• Nano
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• 제13권12호
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• pp.1850148.1-1850148.9
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• 2018

The interconnected three-dimensional Ni-Co-S nanosheets were successfully deposited on ZnO nanorods by a one-step potentiostatic electrodeposition. The Ni-Co-S nanosheets provide a large electrode/electrolyte interfacial area which has adequate electroactive sites for redox reactions. Electrochemical characterization of the ZnO@Ni-Co-S core-shell nanorods presents high specifc capacitance (1302.5 F/g and 1085 F/g at a current density of 1 A/g and 20 A/g), excellent rate capabilities (83.3% retention at 20 A/g) and great cycling stability (65% retention after 5000 cycles at a current density of 30 A/g). The outstanding electrochemical performance of the as-prepared electrode material also can be ascribed to these reasons that the special structure improved electrical conductivity and allowed the fast diffusion of electrolyte ions.

• 한국결정성장학회지
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• 제14권5호
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• pp.226-232
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• 2004

One predicts the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration based on one dimensional advection-diffusion and two-dimensional diffusion-convection model. The present results show that for the ratios of partial pressures, s = 0.2 and 2.9, the growth rate increases with the temperature differences between the source and crystal. As the ratio of partial pressure approaches the stoichiometric value, s = 2 from s = 1.5 (zinc-deficient case: s < 2) and 2.9 (zinc-rich case: s > 2), the rate increases sharply. For the ranges from 1.5 to 1.999 (zinc-deficient case: s < 2) and from s = 9 to 2.9 (zinc-rich case: s > 2), the rate are slightly varied. From the viewpoint of the order of magnitude, the one-dimensional model for low vapor pressure system falls within the 2D predictions, which indicates the flow fields would be advective-diffusive. For the effects of gravitational accelerations on the rate, the gravitational constants are varied from 1 g to $10^{-6}$ g for $\Delta$T = 50 K and s = 1.5, the rates remain nearly constant, i.e., 211 mg/hr, which indicates Stefan flow is dominant over convection.

• 전자공학회논문지A
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• 제29A권4호
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• pp.38-48
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• 1992

OEIC(Optoelectronic Integrated Circuit)'s can be integrated horizontally or vertically. Horizontal integration approach is, however, more immune to parasitic and more universally applicable. In this paper, a structural modeling, fabrication and characterization of PIN photodiodes which can be used in the horizontal integration are performed. For device modeling, we build a transmission line model from 2-D device simulation, from which lumped model parameters are extracted. The speed limits of the PIN photodiodes can also be calculated under various structural conditions from the model. Thus optimum design of horizontally integrated PIN photodiodes for high speed operation are possible. Such InGaAs/InP PIN photodiodes for long-wavelength communications are fabricated using pit etch, epi growth, planarization, diffusion and metallization processes. Planarization process using both RIE and wet etching and diffusion process using evaporated Zn$_{3}P_{2}$ film are developed. Characterization of the fabricated devices is performed through C-V and I-V measurements. At a reserve bias of 10V, the dark current is less than 5nA and capacitance is about 0.4pF. The calculated bandwidth using the measured series resistance and capacitance is about 4.23GHz.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.961-968
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• 2009

In this work, transparent conductive oxide(TCO) films such as $In_2O_3-SnO_2$(ITO) and $In_2O_3-ZnO$(IZO) were prepared on polyethylene naphthalene(PEN) and glass substrates by using rf-magnetron sputtering system. The TCO films deposited on PEN substrate show very poor conductivity as compared to that of the TCO films deposited on glass substrates. From the results of the residual gas analysis(RGA) test, this poor stability of plastic substrate is presumed to be caused by the deteriorated adhesion between the TCO films and the plastic substrate due to outgassing from the plastic substrate during deposition of TCO films. From our experiment, it is found that the vaporization of some defects in the plastic substrates deteriorate the adhesion of the TCO films to the plastic substrate, because the most plastic substrates containing the water vapor and/or other adsorbed particles such as organic solvents. Mixing of these gases vaporized in the sputtering process will also affect the electrical property of the deposited TCO films. Inorganic thin composite $(SiO_2)_{40}(ZnO)_{60}$ film as a gas barrier layer is coated on the PEN substrate to protecting the diffusion of vapors from the substrate, so that the TCO films with an improved quality can be obtained.

• Bulletin of the Korean Chemical Society
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• 제31권9호
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• pp.2598-2602
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• 2010

Two 3-D zinc framework compounds, $[Zn_6(BTB)_4(4,4'-bipy)_4(H_2O)_4]{\cdot}9H_2O$ (1) and $[Zn_3(BTB)_2(4,4'-bipy)_2(H_2O)_2]{\cdot}5H_2O$ (2) ($H_3BTB$ = 1,2,3-benzenetricarboxylic acid, 4,4'-bipy = 4,4'-bipyridine), are obtained from the diffusion method and hydrothermal reaction respectively. Though 1 and 2 has the same coordination geometries of zinc atoms and coordination mode of $BTB^{3-}$, their 2-D layers are different: mirror symmetric layers in 1; parallel ones in 2, further connecting by 4,4'-bipy into 3-D frameworks. The hydrothermal reaction of 2 results in a more stable 3-D framework than the one in 1, which is supported by the single point energy calculations. 1 and 2 show similar blue fluorescence at 417 nm, which can be assigned to LMCT.

