Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Characterization of Pt/BLT/CeO2/Si Structures using CeO2 Buffer Layer

CeO2Buffer Layer를 이용한 Pt/BLT/CeO2/Si 구조의 특성

  • 이정미 (중앙대학교 전자전기공학부) ;
  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2003.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

The MFIS (Metal-Ferroelectric-Insulator-Semiconductor) capacitors were fabricated using a metalorganic decomposition method. Thin layers of CeO$_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the CeO$_2$ layer. The morphology of films and the interface structures of the BLT and the CeO$_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 2.82 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

Keywords

References

  1. Science v.246 Ferroelectric memories J.f.Scott;C.A.Araujo https://doi.org/10.1126/science.246.4936.1400
  2. Thin Solid Films v.385 Characteristics of ferroelectric pb(Zr,Ti)O₃films epitaxially grown on CeO₂(111)/Si(111) substrates B.K.Moon;H.Ishiwara;E.Tokumitsu;M.Yoshimoto https://doi.org/10.1016/S0040-6090(00)01900-3
  3. Appl. Phys. Lett. v.71 no.24 Memory window of $Pt/SrBi_{2}Ta_{2}O_{9}/CeO_{2}/Si$ structure for metal ferroelectric insulator semiconductor field effect transistor Y.T.Kim;D.S.Shin https://doi.org/10.1063/1.120374
  4. 전기전자재료학회논문지 v.11 no.3 MOD 법에 의한 강유전성 $Sr_{x}Bi_{y}Ta_{2}O_{9-a}$(SBT)박막의 제조 및 후 열처리 효과에 관한 연구 김병호;윤희성;정병식;신동석
  5. 전기전자재료학회논문지 v.13 no.8 MOD 법으로 제조한 강유전성 SBT 박막에서 하부전극이 유전 및 전기적 특성에 미치는 영향 김태훈;김병호;송석표
  6. 전기전자재료학회논문지 v.15 no.6 MOD 법으로 제작된 $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ 박막의 강유전 특성 김경태;김창일;권지운;심일훈 https://doi.org/10.4313/JKEM.2002.15.6.486
  7. Jpn. J. Appl. Phys. v.40 Fabrication and characterization of $Pt/(Bi,La)_{4}Ti_{3}O_{12}/Si_{3}N_{4}/Si$ metal ferroelectric insulator semiconductor structure for FET-type serroectric memory applications T.KiJima;Y.Fujisaki;H.Ishiwara https://doi.org/10.1143/JJAP.40.2977
  8. Jpn. J. Appl. Phys. v.40 Electrical characteristic of $Pt/SrBi_{2}Ta_{2}O_{9}/Ta_{2}O_{5}/Si$ using $Ta_{2}O_{5}$ as the buffer layer H.S.Choi;Y.T.Kim;S.I.Kim;I.H.Choi https://doi.org/10.1143/JJAP.40.2940
  9. Jpn. J. Appl. Phys. v.36 Growth and characterization of ferroelectric Pb(Zr,Ti)O₃films on tnterface-controlled CeO₂(111)/Si(111) structures M.B.Lee;T.Ohnishi;T.Maeda;M.Kawasaki https://doi.org/10.1143/JJAP.36.6500
  10. Thin Solid Films v.368 Characterization of CeO₂thin films as insulator of metal ferroelectric insulator semiconductor(MFIS) structures H.W.Song;C.S.Lee;D.G.Kim;K.S.No https://doi.org/10.1016/S0040-6090(00)00860-9
  11. Appl. Phys. Lett. v.79 no.10 Electrical properties of $Bi_{3.25}La_{0.75}Ta_{3}O_{12}$ thin films on Si for a metal-ferroelectric-insulator-semiconductor structure T.J.Choi;Y.S.Kim;C.W.Yang;J.C.Lee https://doi.org/10.1063/1.1400764