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0.25 ㎛ GaN HEMT 기술을 이용한 우수한 성능의 X-대역 전력 증폭기 (High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology)

  • 이복형;박병준;최선열;임병옥;고주석;김성찬
    • 전기전자학회논문지
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    • 제23권2호
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    • pp.425-430
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    • 2019
  • 본 논문에서는 게이트 길이가 $0.25{\mu}m$인 GaN HEMT 기술을 사용하여 개발된 X-대역 전력 증폭기의 특성을 기술한다. 개발된 X-대역 전력 증폭기는 9~10 GHz의 대역에서 22.7 dB 이상의 소신호 이득과 43.02 dBm(20.04 W) 이상의 포화 출력 전력을 가진다. 최대 포화 출력 전력은 9.5 GHz에서 43.84 dBm (24.21 W)이였다. 전력 부가 효율은 41.0~51.24%의 특성을 얻었으며 칩의 크기는 $3.7mm{\times}2.3mm$이다. 출력 전력 밀도는 $2.84W/mm^2$를 나타내었다. 개발된 GaN 전력 증폭기는 다양한 X-대역 레이더 응용에 적용 가능할 것으로 예상된다.

산소, 질소, 그리고 황 주개 원자의 몰리브덴(Ⅴ)-산소 착물 합성과 분광학적 및 전기화학적 성질 (Molybdenum(Ⅴ)-Oxo Complexes with Oxygen, Nitrogen and Sulfur Donors. Synthesis, Spectral and Electrochemical Properties)

  • 김희정;구본권
    • 대한화학회지
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    • 제39권6호
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    • pp.434-439
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    • 1995
  • 산소, 질소, 그리고 황 주개 원자의 이염기성 세자리 리간드로서 S-methyl-3(-2-hydroxy-x-phenyl)methylenedithiocarbazate($L^1:x=5-H$)와 그 유도체($L^2:x=5-CH_3,\;L^3:x=3CH_3O,\;L_4:x=5,6-C_4H_4\; 그리고\;x^5:ㅌ=5-NO_2$)의 6-배위 몰리브덴(V)-산소 착물, ($R_4N$)[MoO(NCS)_2L](R=CH_3,\;C_3H_5,\;n-C_4H_9)$들을 합성하고 원소분석, 몰 전도도, UV-Vis, IR, $1^H$ NMR 그리고 CV 등을 이용하여 착물의 구조와 분광학적 및 전기화학적 성질 등을 조사하였다.

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On Quasi-Baer and p.q.-Baer Modules

  • Basser, Muhittin;Harmanci, Abdullah
    • Kyungpook Mathematical Journal
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    • 제49권2호
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    • pp.255-263
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    • 2009
  • For an endomorphism ${\alpha}$ of R, in [1], a module $M_R$ is called ${\alpha}$-compatible if, for any $m{\in}M$ and $a{\in}R$, ma = 0 iff $m{\alpha}(a)$ = 0, which are a generalization of ${\alpha}$-reduced modules. We study on the relationship between the quasi-Baerness and p.q.-Baer property of a module MR and those of the polynomial extensions (including formal skew power series, skew Laurent polynomials and skew Laurent series). As a consequence we obtain a generalization of [2] and some results in [9]. In particular, we show: for an ${\alpha}$-compatible module $M_R$ (1) $M_R$ is p.q.-Baer module iff $M[x;{\alpha}]_{R[x;{\alpha}]}$ is p.q.-Baer module. (2) for an automorphism ${\alpha}$ of R, $M_R$ is p.q.-Baer module iff $M[x,x^{-1};{\alpha}]_{R[x,x^{-1};{\alpha}]}$ is p.q.-Baer module.

