• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.137-140
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• 2003

Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.106-112
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• 2007

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• Nonlinear Functional Analysis and Applications
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• v.27 no.4
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• pp.813-837
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• 2022

In this paper we consider inverse problem for a general class of nonlinear stochastic differential equations on Hilbert spaces whose generating operators (drift, diffusion and jump kernels) are unknown. We introduce a class of function spaces and put a suitable topology on such spaces and prove existence of optimal generating operators from these spaces. We present also necessary conditions of optimality including an algorithm and its convergence whereby one can construct the optimal generators (drift, diffusion and jump kernel).

• Journal of Electrochemical Science and Technology
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• v.5 no.2
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• pp.53-57
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• 2014

With the use of diffusion-limited aggregation modeling, we have investigated the effect of particle drift for dendritic growth. It is found that the morphology of dendritic growth is sensitive to the particle drift, i.e., the larger drift effect results in the denser growth of dendrite. From the analysis using the correlation function, we found the fractional dimension of each dendrite increases as the particles drift increases. Furthermore, we showed the height of dendrite significantly decrease for the slight change of particles drift. Finally, we discussed the strategy to reduce dendritic growth by modifying the transport properties of electrolytes.

• Communications for Statistical Applications and Methods
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• v.14 no.1
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• pp.241-254
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• 2007

This paper propose a new short-term interest rate model having a different nonlinear drift function and the same diffusion coefficient with Chan et al. (1992) model. The fractional polynomial power of the drift function in our model is linked to the local volatility elasticity of the diffusion coefficient. While the nonlinear drift function estimated by $A\"{\i}t$-Sahalia (1996a) and others has a feature that higher interest rates tend to revert downward and low rates upward, the drift function estimated by our nonlinear model shows that higher interest rate mean-reverts strongly, but, medium rates has almost zero drift and low rates has a very small drift. This characteristic coincides the empirical result based on the nonparametric methodology by Stanton (1997) and the implication by the scatter plot of the short rate data.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.477-479
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• 2017

Drift-Diffusion 방법은 반도체 소자의 내에서의 전하 수송 방정식을 푸는 수치해석적인 방법 중에서 비교적 계산량이 적고, 이런 장점으로 인해 널리 쓰이는 방법이다. 이 방법을 이용하여 간단한 PN diode 구조에서의 전기장, 전압 분포, IV curve 등을 확인 하는 코드를 작성하고, 작성한 코드의 신뢰성 검증을 위하여 TCAD tool인 SDEVICE와 EDISON tool을 이용하여 비교해 본다.

• Nuclear Engineering and Technology
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• v.31 no.2
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• pp.151-156
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• 1999

Under the heavy irradiation of crystalline materials when the production and the recombination of interstitials and vacancies are included, the diffusion equations become nonlinear. An effort has been made to arrange an appropriate transformation of these nonlinear differential equations to more solvable Poisson's equations, finally analytical solutions for simultaneously calculating the concentrations of interstitials and vacancies in the angular dependent Cottrell's potential of the edge dislocation have been derived from the well-known Green's theorem and perturbation theory.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.387-390
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• 1999

Electron swarm parameterdthe drift velocity and longitudinal diffusion coefficienthn $SiH_4-Ar$ mixtures containing 0.5% and 5% monosilane were measured using over the range of E/N from 0.01 to 300 Td at room temperature. Electron swarm parameters in argon were drastically changed by adding a small amount of monosilane. The electron drift velocity in both mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tern approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.