• Mycobiology
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• 제36권4호
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• pp.260-265
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• 2008

Cyclic voltammetric measurements were performed for Co(II), Ni(II), Cu(II) and Zn(II) complexes of 1 : 1 alternating copolymer, poly(3-nitrobenzylidene-1-naphthylamine-co-succinic anhydride) (L) and Ni(II) and Cu(II) complexes of 1 : 1 alternating copolymer, poly(3-nitrobenzylidene-1-naphthylamine-co-methacrylic acid) ($L^1$). The in vitro biological screening effects of the investigated compounds were tested against the fungal species including Aspergillus niger, Rhizopus stolonifer, Aspergillus flavus, Rhizoctonia bataicola and Candida albicans and bacterial species including Staphylococcus aureus, Escherichia coli, Klebsiella pneumaniae, Proteus vulgaris and Pseudomonas aeruginosa by well diffusion method. A comparative study of inhibition values of the copolymers and their complexes indicates that the complexes exhibit higher antimicrobial activity. Copper ions are proven to be essential for the growth-inhibitor effect. The extent of inhibition appeared to be strongly dependent on the initial cell density and on the growth medium. The nuclease activity of the above metal complexes were assessed by gel electrophoresis assay and the results show that the copper complexes can cleave pUC18 DNA effectively in presence of hydrogen peroxide compared to other metal complexes. The degradation experiments using Rhodamine B dye indicate that the hydroxyl radical species are involved in the DNA cleavage reactions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.276-276
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• 2012

The interface morphology of organic active layers is known to play a crucial role in the performance of organic photovoltaic (OPV) cells. Especially, a controlled nanostructure with a large contact area between electron donor (D) and acceptor (A) layers is necessary to improve the power conversion efficiency (PCE) of the cells since the short exciton diffusion lengths in organic semiconductors limit the charge (hole and electron) separation before excitons recombination. In this work, we developed simple solvent treating methods to fabricate a nanostructured DA interface and applied them to enhance the PCE of ZnPc/C60 based small molecule OPV cells. Interestingly, it was observed that the solvent treatment on the donor layer prior to the deposition of the acceptor layer resulted in a significant decrease in PCE, which was due to an existence of undesirable voids at the DA interface. Instead, the solvent vapor treatment after the DA bilayer formation led to densely packed and well dispersed DA contacts. Consequently, 3-fold enhancement of PCE as compared to the untreated bilayer cell was accomplished.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.399-399
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• 2011

본 논문에서는 Indium tin oxide (ITO) 투명전극의 성장온도($T_G$)가 Cu(In,Ga)$Se_2$ (CIGS) 박막태양전지에 미치는 영향을 살펴 보았다. ITO 박막은 radio-frequency magnetron sputtering을 이용하여 상온에서 $350^{\circ}C$까지의 다양한 $T_G$ 조건에서 i-ZnO/ glass와 i-ZnO/CdS/CIGS/Mo/glass 기판에 증착되었다. ITO의 비저항과 CdS/CIGS 계면 특성은 $T_G$에 크게 영향을 받았다. $T_G{\leq}200^{\circ}C$에서는 $T_G$가 증가할수록 ITO 저항이 감소하였고 이에 따른 series 저항 감소가 태양전지 성능 향상에 기여하였다. 하지만 $T_G$ > $200^{\circ}C$에서는 CdS 버퍼층의 Cd이 CIGS 층으로 확산되어 소자의 p-n 계면이 파괴되는 것을 발견하였다. $T_G=200^{\circ}C$에서 ITO를 증착한 CIGS 태양전지의 경우 가장 높은 광전변환효율을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.50-53
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• 1992

The GaP crystals are growth by Synthesis Solute Diffusion(SSD) method and its properties are investigated. Etch pits density along vertical direction of ingot is increased from 3.8${\times}$10$^4$cm$\^$-2/ of first freeze to 2.3${\times}$10$\^$5/cm$\^$-2/ of last freeze part. The carrier concentration and mobilities are measured to 197.49$\textrm{cm}^2$/V. sec and 6.75${\times}$10$\^$15/cm$\^$-3/ at room temperature. The temperature dependence of optical energy gap is empilically fitted to E$\_$g/(T)=2.3383-(6.082${\times}$10$\^$-4/T${\times}$/(373.096+T)[eV]. Photo-luminescence spectra measured at low temperature are consist with sharp line-spectra near band-gap energy and radiative recombination between shallow Si-donor to Zn-acceptor and its phonon reprica, and broad emission. The infrared absorption in GaP is cause to phonon coupling modes of TO, LO, LA, TA$_1$, TA$_2$and vibration modes of Ga$_2$O, Si-donor and Zn-acceptor, respectively.

• 한국분말재료학회지
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• 제12권2호
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• pp.131-135
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• 2005

7xxx series Al alloy has the most attractive properties including its excellent high specific strength, stress corrosion cracking and corrosion-resistance. However, in case of the Al-Zn system, the liquid phase has a transient aspect because of the high solid solubility of Zn in Al. Therefore, transient liquid phase sintering behavior was observed during the sintering process. And the amount of liquid and its duration were influenced by the process variables including heating rate and final sintering temperature. At high heating rates($100^{\circ}C/min$), the liquid fraction increased during sintering because diffusion was minimized and therefore local saturation could easily occur. The sintered density increased with increasing heating rate.