• The Journal of Korea CHUNA Manual Medicine
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• v.4 no.1
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• pp.1-16
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• 2003

Objectives : The purpose of this study is researching for possibility that Moire topography be applied in group school screening for scoliosis known school health problem, and find acceptable method of early detection and early treatment for scoliosis Methods : The authors practiced Moire topography for primary & middle school 1,895 students[male 976, female 919] in Jeonju, korea in 2001. After we distinguished students who had abnormal finding in Moire topography and then re-examined spinal X-ray analysis. The data was analysed and evaluated statistically Results : According to this research, the abnormal finding in Moire topography was 53.7% (1,018 students), and students needed X-ray re-examination were 11.2% (213 students). Students diagnosed scoliosis by X-ray re-examination were 1.8%. According to statistical analysis, interval between vertical base line of pelvis and vertical base line of neck, gap between left distance and right distance to the vertical base line of pelvis and difference of contour lines have strong correlations with deformity degree of the body surface examined by Moire. Conclusions : Following this research, throughout early detection for scoliosis by Moire topography could reduce exposure from scoliosis radiographs, and could detect trunk asymmetry that couldn't be found existing X-ray examination, so it made selecting students under observation who have bad posture possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.192-195
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• 2019

Single-crystal diamond obtained by chemical vapor deposition (CVD) exhibits great potential for use in next-generation power devices. Low defect density is required for the use of such power devices in high-power operations; however, plastic deformation and lattice strain increase the dislocation density during diamond growth by CVD. Therefore, characterization of the dislocations in CVD diamond is essential to ensure the growth of high-quality diamond. In this work, we analyze the characteristics of the dislocations in CVD diamond through synchrotron white beam X-ray topography. In estimate, many threading edge dislocations and five mixed dislocations were identified over the whole surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.371-371
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• 2013

사파이어 단결정 웨이퍼는 제조과정에서 결정 성장 조건 및 기계적 연마에 의하여 내부적인 결함이 발생할 수 있다. 사파이어 단결정은 일반적으로 LED용 기판 재료로 사용되며, 내부결함이 발생 시 기판 위의 GaN 등 layer의 결함도 함께 증가하므로 기판의 결함을 줄이는 과정이 중요한 이슈이다. 이 과정에 X-선 토포그래피는 단결정의 내부 결함을 모니터링 하는데 있어서 매우 유용한 방법이다. 이에 본 연구에서는 사파이어 단결정 웨이퍼에 내재하는 결함 형태를 X-선 Lang 토포그래피 방법(X-ray Lang Topography)으로 이미징하여 관찰, 분석하였다. Lang 토포그래피 방법은 X-선 투과법으로 넓은 부분을 우수한 강도와 분해능으로 내부 결함을 관찰할 수 있는 장점을 지니고 있다. X-선 source는 Mo $k{\alpha}$ 1을 사용하였으며, 시료는 c-plane 사파이어 웨이퍼를 사용하였다. 사파이어 웨이퍼의 (110), (102) 회절면의 X-선 토포그래피 이미지를 통해 전위 결함의 유형에 따른 이미지 패턴의 형성 메커니즘에 대해 연구하였고, 측정 회절면과 두께, 표면 데미지에 따른 전위 결함 이미지의 변화를 확인하였다. X-선 토포그래피 이미지를 통해 단결정 c-plane 사파이어 웨이퍼의 전위 결함의 형성 메카니즘 연구와 유형별 이미지와 회절면, 두께, 표면 데미지에 따른 이미지 변화 등을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.249-256
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• 1994

By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.

• Journal of the Korean Academy of Clinical Electrophysiology
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• v.3 no.1
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• pp.61-70
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• 2005

The purpose of study correlation between 3D-surface topography and Cobb angle in scoliotic patients. It would be recognizing possibility of clinical application with 3D-surface topography with scoliosis assessment and correlation analysis of obtained Cobb angle through measured results of surface topography and took X-ray of subjects with scoliosis, which used to 3D-surface topography of laser scan method. A scoliosis subjects 16(males 4, females 12) agreed for study's purport volunteer our study that diagnose the scoliosis through 3D-surface topography and X-ray. The results were as follow: It was shown that the relation of Cobb angle of scoliosis and itemized 3D-surface topography measurement in horizontal view(p<0.01). top difference of cervicothoracic and lumbar in anterior-posterior view(p<0.05), the top difference of thoracic, thoracolumbar(p<0.01). These results suggest that an itemized 3D-surface topography measurement was highly correlated with Cobb angle. It would be a useful diagnosis method and assessment of physical therapy plan.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.238-238
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• 2013

