• 방사성폐기물학회지
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• 제12권3호
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• pp.211-216
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• 2014

발전소 구조재료의 일반부식에서 기인된 부식생성물은 연료 표면에 침적되어 방사화되고, 다시 노외로 방출되어 계통 선량율을 증가시킨다. 본 연구에서는 방사화된 크러드의 생성과정에 대한 이해를 높이고자 연료 크러드의 비방사능 값과 노내 체류시간을 계산하였다. 노내 체류시간 계산시 모핵종이 조사기간 동안 지속적으로 일정한 양만큼 침적되는 것으로 가정하였다. 본 연구에 활용된 연료 크러드 시료는 한울1호기 17차 O/H시 fuel scraping을 통해 채취되었으며, 본 연구를 위해 원소성분 분석과 핵종 분석이 수행되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.211.2-211.2
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• 2015

In order to investigate the effect of front channel in DAL (dual active layer) TFT (thin film transistor), we successfully fabricated DAL TFT composed of ITZO and IGZO as active layer using the solution process. In this structure, ITZO and IGZO active layer were used as front and back channel, respectively. The front channel was changed from 0.05 to 0.2 M at fixed 0.3 M IGZO of back channel. When the mol concentration of front channel was increased, the threshold voltage (VTH) was increased from 2.0 to -11.9 V and off current also was increased from 10-12 to 10-11. This phenomenon is due to increasing the carrier concentration by increasing the volume of the front channel. The saturation mobility of DAL TFT with 0.05, 0.1, and 0.2 M ITZO were 0.45, 4.3, and $0.65cm2/V{\cdot}s$. Even though 0.2 M ITZO has higher carrier concentration than 0.05 and 0.1 M ITZO, the 0.1 M ITZO/0.3 M IGZO DAL TFT has the highest saturation mobility. This is due to channel defect such as pores and pin-holes. These defect sites were created during deposition process by solvent evaporation. Due to these defect sites, the 0.1 M ITZO/0.3 M IGZO DAL TFT shows the higher saturation mobility than that of DAL TFT with front channel of 0.2 M ITZO.

• 한국재료학회지
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• 제30권4호
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• pp.211-216
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• 2020

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30㎠/Vs) and large on/off ratio.

• 소성∙가공
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• 제27권4호
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• pp.211-221
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• 2018

To estimate the recycling feasibility of high melt-indexed polycarbonate, 3.5 inch LGP, tensile, flexural and impact specimens were injection-molded and the LGP was shredded into scraps. The scraps were injection-molded again and this process was repeated for 4 times. Properties of the sample, i.e., optical properties, mechanical properties and number average molecular weight were measured at each cycle. Based on the results, as the number of reprocessing increased, transmittance decreased at low wavelength and color coordinate was changed systematically to yellow. Yellow index increased more than twofold during 4 recycling processes. On the other hand, the number average molecular weight decreased during recycling processes. Flexural and impact strength showed no tendency according to the number of recycling, but tensile strength decreased sharply after the third recycling process. Based on these properties, it was concluded that the number of recycling for high melt-indexed polycarbonate allowed in this study was one.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Interaction and multiscale mechanics
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• 제6권2호
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• pp.211-235
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• 2013

An incompressible smoothed particle hydrodynamics (ISPH) method based on the incremental pressure projection method is developed in this study. The Rayleigh-B$\acute{e}$nard convection in a square enclosure is used as a validation case and the results obtained by the proposed ISPH model are compared to the benchmark solutions. The comparison shows that the established ISPH method has a good performance in terms of accuracy. Subsequently, the proposed ISPH method is employed to simulate natural convection from a heated cylinder in a square enclosure. It shows that the predictions obtained by the ISPH method are in good agreements with the results obtained by previous studies using alternative numerical methods. A rotating and heated cylinder is also considered to study the effect of the rotation on the heat transfer process in the enclosure space. The numerical results show that for a square enclosure at, the addition of kinetic energy in the form of rotation does not enhance the heat transfer process. The method is also applied to simulate forced convection from a circular cylinder in an unbounded uniform flow. In terms of results, it turns out that the proposed ISPH model is capable to simulate heat transfer problems with the complex and moving boundaries.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.211-220
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• 2014

In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.

• Structural Engineering and Mechanics
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• 제45권2호
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• pp.211-232
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• 2013

In this study a multi-objective optimization problem is solved. The objectives used here include simultaneous minimum construction cost in term of sections weight, minimum structural damage using a damage index, and minimum non-structural damage in term of inter-story drift under the applied ground motions. A high-speed and low-error neural network is trained and employed in the process of optimization to estimate the results of non-linear time history analysis. This approach can be utilized for all steel or concrete frame structures. In this study, the optimal design of a planar eccentric braced steel frame is performed with great detail, using the presented multi-objective algorithm with a discrete population and then a moment resisting frame is solved as a supplementary example.

• Structural Engineering and Mechanics
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• 제11권2호
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• pp.211-219
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• 2001

This paper presents the tangent stiffness method for 3-D geometrically nonlinear folding analysis of a reversal arch. Experimental tests are conducted to verify the numerical analysis. The tangent stiffness method can accurately evaluate the geometrical nonlinearity due to the element translating as a rigid body, and the method can exactly handle the large rotation of the element in space. The arch in the experiment is made from a thin flat bar, and it is found that the folding process of the arch may be captured exactly by the numerical analysis with a model consisting of only 18 elements with the same properties.

• 한국분말재료학회지
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• 제9권4호
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• pp.211-217
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• 2002

It is well known that the powder injection molding(PIM) process can overcome the shape limitations of traditional powder compaction, the costs of machining, the productivity limits of isostatic pressing and slip casting, and the defect and tolerance limitations of conventional casting. Increasing demands from industry for not only the dimensional accuracy nut mechanical strength in PIMed parts have had much effort focused on the investigation of mechanical properties of mechanical strength in PIMed parts have had much effort focused on the investigation of mechanical properties of sintered parts formed with high-strength metallic powders. The 17_4 PH $10\mu{m}$ were injection-molded into flat tensile specimens. Sintering of the compacts was carried out at the various temperatures ranging from 900 to $1350^{\circ}C$. Sintering behavior of the compacts and tensile properties of sintered specimens were investigated.