• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.165-171
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• 2020

The electrochemical preparation and spectroscopic characterisation of iridium-antimony (Ir-Sb) species is important owing to their potential applications as nanostructure materials. Nanostructures, i.e. nanoflower and nanodisk, of Ir-Sb were electrodeposited on conductive substrates using a practical electrochemical method based on the simultaneous underpotential deposition (UPD) of Ir and Sb from the IrCl₃ and Sb₂O₃ at a constant potential. Electrochemical UPD mechanism of Ir-Sb was studied using cyclic voltammetry and potential-controlled electrochemical deposition techniques. Herein, X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, X-ray photoelectron and Raman spectroscopy were used to determine the morphological and structural properties of the electrochemically-synthesised Ir-Sb nanostructures.

• Journal of Industrial Technology
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• v.16
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• pp.169-174
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• 1996

Microstructural analyses of synthetic arsenic-containing heavy metal sludges solidified with Portland cement were performed. Heavy metal sludges containing 0.04M of cadmium, chromium, copper, lead, and arsenic were prepared by sodium hydroxide precipitation and successive vacuum filtration. The sludges mixed with cement were cured for 14 days. The solidified sample was characterized by 1) leaching test, 2) scanning electron microscopy and 3) X-ray diffractometry. Of the metals tested, only Pb concentration in the leachate exceeded the Korean regulatory limit. The level of lead in the leachate was as high as 10 times the regulatory limit. X-ray analysis suggested that the metal hydroxides might be present in complex or impure crystalline phases.

• Journal of the Korean Chemical Society
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• v.57 no.4
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• pp.489-492
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• 2013

N-doped $TiO_2$ microcuboids were successfully prepared by a simple one-pot hydrothermal method. The samples were characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance spectroscopy, and X-ray photoelectron spectroscopy. It was found that the N-doped $TiO_2$ microcuboids enhanced absorption in the visible light region, and exhibited higher activity for photocatalytic degradation of model dyes. Based on the experimental results, a visible light induced photocatalytic mechanism was proposed for N-doped anatase $TiO_2$ microcuboids.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.521-528
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• 1990

Li2O.2SiO2 glass-ceramics were made from the melt by the nucleation and growth treatment. The optimum nucleation temperature and time were determined from DTA curves of as-quenched and thermally treated glasses, and found to be 44$0^{\circ}C$ and 3hrs. The optical microscopic technique was also used to support this result. The volume fractions of crystals present in the partially crystallized specimens were measured using the optical microscopy and the amorphous X-ray scattering methods. The degree of crystallization increased with increasing the crystallization temperature and time. The crystalline phase identified by X-ray diffraction was lithium disilicate. As the crystallinity increased up to 95%, the transmittance of glass-ceramics was decreased linearly. It was also found that for the same heat treatment condition (575$^{\circ}C$, 30min), a thicker specimen showed higher transmittance, presumably due to less crystallinity.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.269-275
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• 2010

In this study, we successfully prepared CNT/$TiO_2$, Pt/CNT and Pt/CNT/$TiO_2$ composites and investigated their photocatalytic activity in MB solution by irradiation under UV light. Fourier transform infrared (FT-IR) spectroscopy was used to characterize the functional group on the surface of MWCNTs, which oxidized by MCPBA. Brunauer-Emmett-Teller (BET) surface area, transmission electron microscopy (TEM), X-ray diffraction (XRD) and energy dispersive X-ray (EDX) were used to analyze the prepared composites. The results of the decomposition of the MB solution indicated that the Pt/CNT/$TiO_2$ composite had the best photocatalytic activity among the three kinds of composites.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.123-126
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• 2011

Titanium dioxide ($TiO_2$) thin films were deposited by the sol-gel method with a surfactant-assisted mechanism. Its application for dye-sensitized solar cells (DSSCs) was investigated. Brunauer-Emmett-Teller, X-ray diffraction and field emission scanning electron microscopy techniques were used to characterize the surface characteristics of thin films. Photovoltaic-current density measurements were performed to determine the photoelectrochemical properties of the thin films and the performance of DSSCs. Energy conversion efficiency of about 6.1% was achieved for cells with conductive glass under illumination with AM 1.5 (100 $mWcm^{-2}$) simulated sunlight. Investigation showed higher photo-energy conversion efficiency for mesoporous $TiO_2$ nanocrystalline films used in DSSCs relative to commercially available Degussa P25 films.

• Journal of the Korean Society of Costume
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• v.58 no.5
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• pp.211-231
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• 2008

To conserve historic textiles, analyses of textile materials, pollutants and deterioration are prerequisite steps. Based upon analytical results, guides for conservation of historic textiles are established. In analyses of textile materials, pollutants and deterioration, there are chemical methods(burning, solubility and staining), physical methods(microscopy and density) and instrumental analysis(Fourier Transform Infrared Spectroscopy (FT-IR), Fourier Transform Raman Spectroscopy(FT-Raman), Gas Chromatography(GC), Mass Spectroscopy(MS), X-Ray Fluorescence (EDXRF, WDXRF), Energy Dispersive Spectroscopy(EDS), and X-Ray Diffraction(XRD), Tensile Testing Machine etc.). Combination of qualitative and quantitative analyses makes accurate diagnosis of textile condition possible. As examples of analyses and conservation of historic textiles, Chuninsan(19 century) similar to sunshade with handing down historic textile and golden decorative skirt(17 century) with excavated costume are taken.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.2-352.2
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• 2014

In this present work, we report a Cu-Mn alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between Mn-based interlayer interlayer, thermal stability was measured with various low-k dielectrics. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the Mn based self-formed barriers after annealing were determined by the C concentration in the dielectric layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.173.2-173.2
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• 2014

Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.