A NOTE ON WITT RINGS OF 2-FOLD FULL RINGS

  • Cho, In-Ho;Kim, Jae-Gyeom
    • 대한수학회보
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    • 제22권2호
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    • pp.121-126
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    • 1985
  • D.K. Harrison [5] has shown that if R and S are fields of characteristic different from 2, then two Witt rings W(R) and W(S) are isomorphic if and only if W(R)/I(R)$^{3}$ and W(S)/I(S)$^{3}$ are isomorphic where I(R) and I(S) denote the fundamental ideals of W(R) and W(S) respectively. In [1], J.K. Arason and A. Pfister proved a corresponding result when the characteristics of R and S are 2, and, in [9], K.I. Mandelberg proved the result when R and S are commutative semi-local rings having 2 a unit. In this paper, we prove the result when R and S are 2-fold full rings. Throughout this paper, unless otherwise specified, we assume that R is a commutative ring having 2 a unit. A quadratic space (V, B, .phi.) over R is a finitely generated projective R-module V with a symmetric bilinear mapping B: V*V.rarw.R which is nondegenerate (i.e., the natural mapping V.rarw.Ho $m_{R}$ (V, R) induced by B is an isomorphism), and with a quadratic mapping .phi.:V.rarw.R such that B(x,y)=(.phi.(x+y)-.phi.(x)-.phi.(y))/2 and .phi.(rx)= $r^{2}$.phi.(x) for all x, y in V and r in R. We denote the group of multiplicative units of R by U(R). If (V, B, .phi.) is a free rank n quadratic space over R with an orthogonal basis { $x_{1}$, .., $x_{n}$}, we will write < $a_{1}$,.., $a_{n}$> for (V, B, .phi.) where the $a_{i}$=.phi.( $x_{i}$) are in U(R), and denote the space by the table [ $a_{ij}$ ] where $a_{ij}$ =B( $x_{i}$, $x_{j}$). In the case n=2 and B( $x_{1}$, $x_{2}$)=1/2, we reserve the notation [ $a_{11}$, $a_{22}$] for the space.the space.e.e.e.

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SOL-GEL법을 이용한 $SrBi_2TaNbO_9$ 강유전성 박막 제조 및 특성 평가 (Fabrecation and Characterization of $SrBi_2TaNbO_9$ Ferroelectric Thin Film Prepared by Sol-Gel Method)

  • 이진한;박상준;장건익
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.94-98
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    • 2000
  • Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

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리튬2차전지용 양극 소재 $Li[Li_xMn_{1-x-y}Cr_y]O_2$의 합성 및 층상구조 연구 (Synthesis and Structure of the Layered Cathode Material $Li[Li_xMn_{1-x-y}Cr_y]O_2$ for Rechargeable Lithium Batteries)

  • 최진범;박종완;이승원
    • 한국광물학회지
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    • 제16권3호
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    • pp.223-232
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    • 2003
  • 리튬2차전지용 양극소재 개발을 위해 Li[L $i_{x}$M $n_{1-x-y}$C $r_{y}$ ] $O_2$를 공침법(co-p.ecipitation method)을 적용하여 각각 $650^{\circ}C$(CR650)와 8$50^{\circ}C$(CR850)에서 합성하였다. 리트벨트 구조분석 결과 계산의 정밀도를 나타내는 R 지수값을 보면 $R_{exp}$에 대한 $R_{wp}$값( $R_{wp}$/ $R_{exp}$)은 CR650과 CR850의 각각에 대해 19.2%/10.1%과 15.9%/9.76%를 보여주며, $R_{b}$값은 각각 10.9%와 8.54%, 그리고 S(GofF)값은 각각 1.9와 1.6으로 계산되었다. 합성된 양극소재는 공간군 R3m의 층상구조(LiMn $O_2$)가 존재하였으며, 전이금속 층 내의 Mn이 Li로 치환되면서(Li[L $i_{1}$3/M $n_{2}$3/] $O_2$) 단사구조(C2/c)의 거대격자(Superlattice) 구조현상도 관찰되었다. 계산된 단위포는 공간군 R3m, CR650이 a=2.8520(2)$\AA$, c=14.248(2)$\AA$, V=100.40(1)$\AA^3$이며, CR850은 a=2.8504(1)$\AA$, c=14.2371(7)$\AA$, V=100.179(8)$\AA^3$으로 각각 계산되었다. 또한 최종 결정된 화학식은 CR650은 Li[L $i_{0.35}$M $n_{0.56}$C $r_{0.09}$] $O_2$, CR850은 Li[L $i_{0.27}$M $n_{0.61}$C $r_{0.13}$] $O_2$으로 각각 구해졌다.다...다..구해졌다.다...다..

Weak Association of Random Variables, with Applications

  • Kim, Tae-Sung;Choi, Jeong-Yeol
    • 호남수학학술지
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    • 제9권1호
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    • pp.113-119
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    • 1987
  • Random variables $X_1$, $X_1$, ..., $X_m$ are said to be weakly associated if whenever $\pi$ is a permutation of {1, 2,..., m}, $1{\leq}k<m$, and f: $R^{k}{\rightarrow}R$, g: $R^{m-k}{\rightarrow}R$ are coordinatewise nondecreasing functions then Cov $[f(X_{x(1)},...,\;X_{\pi(k)},\;g(X_{x(k+1)},...,\;X_{x(m)})]{\geq}0$, whenever the covariance is defined. An infinite collection of random variables is weakly associated if every finite subcollection is weakly associated. The basic properties of weak association and central limit theorem for weakly associated random variables are derived. We also extend this idea to point random fields and prove that a Cox process with a stationary weakly associated intensity rardom measure is weakly associated. Another inequalities and the fact that positive correlated normal random variables are weakly associated are also proved.

