Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Comparative Study on Cu Drift Diffusion of Low-k Dielectrics and Thermal Oxide by use of BTS Technique

BTS 방법을 사용한 Low-K 유전체 물질들과 산화막의 Cu 드리프트 확산에 대한 비교 연구

  • 추순남 (경원전문대학 전기제어시스템과) ;
  • 권정열 (경원전문대학 전기제어시스템과) ;
  • 김장원 (경원전문대학 정보통신과) ;
  • 박정철 (경원전문대학 전자정보과) ;
  • 이헌용 (명지대학교 전기공학과)
  • Published : 2007.02.01
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Abstract

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

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References

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