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Roles of Non-cholinergic Intrapancreatic Nerves, Serotonergic Nerves, on Pancreatic Exocrine Secretion in the Isolated Perfused Rat Pancreas

  • Jiang, Zheng Er;Shin, Bich-Na;Kim, In-Hye;Lee, Hyun-Joo;Yong, Jun-Hwan;Lee, Min-Jae;Won, Moo-Ho;Lee, Yun-Lyul
    • The Korean Journal of Physiology and Pharmacology
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    • v.15 no.5
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    • pp.307-312
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    • 2011
  • It has been rereported that axons which display 5-hydroxytryptamine (5-HT) immunoreactivity are abundant in the pancreas and the majority of serotonergic axons terminate within intrapancreatic ganglia, islet and acini. This histological result strongly suggests that intrapancreatic serotonergic nerves could affect to the pancreatic endocrine and exocrine secretion. Thus, this study was aimed to investigate whether intrapancreatic serotonergic nerves could affect pancreatic exocrine secretion and an action mechanism of the intrapancreatic serotonergic nerves. The rats were anesthetized with a single injection of urethane. The median line and the abdominal aorta was carefully dissected and cannulated with PE-50 tubing just above the celiac artery, and then tightly ligated just below the superior mesenteric artery. The pancreatic duct was also cannulated with Tygon microbore tubing. With the addition of serotonin, pancreatic volume flow and amylase output were significantly inhibited electrical field stimulation (EFS). On the other hand, pancreatic volume flow and amylase output were significantly elevated in EFS with the addition of spiperone. EFS application, however, pancreatic volume flow and amylase output had no significant change in cholecystokinin (CCK) alone when serotonin was applied under a 5.6 mM glucose background. Pancreatic volume flow and amylase output under 18 mM glucose background were significantly elevated in CCK plus serotonin than in CCK alone. These data suggest that intrapancreatic serotonergic nerves play an inhibitory role in pancreatic exocrine secretion and an important role in the insulin action or release.

Design and Implementation of a Universal System Control Strategy Applicable to VSC-HVDC Systems

  • Zhao, Yue;Shi, Li-bao;Ni, Yi-xin;Xu, Zheng;Yao, Liang-zhong
    • Journal of Power Electronics
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    • v.18 no.1
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    • pp.225-233
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    • 2018
  • This paper proposes a universal system control strategy for voltage source converter (VSC) based high voltage direct current (HVDC) systems. The framework of the designed control strategy consists of five layer structures considering the topology and control characteristics of the VSC-HVDC system. The control commands sent from the topmost layer can be transmitted to the next layer based on the existing communication system. When the commands are sent to each substation, the following transmission of commands between the four lower layers are realized using the internal communication system while ignoring the communication delay. This hierarchical control strategy can be easily applied to any VSC-HVDC system with any topology. Furthermore, an integrated controller for each converter is designed and implemented considering all of the possible operating states. The modular-designed integrated controller makes it quite easy to extend its operating states if necessary, and it is available for any kind of VSC. A detailed model of a VSC-HVDC system containing a DC hub is built in the PSCAD/EMTDC environment. Simulation results based on three operating conditions (the start-up process, the voltage margin control method and the master-slave control method) demonstrate the flexibility and validity of the proposed control strategy.

Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT

  • Wang, Chong;Wel, Xiao-Xiao;Zhao, Meng-Di;He, Yun-Long;Zheng, Xue-Feng;Mao, Wei;Ma, Xiao-Hua;Zhang, Jin-Cheng;Hao, Yue
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.3
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    • pp.125-128
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    • 2017
  • This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.

Bonding Strength of Conductive Inner-Electrode Layers in Piezoelectric Multilayer Ceramics

  • Wang, Yiping;Yang, Ying;Zheng, Bingjin;Chen, Jing;Yao, Jinyi;Sheng, Yun
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.4
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    • pp.181-184
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    • 2017
  • Multilayer ceramics in which piezoelectric layers of $0.90Pb(Zr_{0.48}Ti_{0.52})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.05Pb(Zn_{1/3}Nb_{2/3})O_3$ (0.90PZT-0.05PMS-0.05PZN) stack alternately with silver electrode layers were prepared by an advanced low-temperature co-fired ceramic (LTCC) method. The electrical properties and bonding strength of the multilayers were associated with the interface morphologies between the piezoelectric and silver-electrode layers. Usually, the inner silver electrodes are fabricated by sintering silver paste in multi-layer stacks. To improve the interface bonding strength, piezoelectric powders of 0.90PZT-0.05PMS-0.05PZN with an average particle size of $23{\mu}m$ were added to silver paste to form a gradient interface. SEM observation indicated clear interfaces in multilayer ceramics without powder addition. With the increase of piezoelectric powder addition in the silver paste, gradient interfaces were successfully obtained. The multilayer ceramics with gradient interfaces present greater bonding strength as well as excellent piezoelectric properties for 30~40 wt% of added powder. On the other hand, over addition greatly increased the resistance of the inner silver electrodes, leading to a piezoelectric behavior like that of bulk ceramics in multilayers.

