• Title/Summary/Keyword: Y-Junction

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A Study on 600 V Super Junction Power MOSFET Optimization and Characterization Using the Deep Trench Filling (Deep Trench Filling 기술을 적용한 600 V급 Super Junction Power MOSFET의 최적화 특성에 관한 연구)

  • Lee, Jung-Hoon;Jung, Eun-Sik;Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.4
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    • pp.270-275
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    • 2012
  • Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

Reduction of Heat Generation from Junction Box in 3 kW Photovoltaic Power Generation System

  • Yun, Jung-Hyun;Sun, Ki-Ju;Cheon, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.1
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    • pp.21-24
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    • 2016
  • A junction box used in a 3 kW photovoltaic power generation system plays a role in collecting and supplying the direct current voltage produced by photovoltaic modules to an inverter. It is also used for facilitating maintenance checks and protecting the module and inverter by keeping the voltage constant. As for the junction box, using it in a parallel connection creates a difference between the setup modules. In order to compensate, an inverse voltage diode is used. But the high-power created through the solar generator can be delivered to the inverter through the inverter regularly. Therefore, a component can break down due to excess heat. And consequently short circuits and electric leakage occurs. In this study, using a junction box that enabled the bypass of high electric power, it was possible to reduce heat generation by approximately 35℃ when compared to a standard junction box.

Developing of Super Junction MOSFET According to Charge Imbalance Effect (전하 불균형 효과를 고려한 Super Junction MOSFET 개발에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.10
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    • pp.613-617
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    • 2014
  • This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.

Employing Al Etch Stop Layer for Nb-based SNS Josephson Junction Fabrication Process (Al 식각정지층을 이용한 Nb-based SNS 조셉슨 접합의 제조공정)

  • Choi, J.S.;Park, J.H.;Song, W.;Chong, Y.
    • Progress in Superconductivity
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    • v.12 no.2
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    • pp.114-117
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    • 2011
  • We report our efforts on the development of Nb-based non-hysteretic Josephson junction fabrication process for quantu device applications. By adopting and modifying the existing Nb-aluminum oxide tunnel junction process, we develop a process for non-hysteretic Josephson junction circuits using metal-silicide as metallic barrier material. We use sputter deposition of Nb and $MoSi_2$, PECVD deposition of silicon oxide as insulator material, and ICP-RIE for metal and oxide etch. The advantage of the metal-silicide barrier in the Nb junction process is that it can be etched in $SF_6$ RIE together with Nb electrode. In order to define a junction area precisely and uniformly, end-point detection for the RIE process is critical. In this paper, we employed thin Al layer for the etch stop, and optimized the etch condition. We have successfully demonstrated that the etch stop properties of the inserted Al layer give a uniform etch profile and a precise thickness control of the base electrode in Nb trilayer junctions.

Deducing Isoform Abundance from Exon Junction Microarray

  • Kim Po-Ra;Oh S.-June;Lee Sang-Hyuk
    • Genomics & Informatics
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    • v.4 no.1
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    • pp.33-39
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    • 2006
  • Alternative splicing (AS) is an important mechanism of producing transcriptome diversity and microarray techniques are being used increasingly to monitor the splice variants. There exist three types of microarrays interrogating AS events-junction, exon, and tiling arrays. Junction probes have the advantage of monitoring the splice site directly. Johnson et al., performed a genome-wide survey of human alternative pre-mRNA splicing with exon junction microarrays (Science 302:2141-2144, 2003), which monitored splicing at every known exon-exon junctions for more than 10,000 multi-exon human genes in 52 tissues and cell lines. Here, we describe an algorithm to deduce the relative concentration of isoforms from the junction array data. Non-negative Matrix Factorization (NMF) is applied to obtain the transcript structure inferred from the expression data. Then we choose the transcript models consistent with the ECgene model of alternative splicing which is based on mRNA and EST alignment. The probe-transcript matrix is constructed using the NMF-consistent ECgene transcripts, and the isoform abundance is deduced from the non-negative least squares (NNLS) fitting of experimental data. Our method can be easily extended to other types of microarrays with exon or junction probes.

A Study on the Self-Aligned Cobalt Silicidation and the Formation of a Shallow Junction by Concurrent Junction Process (동시 접합 공정에 의한 자기정렬 코발트 실리사이트 및 얇은 접합 형성에 관한 연구)

  • 이석운;민경익;주승기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.2
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    • pp.68-76
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    • 1992
  • Concurrent Junction process (simultaneous formation of a silicide and a junction on the implanted substrate) by Rapid Thermal Annealig has been investigated. Electrical and material properties of CoSi$_2$ films were analyzed with Alpha Step, 4-point probe, X-ray diffraction(XRD) and Scanning Electron Microscope(SEM). And CoSi$_2$ junctions were examined with Spreading Resistance probe in order to see the redistribution of electrically activated dopants and determined the junction depth. Two step annealing process, which was 80$0^{\circ}C$ for 30sec and 100$0^{\circ}C$ for 30sec in NS12T ambient was employed to form CoSi$_2$ and shallow junctions. Resistivity of CoSi$_2$ was turned out to be 11-15${\mu}$cm and shallow junctions less than 0.1$\mu$m were successfully formed by the process. It was found that the dopant concentration at CoSi$_2$/Si interface increased as decreasing the thickness of Co films in case of $p^{+}/n$ and $n^{+}/p$ junctions while the junction depth decreased as increasing CoSiS12T thickness in case of $p^{+}/n$ junction.

