A Study on the Stability $Te_{100-x}Ge_x$ Thin Films for Optical Recording

광기록을 위한 Te-Ge 박막의 안정도에 관한 연구

  • Chung, Hong-Bay (Dept. of Electronic Materials Engineering, Kwangwoon Univ., Institute of New Technology, Kwangwoon Univ.) ;
  • Lee, Young-Jong (Dept. of Electronics, Yeojoo Technical College) ;
  • Im, Sook (Dept. of Electronic Materials Engineering. Kwangwoon Univ.)
  • 정홍배 (광운대학교 전자재료공학과, 광운대 신기술연구소) ;
  • 이영종 (여주전문대학 전자과) ;
  • 임숙 (광운대학교 전자재료공학과)
  • Published : 1996.11.16

Abstract

We are studied the stability of amorphous and crystalline $Te_{100-x}Ge_x$ (x=10, 15. 25, 40, 50, 60 at.%) thin films by observing the degradation in 8O%RH/$66^{\circ}C$ environment and the reflectance ratio. The degradation was observed with the transmittance and reflectance, the reflectance was measured at 780nm in the wavelength range of diode laser. In amorphous $Te_{100-x}Ge_x$ thin films of below x=4O at.%, the degradation was observed, the thin film of x=10 at.% was shown the degradation degree of 12.5%. In crystalline $Te_{100-x}Ge_x$ thin films of x=10, 40 at.%, the degradation degree were 12.8%, 13%, respectively. The reflectance ratio were shown above 20% in. all composition ratio. Therefore, we are expected that $Te_{100-x}Ge_x$ thin films of x=50, 60 at.% has the long life for the optical recording media.

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