• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.168-171
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• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.

• Mycobiology
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• v.36 no.2
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• pp.93-98
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• 2008

Two Schiff base ligands $L_1\;and\;L_2$ were obtained by the condensation of glycylglycine respectively with imidazole-2-carboxaldehyde and indole-3-carboxaldehyde and their complexes with Zn(II) were prepared and characterized by microanalytical, conductivity measurement, IR, UV-Vis., XRD and SEM. The molar conductance measurement indicates that the Zn(II) complexes are 1:1 electrolytes. The IR data demonstrate the tetradentate binding of $L_1$ and tridentate binding of $L_2$. The XRD data show that Zn(II) complexes with $L_1\;and\;L_2$ have the crystallite sizes of 53 and 61 nm respectively. The surface morphology of the complexes was studied using SEM. The in vitro biological screening effects of the investigated compounds were tested against the bacterial species Staphylococcus aureus, Escherichia coli, Klebsiella pneumaniae, Proteus vulgaris and Pseudomonas aeruginosa and fungal species Aspergillus niger, Rhizopus stolonifer, Aspergillus flavus, Rhizoctonia bataicola and Candida albicans by the disc diffusion method. A comparative study of inhibition values of the Schiff base ligands and their complexes indicates that the complexes exhibit higher antimicrobial activity than the free ligands. Zinc ions are proven to be essential for the growth-inhibitor effect. The extent of inhibition appeared to be strongly dependent on the initial cell density and on the growth medium.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.477-480
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• 2014

An $Al_2O_3$-CuO-ZnO (ACZ) precursor powder was synthesized by a facial sol-gel process using a nonionic surfactant span 80 as the chelating agent to improve the surface area and morphology. When creating a hydrogen membrane, several kinds of properties are required, such as easy dissociation of hydrogen molecules, fast hydrogen diffusion, high hydrogen solubility, and resistance to hydrogen embrittlement. ACZ-Ni composite membranes (cermet) were prepared with this precursor and pure Ni powder via the hot press sintering (HPS) method. The ACZ powder was characterized by XRD, BET, and FE-SEM. Hydrogen permeation experiments were performed by Sievert's type of hydrogen permeation membrane equipment. The hydrogen permeability of ACZ/Ni 10 wt% and ACZ/Ni 20 wt% was obtained as 7.2 and $10molm^{-2}s^{-1}$ at RT, respectively. These values of the corresponding membranes were slightly increased with increasing pressures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.50.1-50.1
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• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of Soil and Groundwater Environment
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• v.13 no.3
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• pp.21-26
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• 2008

Nitrate adsorption from aqueous solutions onto zinc chloride ($ZnCl_2$) treated coconut Granular Activated Carbon (GAC) was studied in a batch mode at two different initial nitrate concentrations (25 and 50 mg/L). The rate of nitrate uptake on prepared media was fast in the beginning, and 50% of adsorption was occurred within 10 min. The adsorption equilibrium was achieved within one hour. The mechanism of adsorption of nitrate on $ZnCl_2$ treated coconut GAC was investigated using four simplified kinetic models : the rate parameters were calculated for each model. The kinetic analysis indicated that pseudo-second-order kinetic with pore-diffusion-controlled was the best correlation of the experimental kinetic data in the present adsorption study.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.2
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• pp.155-160
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• 2008

In this study, the nitrate removal efficiency was examined under a variety of operating conditions, such as different doses of the reducing agent, different electrode types, different HRTs(hydraulic retention times), and different current densities, using the multistep electrochemical process. The nitrate removal efficiency increased and the input energy decreased when the reducing agent was used, and almost no difference was found between the electrode types in terms of their nitrate removal efficiency and current efficiency. So that the Zn reducing agent could be recovered, though, the B-type electrode was chosen(step 1: Pt-Zn; step 2: Pt-Zn; step 3: Pt-Zn; step 4: Pt-Zn). HRT experiments were carried out on constant electric current density unrelated HRTs and various electric current density related HRTs: the constant amount of electric current per unit volume. As a result, HRT and the electric current density caused concentration polarization and the lack of an applied current. That is to say,the lower the HRT, the greater the decrease in concentration polarization and in the amount of applied current per unit volume. Therefore, optimal conditions were found through the experiments that were conducted on HRT and electric current density. When a spacer was installed in the process, the nitrate removal efficiency and energy efficiency increased even more because the diffusion likewise increased.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.135-138
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• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.79-79
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• 2015

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.59.2-59.2
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• 2008