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Direct Printable Nanowire p-n Junction device

  • Lee, Tae-Il;Choi, Won-Jin;Kar, Jyoti Prakash;Moon, Kyung-Ju;Lee, Min-Jung;Jun, Joo-Hee;Baik, Hong-Koo;Myoung, Jae-Min
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.30.2-30.2
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    • 2010
  • Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

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A Study on Effect of the Junction's Eccentricity for Buckling Characteristics of Single-Layer Latticed Dome (접합부 편심을 고려한 단층 래티스돔의 좌굴특성에 관한 연구)

  • Park, Sang-Hoon;Suk, Chang-Mok;Jung, Hwan-Mok;Kwon, Young-Hwan
    • Journal of Korean Association for Spatial Structures
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    • v.1 no.1 s.1
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    • pp.117-124
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    • 2001
  • In Single-layer latticed domes with rectangular network which is composed of ring of circumferential direction and rafter of longitudinal direction, that is, rib domes, if we use the cross-membered junction's method for the advantage in fabrication and construction, the eccentricity is occurred in the nodal point of crossing members. This paper is aimed at investigating the buckling characteristics for the effect of eccentricity according to rise-span ratios and distance of eccentricity. Analysis method is based on FEM dealing with the geometrically nonlinear deflection problems. The conclusion were given as follows: 1. The maximum decreasing ratio of buckling strength due to the junction's eccentricity is about 60% in models of this paper. 2. In the increasing ratio of buckling strength for rise-span ratio, that of Type 3 models is larger than that of type 2 models. On the other hand, that of Type 2 mode is larger than that of Type 3 for eccentricity-distance. 3. In the viewpoint of the value of buckling strength, that of Type 2 models is larger than that of type 3 models. The effect of the junction's rigidity on buckling strength is not great for overall models. Therefore if we use the cross-membered junction's method for the advantage in fabrication and construction, the method of Type 2 will have the great advantage of that of Type 3.

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A Study on the Correlation between Thoracolumbar Junction and Back-su points(背兪穴), Hwatahyeopcheok points(華他夾脊穴) for Treatment of Low Back Pain (요통 치료를 위한 흉요추 이행부 (Thoracolumbar Junction) 와 배유혈(背兪穴), 화타협척혈(華他夾脊穴)의 상관성 에 관한 연구)

  • Park, Young-Hoi;Keum, Dong-Ho;Kim, Dae-Feel
    • The Journal of Korea CHUNA Manual Medicine
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    • v.5 no.1
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    • pp.77-84
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    • 2004
  • Objectives : This study was designed to investigate the correlation between thoracolumbar junction and back-su points, Hwatahyeopcheok points for treatment of low back pain in the thoracolumbar junction syndrome that was suggested by Maigne R. Method : We Investigate the acupuncture points that was correlated with the location of thoracolumbar junction area. And We tried to find out a common point between thoracolumbar junction and back-su points, Hwatahyeopcheok points for treatment of low back pain. Results and Conclusion : 1. It is considered that these points such as $BL_{20}$, $BL_{21}$, $BL_{22}$, and Hwatahyeopcheok points that are located from 11th thoraic spinous process to 2nd lumbar spinous process are correspond to the thoracolumbar junction area. 2. It is suggested that acupuncture treatment on $BL_{20}$, $BL_{21}$, $BL_{22}$, and Hwatahyeopcheok points can release the tenderness of the muscles, recover autonomic nervous function and release smooth muscles and vascular contraction, so it can treat low back pain caused by thoracolumbar junction.

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Mechanism for Gating of Gap Junction Channel. (간극결합채널의 개폐기전)

  • 오승훈
    • Journal of Life Science
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    • v.14 no.5
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    • pp.882-890
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    • 2004
  • Gap junction is a membrane structure facilitating the direct transmission of several ions and small molecules between two cells. It is also called an 'intercellular channel' to distinguish it from other well-known cellular channels (e.g. sodium and potassium channels). Gap junction channels are not passive conduits, rather the ion channels modulated by several stimuli including pH, calcium ion, voltage, and a chemical modification (mainly known as phosphorylation). Among them, the effects of voltage on the gating of gap junction channels have been well studied. Gap junction channels are more sensitive to the transjunctional potential ($V_j$) between two cells rather than the membrane potential($V_m$) between inside and outside the cell. In this review, I will summarize the general properties of gap junction channel and discuss the gating mechanism for the gap channels.