• Transactions on Electrical and Electronic Materials
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• 제8권5호
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• pp.201-205
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• 2007

Low temperature sintering behavior and microwave dielectric properties of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}zinc$ borosilicate glass(ZBS) systems were investigated with a view to applying the composition to LTCC technology. The addition of $10{\sim}30$ wt% ZBS in both systems ensured successful sintering below $900^{\circ}C$. For the $BiNbO_{4^-}ZBS$ system, the sintering was completed when 15 wt% ZBS was added whereas 25 wt% ZBS was necessary for the $ZnNb_2O_{6^-}zinc$ system. Secondary phase was not observed in the $BiNbO_{4^-}ZBS$ system but a small amount of $ZnNb_2O_6$ with the willemite structure as the secondary phase was observed in the $ZnNb_2O_{6^-}ZBS$ system. In terms of dielectric properties, the application of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}ZBS$ systems sintered at $900^{\circ}C$ to LTCC were shown to be appropriate; $BiNbO_{4^-}15$ wt% ZBS($\varepsilon_r=25,\;Q{\times}f\;value=3,700GHz,\;\tau_f=-32ppm/^{\circ}C$) and $ZnNb_2O_{6^-}25$ wt% ZBS($\varepsilon_r=15.8,\;Q{\times}f\;value=5,400GHz,\;\tau_f=-98ppm/^{\circ}C$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.279-279
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• 2007

Synthesis and dielectric properties of glass-ceramic composites with zinc borosilicate glass(here after ZBS glass) were investigated as functions of $ZnAl_2O_4$ phase synthesis method, glass addition (50~60 vol%) and sintering temperature ($600{\sim}950^{\circ}C$ for 2 hrs). The 50 vol% ZBS glass-$Al_2O_3$ and 60 vol% ZBS glass-$ZnAl_2O_4$ ensured successful sintering below $900^{\circ}C$. But the composition of 100-x-y vol% ZBS glass-x vol% $Al_2O_3-y$ vol% ZnO exhibited poor sinterability below $900^{\circ}C$ and the swelling phenomenon occurred in this composite with the large amount of ZBS glass. The sintering behavior of Glass-ceramic composites was affected by the crystallization of $ZnAl_2O_4$ which was formed by the reaction between ZBS glass and $Al_2O_3$. Dielectric constant (${\varepsilon}_r$), $Q{\times}f$ value and temperature coefficient of resonant frequency (${\tau}_f$) of the composite with 50 and 60 vol% ZBS glass contents demonstrated $ZBS-Al_2O_3({\varepsilon}_r=5.7)$, $ZBS-ZnAl_2O_4({\varepsilon}_r=5.8)$ which is applicable to substrate requiring an low dielectric properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.185-186
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• 2005

저온소결 Glass/Ceramic계 기판재료 조성으로 $Al_2O_3$, $SiO_2$, Cordierite, $Al_2O_3{\cdot}3SiO_2$의 4가지 filler에 zinc-borosilicate(ZBS) glass를 첨가하여 기판재료로의 사용가능성을 조사하였다. 4가지 filer에 ZBS glass를 30$\sim$50vol%첨가하여 $700\sim950^{\circ}C$에서 2시간 소결한 결과 40, 50vol%첨가 했을 때 900$^{\circ}C$에서 치밀한 소결체를 얻을 수 있었다. LSI칩 신호라인의 빠른 신호전달에 직접적인 영향을 주는 유전율은 기존의 $Al_2O_3$기관($\fallingdotseq$9.7)보다 저유전율 ($900^{\circ}C$에서 $Al_2O_3$-50vol%ZBS 5.7, $SiO_2$-50vol%ZBS 5.9, Cordierite-40vo1%ZBS 5.9, $Al_2O_3${\cdot}3SiO_2$-50vol%ZBS 4.9)을 나타내어 저온소결 기판재료로 사용이 가능함을 확인하였다.

