• Electrical & Electronic Materials
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• v.10 no.5
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• pp.473-480
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• 1997

Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper Zinc borosilicate glass and Lead borosilicate glass were prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium has been investigated. Their physical properties were compared using DTA, SEM, XRD, as a function of firing temperature, I can get the fine films of 22${\mu}{\textrm}{m}$ thickness with Lead borosilicate glass under 300 volts applied, 3 minutes and $700^{\circ}C$ firing temperature. Also I can get the fine films of 17${\mu}{\textrm}{m}$ thickness with Zinc borosilicate glass under same conditions. As a result of investigation of glass films from which glass layer was removed by placing it in HCl, it has been found that pre-firing and annealing play an important role to achieve uniform and fine glass deposition films. And also it was found that relative dielectric constant is independence of frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.314-314
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• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.292-293
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• 2006

$ZnNb_2O_6$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 10~30 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the dielectric properties significantly due to the formation of an excessive liquid and second phases. The sintered $ZnNb_2O_6$ ceramics at $900^{\circ}C$ with 25 wt% ZBS glass demonstrated 15.8 in dielectric constant(${\varepsilon}_r$), 5,400 in quality factor($Q{\times}f_0$), and $-98\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.371-374
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• 2004

저온동시 소성용(low temperature co-fired ceramics, LTCC) 마이크로파 유전체을 만들기 위해 $Ca(Li_{1/4}Nb_{3/4})O_3$ 마이크로파 유전체 세라믹스에 zinc-borosililcate glass를 첨가하여 소결 특성과 마이크로파 유전 특성을 조사하였다. $Ca(Li_{1/4}Nb_{3/4})O_3$과 $0.7Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$에 zinc-borosilicate를 $5{\sim}30wt%$ 첨가하여 소결한 결과 $875{\sim}925^{\circ}C$에서 동시 소성이 가능한 것으로 확인되었으며 zinc-borosilicate glass의 함량이 증가할수록 저온에서 소성이 가능하였지만 과량의 액상과 2차상이 형성되면서 유전율과 품질계수가 저하되는 경향을 나타내었다. $Ca(Li_{1/4}Nb_{3/4})O_3$에 5wt%의 zinc-borosilicate를 첨가하여 $900^{\circ}C$에서 소성한 결과 가장 우수한 유전 특성$(\epsilon_r=17.45,\;Q{\times}f_0=5487)$을 나타내었고, 유전율을 높이기 위해 $CaTiO_3$를 0.3mol% 첨가한 $0.7Ca(Li_{1/4}Nb_{3/4})O_3-0.3CaTiO_3$에 10wt%의 zinc-borosilicate를 첨가하여 $925^{\circ}C$에서 소성한 결과 가장 우수한 유전특성$(\epsilon_r=44.92,\;Q{\times}f_0=5567)$을 나타내었다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.386-392
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• 1996

Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1072-1074
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• 1995

Zinc-Borosilicate is used as a side insulastor wall to make high breakdown voltage with one Field Limiting Ring in a p-n junction. It is known that surface charge can be yield at the interface of Zinc-Borosilicate Glass/Silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage improved more than 660V without using more FLR.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.349-354
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• 1984

The purpose of present study is to find the structure crystallization mechanism and physical properties in $TiO_2$ containing lead zinc borosilicate glass system. The experiments such as differential thermal analysis infrared spectral analysis. X-ray diffraction analysis and thermal expansion measurements have been done. Differential thermal analysis of coarse and fine glass powder showed bulk nucleating mechanism for high $TiO_2$ containing glasses and surface nucleation mechanism for low $TiO_2$ containing glasses. The prepared glasses crystallized to crystalline mixture of PbO.2ZnO. $B_2O_3$ .4PbO.2ZnO.$5B_2O_3$and 2PbO.ZnO.$B_2O_3$ when heat-treated in the range of 480 and 51$0^{\circ}C$ and crystallized to PbTiO3 when heat-treated at $600^{\circ}C$. Obtained crystalline phase of $PbTiO_3$ in glass matrix strongly affects to thermal expansion coefficient and the value of crystallized glass varied 68.0 to $107.1{\times}10-7$/$^{\circ}C$ depending on the amount of $TiO_2$added. Infrared spectral analysis showed that [$BO_3$] triangle and [$BO_3$] tetrahedral units were coexisted in the glass with high content of PbO.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.609-614
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• 2009

The low-temperature preparation of porous ceramics was carried out using mixtures of alumina-zinc borosilicate (ZBS) glass. The compositions of alumina-ZBS glass mixture with PMMA pore-former were unfortunately densified. Because PMMA was evaporated below the softening point of ZBS glass ($588{^{\circ}C}$), the densification through the pore-filling caused by the capillary force might occur. Howerver, those with carbon possessed pores where carbon was evaporated above the softening point. The porous ceramic having 35% porosity was successively fabricated by the low-temperature sintering process below $900{^{\circ}C}$ using 45 vol% of alumina, 45 vol% ZBS of glass, and 10 vol% of carbon as starting materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.524-530
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• 2006

$xCa(Li_{1/4}Nb_{3/4})O_{3}-(1-x)CaTiO_{3}$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to low-temperature co-fired ceramic(LTCC) technology. The addition of $5{\sim}15wt%$ ZBS glass ensured successful sintering below $900\;^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the quality factor($Q{\times}f_{0}$) significantly due to the formation of an excessive liquid and second phases. As for the addition of $CaTiO_3$, the dielectric constant(${\epsilon}_r$) and temperature coefficient of resonant frequency(${\tau}_f$) increased, while the quality factor($Q{\times}f_{0}$) did not show an apparent change. The sintered $0.9Ca(Li_{1/4}Nb_{3/4})O_{3}-0.1CaTiO_{3}$ specimen at $900\;^{\circ}C$ with 10 wt% ZBS glass demonstrated 39.6 in dielectric constant(${\epsilon}_r$), 4,400 in quality factor$(Q{\times}f_{0}),\;and\;-11ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.729-731
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• 1998

Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper, Zinc borosilicate glass was prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium and a measurement technique of C-V curve has been investigated. Properties were compared using SEM, XRD, C-V Curve as a function of firing condition, temperature and atmosphere were investigated. Under 100V applied, 1 minute, $700^{\circ}C$ firing temperature, and $O_2$ atmosphere, I can get the fine films $5.8{\mu}m$ thickness with Zinc borosilicate glass. As a result of investigation of glass films, it has been found that pre-firing and annealing play an important role to achieve uniform, fine, reliable glass deposition films and Glass/Silicon interlace.