• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• 한국재료학회지
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• 제10권9호
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• pp.607-611
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• 2000

고밀도 DRAM에서 박막 커패시터로의 적용을 위해 Zr이 첨가된 (Ba(sub)1-x, Sr(sub)x)TiO$_3$<원문차조> 박막이 r.f. magnetron sputter-ing 법에 의해 제조되었다. 증착된 박막들은 다결정질 구조를 보였으며 증착압력이 감소함에따라 Zr/Ti의 비가 현저히 증가하였으며 본 연구에서는 얻어진 박막들은 100kHz에서 380∼525의 유전상수값을 나타냈다. 전압에 따른 커패시턴스와 분극량의 변화는 이력특성을 크게 보이지 않아 상유전상으로 형성되었음을 보였다. 누설전류밀도는 증착압력이 감소함에 따라 작아지는 경향을 보였고 10mTorr이상에서 증착된 박막의 경우 200kV/cm의 전계에서 10(sup)-7∼10(sup)-8A/$\textrm{cm}^2$의 차수를 갖는 누설전류밀도를 보여 본 연구에서 제조된 (Ba(sub)1-x, Sr(sub)x)(Ti(sub)1-x, Zr(sub)x)O$_3$<원문참조>박막은 고밀도 DRAm을 위한 커패시터에의 적용가능성을 보였다.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.796-801
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• 2001

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the solid-state reaction method, and especially PZT(90/10) and PZT(10/90) powders were derived by the sol-gel method. All specimens showed a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increased in sintering temperature, the values for the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 14.4$\mu$m and 9.8$\mu$m, respectively. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247. 2.06%, respectively. The coercive field and the remanent polarization of x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 8.5kV/cm, 13$\mu$C/$\textrm{cm}^2$ and 17.2kV/cm, 28 $\mu$C/$\textrm{cm}^2$, respectively. The pyroelectric coefficient of the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 5.64$\times$10$^{-8}$ C/$\textrm{cm}^2$K and 2.76$\times$10$^{-8}$ C/$\textrm{cm}^2$K, respectively.

• East Asian mathematical journal
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• 제35권3호
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• pp.351-356
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• 2019

In this paper, we investigate Hyers-Ulam-Rassias stability of the general quartic functional equation f(5x + y) - 5f(4x + y) + 10f(3x + y) - 10f(2x + y) + 5f(x + y) - f(y) = 0.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.229-231
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• 1996

We are studied the stability of amorphous and crystalline $Te_{100-x}Ge_x$ (x=10, 15. 25, 40, 50, 60 at.%) thin films by observing the degradation in 8O%RH/$66^{\circ}C$ environment and the reflectance ratio. The degradation was observed with the transmittance and reflectance, the reflectance was measured at 780nm in the wavelength range of diode laser. In amorphous $Te_{100-x}Ge_x$ thin films of below x=4O at.%, the degradation was observed, the thin film of x=10 at.% was shown the degradation degree of 12.5%. In crystalline $Te_{100-x}Ge_x$ thin films of x=10, 40 at.%, the degradation degree were 12.8%, 13%, respectively. The reflectance ratio were shown above 20% in. all composition ratio. Therefore, we are expected that $Te_{100-x}Ge_x$ thin films of x=50, 60 at.% has the long life for the optical recording media.

• 멤브레인
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• 제25권2호
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• pp.191-201
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• 2015

