• Title/Summary/Keyword: Zn Diffusion

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Growth of GaN on ZnO Substrate by Hydride Vapor-Phase Epitaxy (ZnO 기판 위에 Hydride Vapor-Phase Epitaxy법에 의한 GaN의 성장)

  • Jo, Seong-Ryong;Kim, Seon-Tae
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.304-307
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    • 2002
  • A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

Electric properties Analysis and fabrication of ZnO:As/ZnO:Al homo-junction LED (ZnO:As/ZnO:Al homo-junction LED의 제조와 전기적 특성 분석)

  • Kim, Kyeong-Min;So, Soon-Jin;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.55-56
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    • 2007
  • The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Using the ampoule-tube to fabricate the p-type ZnO will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

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Surface Oxidation of High Strength Automotive Steels during Continuous Annealing, and the Influence of Trace Elements of P,B, and Sb

  • Sohn, Il-Ryoung;Park, Joong-Chul;Kim, Jong-Sang
    • Corrosion Science and Technology
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    • v.9 no.6
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    • pp.259-264
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    • 2010
  • In continuous hot dip galvanizing process, oxide formation on steel surface has an influence on Zn wetting. High strength automotive steel contains high amount of Si and Mn, where Si-Mn composite oxides such as $Mn_2SiO_4$ or $MnSiO_3$ covers the surface after annealing. Zn wetting depends on how the aluminothermia reaction can reduce the Mn-Si composite oxides and then form inhibition layer such as $Fe_2Al_5$ on the steel surface. The outward diffusion of metallic ions such as $Mn^{2+}$, $Si^{2+}$ in the steel matrix is very important factor for the formation of the surface oxides on the steel surface. The surface state and grain boundaries provide an important role for the diffusion and the surface oxide reactions. Some elements such as P, Sb, and B have a strong affinity for the interface precipitation, and it influence the diffusivity of metallic ions on grain boundaries. B oxide forms very rapildly on the steel surface during the annealing, and this promote complex oxides with $SiO_2$ or MnO. P has inter-reacted with other elements on the grain boundaries and influence the diffusion through on them. Small addition of Sb could suppress the decarburization from steel surface and retards the formation of internal and external selective oxides on the steel surface. Interface control by the trace elements such as Sb could be available to improve the Zn wettability during the hot dip galvanizing.

Effect of Insulating Paste and 2nd Firing Process in ZnO Varistor (ZnO varistor에서의 절연 도포제 및 2차 열처리 효과)

  • Lee, Nam-Yang;Kim, Myung-Sik;Chung, In-Jae;Oh, Myung-Hwan
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.821-823
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    • 1988
  • The electrical properties of ZnO varistors fabricated by the second firing method were investigated. The nonlinear coefficient of ZnO varistor fabricated by this method is similar to that of commercial ZnO varistor. But the breakdown voltage is higher than that of commercial ZnO varistor. These results are attributed to grain boundary diffusion of $Bi_{2}O_{3}$ by second firing.

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The Characteristics of Hetero Junction Using NiCuZn Ferrite and Dielectric for LTCC (LTCC를 위한 NiCuZn 페라이트계와 유전체의 이종접합의 특성)

  • Kim, Nam Hyun;Park, Hyun;Kim, Kyung Nam
    • Journal of the Korean institute of surface engineering
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    • v.45 no.5
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    • pp.188-192
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    • 2012
  • The hetero junction on dielectrics and ferrite for LTCC was prepared by using NiCuZn ferrite. The shrinkage behaviour of ferrite tapes in combination with a dielectric tape was investigated. The characteristics of NiCuZn ferrite were investigated using XRD (X-ray diffractometer), Dilatometer, FE-SEM (Field emission scanning electron microscope), EDS (Energy dispersive spectrometer). NiCuZn ferrite calcined at $700^{\circ}C$ had a good apparent density and initial permeability of magnetic properties. The shrinkage rate of the NCZF700 ferrite and dielectric material was similar. The multilayer revealed dense, uniform morphologies with excellent interface quality. Diffusion of hetero junction such as dielectric and ferrite was not occuring at $900^{\circ}C$.