Compensating algorithm for a measurement type CT considering hysteresis characteristic of the core (히스테리시스 특성을 고려한 측정용 변류기 보상 알고리즘)

  • Kang, Yong-Cheol;Zheng, Taiying;Lee, Byung-Eun;So, Soon-Hong;Lee, Hyun-Woong;Lee, Mi-Sun;Park, Jung-Ho;Choi, Hyun-Tae;Jang, Sung-Il;Kim, Yong-Gyun
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.44-45
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    • 2007
  • This paper deals with error compensation in current transformers. Since the exciting current can be considered as the main error source, its evaluation can allow the compensation of its detrimental effects to be obtained. The exciting current required by the transformer in every king of steady state operation can be determined by simply acquiring the secondary current, provided that the examined CT has been preliminarily identified. This paper also proposed a new approach to the model of the exciting branch. The exciting branch can be divided into a non-linear core loss resistor, and a non-linear magnetizing inductor whose flux and current characteristic is not the same as the characteristic shown by the joined tips of the first quadrant of a family of hysteresis loops. The performance of the proposed algorithm was validated under various conditions using EMTP generated data. Test result show, in all cases an improvement in primary current reproduction accuracy, compared with that achieved using CT's ratio.

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MICROSTRUCTURE AND TRIBOLOGY OF $TiB_2$ AND $TiB_2$-TiN DOUBLE-LAYER COATINGS

  • Yang, Yunjie;Chen, Lizhi;Zheng, Zhihong;Wang, Xi;Liu, Xianghuai
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.40-48
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    • 1995
  • $TiB_2$-TiN double-layer coating have been prepared by ion beam enhanced deposition. AES, XRD, TEM and HRTEM were employed to characterize the $TiB_2$ layer. The microhardness of the coatings was evaluated by an ultra low-load microhardness indenter system, and the tribological behavior was examined by a ball-on-disc tribology wear tester. It was found that in a single titanium diboride layer, the composition is uniform along the depth of the film, and it is mainly composed of nanocrystalline $TiB_2$ with hexagonal structure, which resulted from the ion bombardment during the film growth. The hardness of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of 39 Gpa at ion energy of 85 keV. The tribological property of the TiB2 films is also improved by higher energy of 85keV. The tribological property of the $TiB_2$ films is also improved by higher energy ion beam bombardment. There is no major disparity in the mechanical properties of double-layer $TiB_2$/TiN coatings and TiN/$TiB_2$ coatings. Both show an improved wear resistance compared with single-layer $TiB_2$ films. The adhesion of double-layer coatings is also superior to that of single-layer films.

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Traditional Chinese Medicine in the Treatment of Mental Retardation;A Review Study (정신지체에 대한 한의학 치료와 연구 동향;2003-2007년 중국 임상 논문에서)

  • Im, Jeong-Gyun;Kim, Lak-Hyung
    • The Journal of Pediatrics of Korean Medicine
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    • v.22 no.1
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    • pp.13-24
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    • 2008
  • Objectives This study was designed to analyze the clinical studies on Mental retardation(MR) in traditional Chinese medicine(TCM). Methods For this study, we searched the clinical studies on MR, which had been published from 2003 to 2007, through web site CNKI(中國知識基礎設施工 http://www.cnki.net). There were 17 clinical studies and we focused on those studies. Results 1. In those Chinese studies, they used following words to describe Mental retardation; 小人弱智($xi\check{a}o\acute{e}rru\grave{o}zh\grave{i}$), 智能發育不全($zh\grave{i}n\acute{e}ngf\bar{a}y\grave{u}buqu\acute{a}n$), 智力低下($zh\grave{i}l\grave{i}d\bar{i}xi\grave{a}$), 精神發育遲滯($j\bar{i}ngsh\acute{e}f\bar{a}y\grave{u}ch\acute{i}zh\grave{i}$), 智能落后($zh\grave{i}n\acute{e}nglu\grave{o}h\grave{o}u$), 智能落后($zh\grave{i}n\acute{e}ngch\acute{i}hu\check{a}n$), 失天愚型患人($xi\bar{a}nti\bar{a}ny\acute{u}x\acute{i}nghu\grave{a}n'\acute{e}r$). 2. There were many kinds of TCM treatment methods for MR, such as herbal medicine, acupuncture, electroacupunture, acupoint injection, Chuna therapy, and special education. And those TCM treatments methods showed higher efficacies in the treatment of MR compared with Western medicine. 3. Mental retardation was related with the deficiency of heart, kidney, liver, spleen(心虛, 腎虛, 肝虛, 脾虛) and the pathological mechanism of Phlegm(絹) and Blood stasis(慫沂)in the studies about the Bian Zheng-the types of differential diagnosis- of MR. 4. Most of studies used Intelligence Quotient(IQ) to assess the efficacy of TCM treatment of MR. And the duration of treatment, the degree of illness, the age of patient, and the cause of illness affected the prognosis of MR. Conclusions These results suggest that traditional medicine could be one of the useful treatments on MR. And these results could be used in the clinical practices and studies on MR in Korea.

