있는 박막은 panel display, 전자발광소자, 박막트랜지스터, 태양전지 등의 전극물질로서 폭넓게 사용되고 있다. 이러한 전극 물질을 이용하는 광전자소자의 성능을 개선하기 위해서는 가시광선영역에서 광투과율이 높고, 전기전도도가 좋아야 한다. 최근 ZnO, SnO2, In2O3, MgO, Ga2O3 등으로 이루어진 3원 또는 다원화합물로 제조된 산화물 박막이 새로운 투명한 전도성 박막으로 많은 관심을 끌고 있다. 본 연구에서는 Ga2O3 박막을 radio-frequency magnetron sputtering 방법을 이용하여 증착하였다. 기존에 사용되던 ceramic target을 개선하여 powder target을 사용하였다. 반응가스는 순수하게 Ar 가스만 사용하였고, Sapphire(0001) 기판을 사용하였다. 초기에는 flat한 layered 구조로 증착이 이루어졌으나, 증착시간이 20분이 지나면서부터는 밤송이 모양을 가지는 나노구조체가 생성되기 시작하였고, 이후 나노 밤송이의 밀도가 점차 증가하였다. Ga2O3 나노 밤송이의 특성에 대하여 발표할 예정이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.282-285
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• 2014

We have investigated the structural and electrical properties of Si-Zn-Sn-O (SZTO) thin films deposited by RF magnetron sputtering at various deposition temperatures from RT to $350^{\circ}C$. All the SZTO thin fims are amorphous structure. The mobility of SZTO thin film has been changed depending on the deposition temperature. SZTO thin film transistor shows mobility of 8.715 $cm^2/Vs$ at room temperature. We performed the electrical stress test by applying gate and drain voltage. SZTO thin film transistor shows good stability deposited at room temperature while showing poor stability deposited at $350^{\circ}C$. As a result, the electrical performance and stability have been changed depending on deposition temperature mainly because high deposition temperature loosened the amorphous structure generating more oxygen vacancies.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.114-118
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• 2016

$Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

• Advances in nano research
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• v.5 no.3
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• pp.203-214
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• 2017

In this study we present the reaction mechanism of $Cu_2ZnSnSe_4$ (CZTSe) nanoparticles synthesized by microwave-assisted chemical synthesis. We performed reactions every 10 minutes in order to identify different phases during quaternary CZTSe formation. The powder samples were analyzed by x-ray diffraction (XRD), Raman spectroscopy, energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The results showed that in the first minutes copper phases are predominant, then copper and tin secondary phases react to form ternary phase. The quaternary phase is formed at 50 minutes while ternary and secondary phases are consumed. At 60 minutes pure quaternary CZTSe phase is present. After 60 minutes the quaternary phase decomposes in the previous ternary and secondary phases, which indicates that 60 minutes is ideal reaction time. The EDS analysis of pure quaternary nanocrystals (CZTSe) showed stoichiometric relations similar to the reported research in the literature, which falls in the range of Cu/(Zn+Sn): 0.8-1.0, Zn/Sn: 1.0-1.20. In conclusion, the evolution pathway of CZTSe synthesized by this novel method is similar to other synthesis methods reported before. Nanoparticles synthesized in this study present desirable properties in order to use them in solar cell and photoelectrochemical cell applications.

• Journal of Korea Foundry Society
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• v.32 no.2
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• pp.91-97
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• 2012

The effects of Bi and Sb additions on the microstructures and casting properties in lead-free Cu-Zn-Sn broze were investigated. (1) When only Bi was added to the bronze, Bi was precipitated on the ${\delta}$ phase of ${\alpha}$ dendrite cell boundary. When Bi and Sb were added together, Bi was precipitated on the ${\delta}_A$ which was the Sb-rich area in the ${\delta}$ phase. (2) The addition of Sb accelerated the formation of ${\delta}$ phase, and when Sb, Bi and Pb were added, Bi and Pb were precipitated as mixed solution in the ${\delta}_A$ phase. (3) The combined addition of Sb and Bi resulted in the suppression of shrinkage due to the complementary effects of the mass feeding of ${\alpha}$-dendrite cluster covered with ${\delta}$ phase and sealing of micro-shrinkage in the ${\delta}$ phase by solidification expansion of Bi.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.130-137
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• 1994

