Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Developing of Super Junction MOSFET According to Charge Imbalance Effect

전하 불균형 효과를 고려한 Super Junction MOSFET 개발에 관한 연구

  • Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
  • Received : 2014.07.24
  • Accepted : 2014.09.01
  • Published : 2014.10.01
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Abstract

This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.

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References

  1. E. G. Kang and M. Y. Sung, J. KIEEME, 15, 758 (2002).
  2. T. J. Nam, H. S. Chung, and E. G. Kang, J. KIEEME, 24, 713 (2011).
  3. M. A. Paul and D. J. Bates, Electronic Principles (McGraw-Hill College, 2006)
  4. E. Gates and L. Chartrand, Introduction to Electronics, 4ed. (Delmar, 2001)
  5. S. S. Kyoung, J. H. Seo, Y. H. Kim, J. S. Lee, E. G. Kang, and M. Y. Sung, J. KIEEME, 22, 12 (2009).
  6. H. S. Lee, E. G. Kang, A. R. Shin, H. H. Shin, and M. Y. Sung, KIEE, 7 (2006).
  7. W. H. Hayt Jr., Eng. Ineer. Ingelect. Romagnetics-7ed. (McGraw-Hill, 2005)