• 한국세라믹학회지
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• 제46권6호
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• pp.609-614
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• 2009

The low-temperature preparation of porous ceramics was carried out using mixtures of alumina-zinc borosilicate (ZBS) glass. The compositions of alumina-ZBS glass mixture with PMMA pore-former were unfortunately densified. Because PMMA was evaporated below the softening point of ZBS glass ($588{^{\circ}C}$), the densification through the pore-filling caused by the capillary force might occur. Howerver, those with carbon possessed pores where carbon was evaporated above the softening point. The porous ceramic having 35% porosity was successively fabricated by the low-temperature sintering process below $900{^{\circ}C}$ using 45 vol% of alumina, 45 vol% ZBS of glass, and 10 vol% of carbon as starting materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.292-293
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• 2006

$ZnNb_2O_6$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 10~30 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the dielectric properties significantly due to the formation of an excessive liquid and second phases. The sintered $ZnNb_2O_6$ ceramics at $900^{\circ}C$ with 25 wt% ZBS glass demonstrated 15.8 in dielectric constant(${\varepsilon}_r$), 5,400 in quality factor($Q{\times}f_0$), and $-98\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.313-314
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• 2006

$BiNbO_4$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 5~20 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability and temperature coefficient of resonant frequency(${\tau}_f$), but it decreased the dielectric constant(${\varepsilon}_r$) and quality factor($Q{\times}f_0$) significantly due to the formation of an excessive liquid. The sintered $BiNbO_4$ ceramics at $900^{\circ}C$ with 15 wt% ZBS glass demonstrated 25 in dielectric constant(${\varepsilon}_r$), 3,700 in quality factor($Q{\times}f_0$), and -32 $ppm/{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.208-209
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• 2006

Sinterability and microwave dielectric properties of the $Zr1-x(Zn_{1/3}Nb_{2/3})xTiO_4$(x=4, 6) system ceramics have been investigated as functions of zinc-borosilicate(ZBS) glass contents and amount of $Zn_{1/3}Nb_{2/3}O_2$ substitution with a view to applying the composition to LTCC technology. The addition of 25 wt% ZBS glass ensured successful sintering below $925^{\circ}C$. With increasing ZBS glass and $Zn_{1/3}Nb_{2/3}O_2$ contents increased dielectric constant and sinterability but addition ZBS glass decreased the quality factor significantly due to the formation of an excessive liquid and second phases. The sintered $Zr4(Zn_{1/3}Nb_{2/3})6TiO_4$ system ceramics at $925^{\circ}C$ with 25 wt% ZBS glass demonstrated 27.7 in dielectric constant (${\varepsilon}_r$), 3,850 m quality factor($Q{\times}f_0$), and +6 ppm/$^{\circ}C$ in temperature coefficient of resonant frequency($\tau_f$).

• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.524-530
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• 2006

$xCa(Li_{1/4}Nb_{3/4})O_{3}-(1-x)CaTiO_{3}$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to low-temperature co-fired ceramic(LTCC) technology. The addition of $5{\sim}15wt%$ ZBS glass ensured successful sintering below $900\;^{\circ}C$. In general, increased addition of ZBS glass increased sinterability but it decreased the quality factor($Q{\times}f_{0}$) significantly due to the formation of an excessive liquid and second phases. As for the addition of $CaTiO_3$, the dielectric constant(${\epsilon}_r$) and temperature coefficient of resonant frequency(${\tau}_f$) increased, while the quality factor($Q{\times}f_{0}$) did not show an apparent change. The sintered $0.9Ca(Li_{1/4}Nb_{3/4})O_{3}-0.1CaTiO_{3}$ specimen at $900\;^{\circ}C$ with 10 wt% ZBS glass demonstrated 39.6 in dielectric constant(${\epsilon}_r$), 4,400 in quality factor$(Q{\times}f_{0}),\;and\;-11ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).