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Effects of Aqueous Extract of Schizandra Chinensis Fruit on Cadmium-Induced Change of Monoamine Neurotransmitters in Rats

  • Zhao, Zheng Lin;Zhao, Guang Wen;Li, Li;Li, Meng Quan;Guan, Li Xin;Yang, Xu Dong;Li, Hou Zhong;Lin, Feng;Lee, Jong-Rok;Zhao, Rong Jie
    • Toxicological Research
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    • v.25 no.1
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    • pp.17-21
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    • 2009
  • The effects of aqueous extract of Schizandra Chinensis Fruit (AESC) on cadmium-induced changes of monoamine neurotransmitters in the different brain regions of adult rats were investigated. Male rats were received intraperitoneal (i.p.) administration of CdCl2 (0.6 mg/kg/d) for 21 days and sacrificed 7 days after the last administration. Concentrations of norepinephrine (NE), dopamine (DA) in striatum and serotonin (5-HT), 5-hydroxyindole acetic acid (5-HIAA) in cortex were measured by HPLC. There were significant decreases of NE, DA, 5-HT and 5-HIAA in Cd intoxicated rats (P < 0.05), while pretreatment with AESC (20 mg/kg/d or 60 mg/kg/d, p.o., 30 min before $CdCl_2$) greatly inhibited the decrease of monoamine transmitters, respectively (P < 0.05). Also, AESC significantly increased the reduction of glutathione contents and superoxide dismutase activities in cortex induced by $CdCl_2$. These results suggest that AESC ameliorates Cd-induced depletion of monoamine neurotransmitters in brain through its antioxidant activity.

Molecular Signature That Determines the Acute Tolerance of G Protein-Coupled Receptors

  • Min, Chengchun;Zhang, Xiaohan;Zheng, Mei;Sun, Ningning;Acharya, Srijan;Zhang, Xiaowei;Kim, Kyeong-Man
    • Biomolecules & Therapeutics
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    • v.25 no.3
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    • pp.239-248
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    • 2017
  • Desensitization and acute tolerance are terms used to describe the attenuation of receptor responsiveness by prolonged or intermittent exposure to an agonist. Unlike desensitization of G protein-coupled receptors (GPCRs), which is commonly explained by steric hindrance caused by the ${\beta}$-arrestins that are translocated to the activated receptors, molecular mechanisms involved in the acute tolerance of GPCRs remain unclear. Our studies with several GPCRs and related mutants showed that the acute tolerance of GPCRs could occur independently of agonist-induced ${\beta}$-arrestin translocation. A series of co-immunoprecipitation experiments revealed a correlation between receptor tolerance and interactions among receptors, ${\beta}$-arrestin2, and $G{\beta}{\gamma}$. $G{\beta}{\gamma}$ displayed a stable interaction with receptors and ${\beta}$-arrestin2 in cells expressing GPCRs that were prone to undergo tolerance compared to the GPCRs that were resistant to acute tolerance. Strengthening the interaction between $G{\beta}{\gamma}$ and ${\beta}$-arrestin rendered the GPCRs to acquire the tendency of acute tolerance. Overall, stable interaction between the receptor and $G{\beta}{\gamma}$ complex is required for the formation of a complex with ${\beta}$-arrestin, and determines the potential of a particular GPCR to undergo acute tolerance. Rather than turning off the signal, ${\beta}$-arrestins seem to contribute on continuous signaling when they are in the context of complex with receptor and $G{\beta}{\gamma}$.

ZNF435, a Novel Human SCAN-containing Zinc Finger Protein, Inhibits AP-1-mediated Transcriptional Activation

  • Gu, Xing;Zheng, Mei;Fei, Xiangwei;Yang, Zhenxing;Li, Fan;Ji, Chaoneng;Xie, Yi;Mao, Yumin
    • Molecules and Cells
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    • v.23 no.3
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    • pp.316-322
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    • 2007
  • Zinc finger transcription factor genes are a significant fraction of the genes in the vertebrate genome. Here we report the isolation and characterization of a human zinc finger-containing gene, ZNF435, from a fetal brain cDNA library. ZNF435 cDNA is 1290 base pairs in length and contains an open reading frame encoding 349 amino acids with four C2H2-type zinc fingers at its carboxyl terminus and a SCAN motif at its amino terminus. RT-PCR results showed that ZNF435 was expressed in all tested tissues. A ZNF435-GFP fusion protein was located in the nucleus and the four zinc fingers acted as nuclear localization signals (NLSs). ZNF435 was found to be capable of homo-association, and this effect was independent of its zinc fingers. Furthermore, ZNF435 proved to be a transcription repressor as its overexpression in AD293 cells inhibited the transcriptional activities of AP-1.