• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.159-162
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• 1999

In this paper, we have designed and fabricated a MMIC power amplifier for X-band using AlGaAs/InGaAs/GaAs PM-HEMTs and passive devices such as Ti thin film resistors, rectangular spiral inductors and MIM capacitors. The fabricated MMIC power amplifier for X-band shows that S/ sub 21/ and S$_{11}$ are 14.804 ㏈ and -29.577 at 8.18 GHz, respectively. The chip size is 1.86$\times$1.29 $\textrm{mm}^2$.>.>.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1516-1519
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• 1996

In this paper, a study on the electrical properties of ternary compound ceramics $[(1-y-x)BaTiO_{3}-ySrTiO_{3}-xMgTiO_3]$ fabricated 7 samples with each mol[%] by using the mixed oxide method. In this case, the sintering temperature were at $1,250[^{\circ}C]$ for 2[hr]. Also made ceramic capacitors from 7 samples, temperature coefficient of the capacitance and the variation of relative dielectric constants and loss with fixed frequency (1KHZ) were studied. In some ceramic capacitors, has shown very good properties of the dielectric constants and loss. In case of BSM-11 ceramic capacitor, is sure to the commercial capacitor which shows steady properties.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.627-627
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• 2009

In this work, the activated carbons (ACs) with high porosity were synthesized from pitch by KOH chemical activation. The structure and surface properties of ACs were characterized by means of elemental analysis, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy(XPS). And, the influence of the KOH-to-pitch ratio on the porosity of the ACs was investigated using the nitrogen adsorption isotherms at 77 K and a scanning electron microscopy (SEM). As a result, pitch could be successfully converted into ACs with well-developed micro and mesopores. The specific surface areas and pore volumes were increased with an increase of the KOH-to-pitch ratio. Furthermore, it was found that the addition of KOH led to the transformation of the micropores to the meso- and macropores. In the application to electric double layer capacitors (EDLC), the pitch-based ACs showed a higher capacitance per weight and per volume, and an excellent electrochemical stability in the high voltage region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.106-112
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• 2007

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.37-42
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• 2014

Well-distributed ruthenium (Ru) nanoparticles decorated on porous carbon nanofibers (CNFs) were synthesized using an electrospinning method and a reduction method for use in high-performance elctrochemical capacitors. The formation mechanisms including structural, morphological, and chemical bonding properties are demonstrated by means of field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). To investigate the optimum amount of the Ru nanoparticles decorated on the porous CNFs, we controlled three different weight ratios (0 wt%, 20 wt%, and 40 wt%) of the Ru nanoparticles on the porous CNFs. For the case of 20 wt% Ru nanoparticles decorated on the porous CNFs, TEM results indicate that the Ru nanoparticles with ~2-4 nm size are uniformly distributed on the porous CNFs. In addition, 40 wt% Ru nanoparticles decorated on the porous CNFs exhibit agglomerated Ru nanoparticles, which causes low performance of electrodes in electrochemical capacitors. Thus, proper distribution of 20 wt% Ru nanoparticles decorated on the porous CNFs presents superior specific capacitance (~280.5 F/g at 10 mV/s) as compared to the 40 wt% Ru nanoparticles decorated on the porous CNFs and the only porous CNFs. This enhancement can be attributed to the synergistic effects of well-distributed Ru nanoparticles and porous CNF supports having high surface area.

• ETRI Journal
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• v.37 no.5
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• pp.972-978
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• 2015

This paper proposes an accurate tunable-gain 1/x circuit. The output voltage of the 1/x circuit is generated by using a capacitor charging time that is inversely proportional to the input voltage. The output voltage is independent of the process parameters, because the output voltage depends on the ratios of the capacitors, resistors, and current mirrors. The voltage gain of the 1/x circuit is tuned by a 10-bit digital code. The 1/x circuit was fabricated using a $0.18{\mu}m$ CMOS process. Its core area is $0.011mm^2$ ($144{\mu}m{\times}78{\mu}m$), and it consumes $278{\mu}W$ at $V_{DD}=1.8V$ and $f_{CLK}=1MHz$. Its error is within 1.7% at $V_{IN}=0.05V$ to 1 V.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.238-244
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• 1999

Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.

• Advances in Energy Research
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• v.8 no.1
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• pp.41-57
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• 2022

Electrochemical double-layer capacitors (EDLCs) based on solid polymer electrolytes (SPEs) have gained an immense recognition in the present world due to their unique properties. This study is about preparing and characterizing EDLCs using a natural rubber (NR) based SPE with natural graphite (NG) electrodes. NR electrolyte was consisted with 49% methyl grafted natural rubber (MG49) and zinc trifluoromethanesulfonate ((Zn(CF₃SO₃)₂-ZnTF). It was characterized using electrochemical impedance spectroscopy (EIS) test, dc polarization test and linear sweep voltammetry (LSV) test. NG electrodes were made using a slurry of NG and acetone. EIS test, cyclic voltammetry (CV) test and galvanostatic charge discharge (GCD) test have been done to characterize the EDLC. Optimized electrolyte composition with NR: 0.6 ZnTF (weight basis) exhibited a conductivity of 0.6 x 10^-4 Scm^-1 at room temperature. Conductivity was predominantly due to ions. The electrochemical stability window was found to be from 0.25 V to 2.500 V. Electrolyte was sandwiched between two identical NG electrodes to fabricate an EDLC. Single electrode specific capacitance was about 2.26 Fg^-1 whereas the single electrode discharge capacitance was about 1.17 Fg^-1. The EDLC with this novel NR-ZnTF based SPE evidences its suitability to be used for different applications with further improvement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.45-46
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• 2009

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with thin (${\approx}10\;nm$) Inductive-Coupled Plasma (ICP) CVD $Si_xN_y$ dielectric layers and investigated electrical properties of nitrided $SiO_2$/4H-SiC interface after oxidizing the $Si_xN_y$ in dry oxidation and/or $N_2$ annealing. An improvement of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements if compared with non-annealed oxidized-SiN. The improvements of SiC MOS capacitors formed by oxidized-SiN have been explained in this paper.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.241-244
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• 2014

Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.