사파이어 단결정은 광학 투명도, 물리적 강도, 충격 저항, 마모 부식, 높은 압력 및 온도 내구성, 생체 호환성 등 다양한 특성을 가지고 있어 다양한 분야에서 사용되고 있으며, 특히 최근에는 백색 또는 청색 LED 소자 분야에서 기판으로 주로 활용되고 있다. 이러한 사파이어 단결정 기판은 공정에서 결정 성장 조건 및 기계적 연마 등의 다양한 요인으로 결정학적 결함이 발생한다. 이러한 결정학적 결함을 제어함으로서 좋은 품질의 단결정 기판을 생산할 수 있다. 이에 따라 각종 결함 제어를 위해서 X-선, EPD, 레이저 편광법 등 다양한 방법으로 결함들을 측정하고 있다. 그 중에서도 X-선 토포그래피는 시료를 비파괴적인 방법으로 단결정의 결함 밀도와 유형 등을 파악하는데 매우 유용한 측정법이며, Lang 토포그래피로 대표되는 X-선 회절 투과법은 기판과 같은 대구경의 시료를 우수한 분해능으로 내부 결함까지 관찰할 수 있는 장점을 지니고 있다. 본 연구에서는 대구경 사파이어 단결정 기판에 내재하는 결정 결함을 확인 및 분석하기 위해 X-선 Lang 토포그래피(X-ray Lang Topography) 장비를 구축하였다. 그리고 4, 6인치 c-면 사파이어 단결정 기판의 (110), (102) 회절면의 X-선 토포그래피 측정을 통해 전위(dislocation), 스크래치(scratch), 표면데미지(surface damage), 트윈(twin), 잔류 응력(strain) 등의 결함의 유형을 식별 및 분석하였으며, 각각의 결함들의 토포그래피 이미지 형성 메커니즘에 대해 분석하였다. 이를 통해 X-선 Lang 토포그래피(X-ray Lang Topography) 장비가 대구경 사파이어 단결정 기판의 결정 결함 평가에 폭넓은 활용이 가능할 것으로 예상된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.152-158
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• 2018

PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.12
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• pp.3540-3545
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• 2009

Due to recent development of high temperature high pressure(HTHP) diamond synthetic and treatment technology, we need to identify the natural diamonds fast, reliable, and economically. We proposed using new method of UV fluorescence and X-ray Lang topography imaging for distinguishing one synthetic diamond from four natural colored diamonds. We observe unique local stress field uneven image in synthetic diamond using UV fluorescence and Lang topography characterization, while uniform images in natural diamonds. Especially, X-ray Lang method offered the better identification power with better high resolution on stress field images.

• The Journal of Korea CHUNA Manual Medicine
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• v.4 no.1
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• pp.141-153
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• 2003

Objectives : The purpose of this study is researching for correlation between Moire topography results and questionnaire which include obesity rate, height, weight, posture, pain aspect (low back pain, headache, fatigue, neck pain etc), studying posture, school attendance method, menarche. Methods : The authors practiced Moire topography and questionnaire for primary & middle school 24,419 students [male 12,843, female 11,576] in Jeonbuk, korea in 2002. After we distinguished students who had abnormal finding in Moire topography and statistically analysed the data. Results : According to this research, the abnormal finding in Moire topography results was 37.3% (9,105 students), and students needed X-ray re-examination were 3.9% (953 students). According to statistical analysis, male/female and primary/middle school students have no difference in deformity degree of the body surface examined by Moire. Height and weight have low correlation with deformity degree of the body surface examined by Moire and menarche, pain aspect have no correlation. But, school attendance method by bicycle and $90^{\circ}$upright sitting in study posture is the best way to decrease the deformity degree of the body surface examined by Moire. Conclusions : Following this research, throughout Moire topography could detect trunk asymmetry that couldn't be found existing X-ray examination, and school attendance by bicycle and $90^{\circ}$upright sitting in study posture is good for school students to prevent back deformity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.581-586
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• 1998

We investigated the effect of mechanical back side damage in Czochralski grown silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductivity decay method, degree of X-ray diffuse scattering, X-ray section topography, and wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the magnitude of diffuse scattering and X-ray excess intensity increased proportionally, and it was at Grade 1:Grade 2:Grade 3=1:7:18.4 that the normalized relative quantization ratio of excess intensity in damaged wafer was calculated, which are normalized to the excess intensity from sample Grade 1.