Indium, element of group III, was refined by using zone refining for high purity refinement. We have found the impurities of T1, Zn, Fe, Cd, Pb, Ni, Cu, Sn in the refined indium with ICP-AES, so that 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.7 ppm, 2.8 weight ppm of Cd was reduced to 2.5 ppm and 14.0 weight ppm of Sn was reduced to 6.7 ppm with 5 melten zone passes only. 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.3 ppm, 2.8 weight ppm of Cd was reduced to less than 1.0 ppm and 14.0 weight ppm of Sn was reduced to 0.4 ppm after vacuum baking with 5 melten zone passes. The surface morpholgy of metal Indium thin film in each conditions showed that porosities were reduced in the front of sampled ingot after vacuum baking with 5 zone melten zone passes. The average electrical resistivity of Indium thin film was reduced from 1.4*10$^{-3}$ .ohm.-cm in Indium origin ingot to 7.9*10$^{-6}$ .ohm.-cm after zone refined with 5 melten zone passes.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.708-712
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• 2015

This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

• Journal of Ceramic Processing Research
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• v.20 no.1
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• pp.80-83
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• 2019

The Mn4+-activated Li2ZnSn2O6 (LZSO:Mn4+) red phosphors were synthesized by the solid-state reaction at temperatures of 1100-1400 ℃ in air. The synthesized LZSO:Mn4+ phosphors were confirmed to have a single hexagonal LZSO phase without the presence of any secondary phase formed by the Mn4+ addition. With near UV and blue excitation, the LZSO:Mn4+ phosphors exhibited a double band deep-red emission peaked at ~658 nm and ~673 nm due to the 2E → 4A2 transition of Mn4+ ion. PL emission intensity showed a strong dependence on the Mn4+ doping concentration and the 0.3 mol% Mn4+-doped LZSO phosphor produced the strongest PL emission intensity. Photoluminescence emission intensity was also found to be dependent on the calcination temperature and the optimal calcination temperature for the LZSO:Mn4+ phosphors was determined to be 1200 ℃. Dynamic light scattering (DLS) and field-effect scanning electron microscopy (FE-SEM) analysis revealed that the 0.3 mol% Mn4+-doped LZSO phosphor particles have an irregularly round shape and an average particle size of ~1.46 ㎛.

• Journal of Plant Biology
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• v.16 no.3_4
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• pp.40-44
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• 1973

Hawkeye(Fe-chlorosis resistant) and PI 54619-5-1(Fe-chlorosis sensitive) soybeans were grown with and without DPTA(diethylene triamine pentaacetic acid) in Yolo loam soil. The major purpose of the study was to compare leaf-stem distribution of microelements for different treatments which increase concentrations of microelements in plants to evaluate the role of the chelating agent in increasing translocation of the microelements. Plant responses and yields were recorded and Fe, Mn, Zn, Cu, Al, Co, N, Sn, Pb and Mo contents of leaves and stems were determined by emission spectrography. Sulfur(soil pH4) increased leaf concentrations of Mn, Zn, Cu, CO, Ni, Sn and Pb. DTPA, particularly at 50ppm in soil, increased leaf concentrations of Fe, Mn, Zn, Cu, Co, Ni and Mo. It increased Ti in leaves for the PI 54619-5-1 soybeans only. DTPA increased the ratios of the concentration in leaves to that in stems for Fe, Zn, Cu, Al, Ti, CO, Ni and Mo. Sulfur which increased the microelement concentration in both leaves and stems did not have this effect. DTPA increased the ratio at soil pH 6 and 8.5 in leaves to that in stems of the bush bean plants for Fe, Zn, Cu, Ni, but to a lesser extent in bush beans than in soybeans. PI 54619-5-1 soybeans tended to contain less of most of the metals than did Hawkeye soybeans.