• Korean Journal of Metals and Materials
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• v.47 no.12
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• pp.842-851
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• 2009

The long-term reliability of Sn-0.3wt%Ag-0.7wt%Cu solder joints was evaluated and compared with Sn-3.0wt%Ag-0.5wt%Cu under thermal shock conditions. Test vehicles were prepared to use Sn-0.3Ag-0.7Cu and Sn-3.0Ag-0.5Cu solder alloys. To compare the shear strength of the solder joints, 0603, 1005, 1608, 2012, 3216 and 4232 multi-layer ceramic chip capacitors were used. A reflow soldering process was utilized in the preparation of the test vehicles involving a FR-4 material-based printed circuit board (PCB). To compare the shear strength degradation following the thermal shock cycles, a thermal shock test was conducted up to 2,000 cycles at temperatures ranging from $-40^{\circ}C$ to $85^{\circ}C$, with a dwell time of 30 min at each temperature. The shear strength of the solder joints of the chip capacitors was measured at every 500 cycles in each case. The intermetallic compounds (IMCs) of the solder joint interfaces werealso analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The results showed that the reliability of Sn-0.3Ag-0.7Cu solder joints was very close to that of Sn-3.0Ag-0.5Cu. Consequently, it was confirmed that Sn-0.3Ag-0.7Cu solder alloy with a low silver content can be replaced with Sn-3.0Ag-0.5Cu.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.121-126
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• 1996

In this paper an MMIC VCO which can be used in a double conversion TV tuner is designed, fabricated and measured. The VCO is designed using the small signal method and fabricated using ETRI GaAs MMIC foundry. The 3x200$\mu$m gate width MESFET with 1$\mu$m gate length is used for an active device and MIM capacitors, spiral inductors, thin film resitors are used as passive elements. The VCO has output power of 10.95dBm at 1955 MHz with 5V bias voltage and 4V tuning voltage. The oscillation frequency change form 1947 MHz to 1964 MHz is obtaine dby an external varactor diode connected to the gate with a tuning voltage from 0 V to 6V.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.966-969
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• 2003

Thin film capacitors with Al-Polymer-Al sandwich structure were fabricated. The bottom and top aluminium (Al) electrodes were deposited by vacuum evaporation and copper phthalocyanine (CuPc), polyaniline-emeraldine base (Pani-EB) and cobalt phthalocyanine/polyaniline - emeraldine base (CoPc /Pani-EB) blend films (which can be used as buffer hole injection layer in OLEDs) were deposited by spin coating technique. X-ray diffractograms indicated amorphous nature of the polymer films whose thicknesses were measured by capacitance and Rutherford Backscattering Spectrometry (RBS) methods. AC conduction studies revealed that the conduction mechanism responsible in these films is variable range hopping of polarons. From D.C conduction studies, it is observed that, the nature of conduction is ohmic in the lower fields and at higher fields the dominating D.C conduction is of Poole-Frenkel type.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

• Carbon letters
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• v.15 no.2
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• pp.146-150
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• 2014

In this work, activated carbon nanofiber (ACNF) electrodes with high double-layer capacitance and good rate capability were prepared from polyacrylonitrile nanofibers by optimizing the carbonization temperature prior to $H_2O$ activation. The morphology of the ACNFs was observed by scanning electron microscopy. The elemental composition was determined by analysis of X-ray photoelectron spectroscopy. $N_2$-adsorption-isotherm characteristics at 77 K were confirmed by Brunauer-Emmett-Teller and Dubinin-Radushkevich equations. ACNFs processed at different carbonization temperatures were applied as electrodes for electrical double-layer capacitors. The experimental results showed that the surface morphology of the CNFs was not significantly changed after the carbonization process, although their diameters gradually decreased with increasing carbonization temperature. It was found that the carbon content in the CNFs could easily be tailored by controlling the carbonization temperature. The specific capacitance of the prepared ACNFs was enhanced by increasing the carbonization temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.865-870
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• 2003

The MFIS (Metal-Ferroelectric-Insulator-Semiconductor) capacitors were fabricated using a metalorganic decomposition method. Thin layers of CeO$_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the CeO$_2$ layer. The morphology of films and the interface structures of the BLT and the CeO$_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 2.82 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Carbon letters
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• v.15 no.1
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• pp.71-76
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• 2014

Activated carbon nanofibers (ACNF) were prepared from polyacrylonitrile (PAN)-based nanofibers using $CO_2$ activation methods with varying activation process times. The surface and structural characteristics of the ACNF were observed by scanning electron microscopy and X-ray diffraction, respectively. $N_2$ adsorption isotherm characteristics at 77 K were confirmed by Brunauer-Emmett-Teller and Dubinin-Radushkevich equations. As experimental results, many holes or cavernous structures were found on the fiber surfaces after the $CO_2$ activation as confirmed by scanning electron microscopy analysis. Specific surface areas and pore volumes of the prepared ACNFs were enhanced within a range of 10 to 30 min of activation times. Performance of the porous PAN-based nanofibers as an electrode for electrical double layer capacitors was evaluated in terms of the activation conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3730-3734
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• 2010

A simple, inexpensive and less time consuming electrochemical methods were carried out to prepare ordered mesoporous cobalt films. Ordered mesoporous cobalt films were successfully synthesized by templated electrodepostion of hexagonal $H_1$-e Co ion. The electrodeposited mesopores films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), low angle X-ray diffraction (XRD) and voltammetric methods. The applicability of thin films as high - performance super capacitors electrode materials is demonstrated electrochemically using cyclic voltammetry (CV) technique.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.46-49
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• 1986

A 32x32 liquid crystal (LC) flat panel display using two-dimensional array of PMOS switches and capacitors is designed and fabricated. Standard PMOS process was followed to fabricate the switch and capacitor array on silicon wafer, on the top of which guest-host effect liquid crystal was wmployed as an electro-optical material for optical switching and liquid crystal display(LCD) with its external drive circuitry was basically successful. Remaining problems to be solved are improvement of contrast ratio, good surface alignment and uniformity.