Optical Properties of ZnO-ZnMgO Quantum Wells Grown by Atomic Layer Deposition Technique (원자층 증착법으로 성장한 ZnO-ZnMgO 양자우물의 광전이 특성)

  • Shin, Y.H.;Kim, Yongmin
    • Journal of the Korean Vacuum Society
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    • v.22 no.1
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    • pp.7-12
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    • 2013
  • We fabricated ZnO-ZnMgO single quantum well (SQW) samples having different well-widths by using the atomic layer deposition technique. The QW samples exhibit different optical transition behaviors with different QW widths. We confirm that when the well-width of 1.5 nm does not have a confined quantum energy level due to the Mg diffusion into the well caused by after-thermal treatment whereas the QWs wider than 1.5 nm show optical transitions between the confined energy levels.

Reliability Investigation and Interfacial Reaction of BGA packages Using the Pb-free Sn-Zn Solder (Sn-Zn 무연솔더를 사용한 BGA패키지의 계면반응 및 신뢰성 평가)

  • Jeon, Hyeon-Seok;Yun, Jeong-Won;Jeong, Seung-Bu
    • Proceedings of the KWS Conference
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    • 2005.06a
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    • pp.25-27
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    • 2005
  • Sn-9Zn solder balls were bonded to Cu and ENIG (Electroless Nickel/Immersion Gold) pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Sn-9Zn/ENIG, the shear strength remained nearly constant in spite of aging for 1000 hours at $150^{\circ}C$. On the other hand, in the case of the Sn-9Zn/Cu, the shear strength significantly decreased after aging at $150^{\circ}C$ for 100hours and then remained constant by further prolonged aging. Therefore, the protective plating layer such as ENIG must be used to ensure the mechanical reliability of the Sn-9Zn/Cu joint.

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Electrochemical Behavior of Zn(II)-Bilirubin Complex in N,N-Dimethylformamide (N,N-Dimethylformamide 용액 중에서 Zn(II)-Bilirubin 착물의 전기화학적 거동)

  • Zun-Ung Bae;Heung-Lark Lee;Tae-Myung Park;Moo-Lyong Seo
    • Journal of the Korean Chemical Society
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    • v.37 no.7
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    • pp.672-676
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    • 1993
  • The complexation of bilirubin with zinc(II) and copper(II) ions was studied spectrophotometrically. In the zinc(II)-bilirubin (Zn-BR) system, complex is formed, but the copper(II) ion oxidizes bilirubin to biliverdin and then to the further oxidation products. The electrochemical reduction behavior of ZN-BR complex has been investigated with DC polarography and cyclic voltammetry. The three polarographic waves were obtained for the reduction of ZN-BR complex in DMF solution. Thde reduction current of the third wave was diffusion current, but that of the first and the second waves contained a little kinetic current.

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Optical Properties of Semiconductors Depending on the Contact Characteristic Between Different Groups (이종 물질의 접합계면에 의한 반도체 물질의 광학적 특성)

  • Oh, Teresa;Nho, Jong Ku
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.2
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    • pp.71-75
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    • 2014
  • To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

Kinetic and Effectiveness Factor for Methanol Steam Reforming over CuO-ZnO-Al2O3 Catalysts (CuO-ZnO-Al2O3 촉매에서의 메탄올 수증기 개질반응에 대한 반응속도와 유효성인자)

  • Lim, Mee-Sook;Suh, Soong-Hyuck
    • Transactions of the Korean hydrogen and new energy society
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    • v.13 no.3
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    • pp.214-223
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    • 2002
  • Kinetic and effectiveness factors for methanol steam reforming using commercial copper-containing catalysts in a plug flow reactor were investigated over the temperature ranges of $180-250^{\circ}C$ at atmospheric pressure. The selectivity of $CO_2$/$H_2$ was almost 100%, and CO products were not observed under reaction conditions employed in this work. It was indicated that $CO_2$ was directly produced and CO was formed via the reverse water gas shift reaction after methanol steam reforming. The intrinsic kinetics for such reactions were well described by the Langmuir-Hinshelwood model based on the dual-site mechanism. The six parameters in this model, including the activation energy of 103kJ/mol, were estimated from diffusion-free data. The significant effect of internal diffusion was observed for temperature higher than $230^{\circ}C$ or particle sizes larger than 0.36mm. In the diflusion-limited case, this model combined with internal effectiveness factors was also found to be good agreement with experimental data.