$TiCo_xFe_{1-x}$(x=0.50~1.00)계 합금을 제조하고, 합금의 특성을 X-ray diffractometer (XRD), pressure composition temperature (PCT)곡선, scanning electron microscopy (SEM)에 의해 조사하였고, $TiCo_xFe_{1-x}$(x=0.50~1.00)-stainless steel (SS) 복합막에 대해 $H_2-N_2$ 혼합기체분리실험을 하였다. X-선 회절분석에 의하면 $TiCo_xFe_{1-x}$(x=0.50~1.00)계 합금의 결정구조는 TiCo와 같은 입방정구조이었다. $TiCo_xFe_{1-x}$(x=0.50~1.00)계 합금은 $120^{\circ}C$에서 hysteresis현상을 나타내었고, 합금 중 Fe의 양이 증가함에 따라 x=0.90~1.00과 0.50~0.55 범위에서는 hysteresis가 증가하였고, x=0.55~0.90 범위에서는 감소하였다. 가장 작은 hysteresis를 나타낸 합금은 $TiCo_{0.55}Fe_{0.45}$이었다. $120^{\circ}C$에서 $TiCo_xFe_{1-x}$(x=0.50~1.00)-SS 복합막의 수소투과압력의 최저값은 $TiCo_{0.55}Fe_{0.45}$에서 2.5 atm을 나타내었고, 최대값은 $TiCo_{0.90}Fe_{0.10}$에서 10 atm을 나타내었다. $TiCo_xFe_{1-x}$(x=0.50~.00)-SS 복합막에 의하여 $120^{\circ}C$에서 $H_2-N_2$ 혼합기체를 분리하는 경우, 가장 우수한 복합막은 고압부의 수소투과압력이 2.5 atm으로 가장 낮고, hysteresis가 가장 작은 $TiCo_{0.55}Fe_{0.45}$-SS 복합막이었다.

• 대한치과기공학회지
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• 제35권4호
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• pp.295-302
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• 2013

Purpose: The grindability of Ti-10%Zr-X%Cr(X=0,1,3) alloys in order to develop Ti alloys for dental applications with better machinability than unalloyed titanium has been evaluated. Methods: Experimental Ti-10%Zr-X%Cr(X=0,1,3) alloys were made in an argon-arc melting furnace. Slabs of experimental alloys were ground using a SiC abrasive wheel on an electric handpiece at one of the four rotational speeds of the wheel (12000, 18000, 25000 or 30000rpm) by applying a force(100gf). Grindability was evaluated by measuring the amount of metal volume removed per minute(grinding rate) and the volume ratio of metal removed compared to the wheel material lost, which was calculated from the diameter loss (grinding ratio). Experimental datas were compared the results with those of cp-Ti(commercially pure titanium) Results: It was observed that the grindability of Ti-10%Zr-X%Cr(X=0,1,3) alloys increased with an increase in the Cr concentration. More, they are higher than cp-Ti, particularly the Ti-10%Zr-3%Cr alloy exhibited the highest grindability at all rotational speeds except 12000rpm. There was significant difference in the grinding rate and grinding ratio between Ti-10%Zr-3%Cr alloy and cp-Ti at all rotational speeds(p<0.05). Conclusion: The Ti-10%Zr-3%Cr alloy exhibited better grindability at high rotational speeds, great potential for use as a dental machining alloy.

• Bulletin of the Korean Chemical Society
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• 제22권10호
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• pp.1081-1088
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• 2001

• Journal of Magnetics
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• 제10권4호
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• pp.149-151
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• 2005

The electric properties of a single crystal bismuth telluride doped with a small concentration of Erbium, $Bi_{z-x}Er_xTe_3$ with x = 0.002, are investigated as a function of temperature. The resistivity was obtained by using the van der Pauw method. The measured electrical resistivity is 78 ${\mu}{\Omega}cm$ at 4.2 K. The charge density of $Bi_{z-x}Er_xTe_3$ is found to be $2{\times}10^{19}/cm^3$ at 4.2 K. It turns out that $Bi_{z-x}Er_xTe_3$ is a p-type semiconductor. It is discussed that the high mobility and less density support that $Bi_{z-x}Er_xTe_3$ is a potential sensor with high energy resolution. Comparison with an established material (i.e. Au:Er alloy) is also discussed.

• 충청수학회지
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• 제32권1호
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• pp.127-138
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• 2019

In this paper, I investigate a stability of the following set-valued functional equation $$f(x+3y){\oplus}10f(x+y){\oplus}7f(-x){\oplus}5f(x-y)=5f(x+2y){\oplus}f(x){\oplus}f(2x){\oplus}f(x-2y)$$ in the sense of P. $G{\check{a}}vruta$.