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${La_{2-x}}{Sr_x}{Mo_{2-y}}{Cr_y}{O_{9-\delta}}$ 이온전도체의 전기전도도 (Electrical Conductivity of ${La_{2-x}}{Sr_x}{Mo_{2-y}}{Cr_y}{O_{9-\delta}}$Ionic Conductors)

  • 유광수;변덕영
    • 한국세라믹학회지
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    • 제38권8호
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    • pp.693-697
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    • 2001
  • 고상반응법으로 이론 밀도의 약 92%의 소결 밀도를 갖는 입방정계의 새로운 이온전도체 L $a_{2-x}$S $r_{x}$M $o_{2-y}$C $r_{y}$ $O_{9-{\delta}}$(x=0, 0.05, y=0, 0.1)를 제조하였다. 교류 복소임피던스는 3$50^{\circ}C$~90$0^{\circ}C$의 온도범위에서 공기중에서 측정하여, EQUIVCRT 모델링 소프트웨어로 해석하였다. 상 전이온도인 58$0^{\circ}C$ 전.후로 임피던스 스펙트럼에 큰 차이가 있었으며, 전기전도도는 L $a_2$M $o_2$ $O_{9}$ 시편의 경우 7$50^{\circ}C$에서 3$\times$$10^{-2}$ S$cm^{-1}$ /로 우수하였으며, 활성화 에너지는 고온 상 영역에서는 0.89 eV, 저온 상 영역에서는 1.12 eV이었다. 순수한 L $a_2$M $o_2$ $O_{9}$과 비교하여 Cr 치환효과는 크지 않았으나, Sr 치환 시에는 상 전이온도의 감소와 전기전도도의 증가 현상을 보였으며, 전이온도 부근에서의 전기전도도 변화 폭은 작았다.다.

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초파리집단의 유전학적 연구 2. X-선조사에 의한 상호 전좌 유발 빈도에 관하여 (The Genetic Studies of Drosophila Population 2. On the frequencies of reciprocal translocation in D. melanogaster irradiated with X-rays)

  • 강영선;이정수
    • 한국동물학회지
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    • 제8권2호
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    • pp.9-14
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    • 1965
  • The frequency of reicprocal translocation damage in males of D. melanogaster irradiated with X-rays was observed in this study. The frequencies were checked at four periods with two days intervals and duration spermatogenesis after irradiation. (1) Modification in the percentage of the reciprocal translocation damage were not obtained at interval after irradiated with 500r and 1500r of X-rays respectively. (2) In two experimental groups irradiated with 50-0r and 1500r of X-rays, the frequencies showing in the spermatogenesis were 0.50%(500r), 3.85%(1500r) in mature sperm, and 1.59%, 8.10% in the spermatocyte. (3) The frequency of reciprocal translocation between the Y and 3 rd chromosomes was the highest, but in accordance with dosage increase that of 2nd and 3rd chromosomes relatively increased from 9.34 % to 30.49% while decreased from 68.75% to 46.80% in the group of the Y and 3 rd chromosomes. (4) It was supposed that these modifications of the frequency were due to heavy damage of the 2nd chromosomes than other chromosomes in accordance with dosage increase. (5) Spontaneous reciprocal translocations involving the Y, 2nd and 3rd chormosomes was 0.23%.

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Cobalt(Ⅲ) Complexes of N,N'-Bis(2(S)-aminopropyl)-1(R),2(R)-trans-1,2-diaminocyclohexane

  • 이동일;전무진
    • Bulletin of the Korean Chemical Society
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    • 제17권9호
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    • pp.786-790
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    • 1996
  • A novel optically active tetraamine ligand possessing four asymmetric centers, N,N'-bis(2(S)-aminopropyl)-1(R),2(R)-trans-1,2-diaminocyclohexane (SRRS-apchxn) and its cobalt(Ⅲ) complexes, [Co(SRRS-apchxn)X2]n+ (X=Cl-, H2O, X2=CO32-) have been synthesized. This ligand has coordinated stereospecifically to the cobalt(Ⅲ) ion to give only the Λ-uns-cis-(SS) isomer. A trans dichloro complex has been obtained via the stereospecific isomerization of Λ-uns-cis-(SS)-[Co(SRRS-apchxn)Cl2]+ to trans-(SS)-[Co(SRRS-apchxn) Cl2]+ in CH3OH-HCl medium. Ligand and complexes have been characterized by electronic absorption, 1H NMR, CD spectra, and also by elemental analysis. It is of interest that this is one of the few CoⅢ(N4)X2 type complex preparations, which produces such an uns-cis isomer with stereospecificity.