• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.2
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• pp.33-37
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• 2014

We have developed a novel passivation process employing a sacrificial gallium oxide process in order to recover the surface damage in AlGaN/GaN HFETs. Even with a conventional prepassivation process, surface damage during high temperature ohmic annealing cannot be avoided completely. Therefore, it is necessary to recover the damaged surface to avoid the characteristic degradation. In this work, a sacrificial gallium oxide process has been proposed in which the damaged surface after ohmic annealing was oxidized by oxygen plasma treatment and thereafter etched back using HCl. As a result, the leakage current was dramatically reduced and thus the subthreshold slope was significantly improved. In addition, the maximum drain current level was increased from 594 to 634 mA/mm. To verify the effects, the surface conditions were carefully investigated using X-ray photoelectron spectroscopy.

• Analytical Science and Technology
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• v.8 no.3
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• pp.351-358
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• 1995

Oxidation behavior on the surface of Nd-Fe-B ribbon alloy has been studied by X-ray Photoelectron Spectroscopy. In the incipient stage of oxidation on the surface of "as-received" ribbon Nd-oxide film was formed from the fast oxidation of Nd and Fe was metal state in bulk. In process of oxidation time Fe was more abundant in the outmost surface of ribbon from the defused Fe through Nd-oxide film and layer structure of oxidation film was formed.

• Nuclear Engineering and Technology
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• v.41 no.1
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• pp.107-112
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• 2009

Corrosion of nickel-base alloys (Hastelloy C-276, Inconel 625, and Inconel X-750) in $500^{\circ}C$, 25MPa supercritical water (with 10 wppb oxygen) was investigated to evaluate the suitability of these alloys for use in supercritical water reactors. Oxide scales formed on the samples were characterized by gravimetry, scanning electron microscopy/energy dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The results indicate that, during the 1000h exposure, a dense spinel oxide layer, mainly consisting of a fine Cr-rich inner layer ($NiCr_{2}O_{4}$) underneath a coarse Fe-rich outer layer ($NiFe_{2}O_{4}$), developed on each alloy. Besides general corrosion, nodular corrosion occurred on alloy 625 possibly resulting from local attack of ${\gamma}$" clusters in the matrix. The mass gains for all alloys were small, while alloy X -750 exhibited the highest oxidation rate, probably due to the absence of Mo.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.156-161
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• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.84-87
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• 2003

Carbon nitride ($CN_x$) films were prepared by reactive RF magnetron sputtering system with DC bias at various deposition conditions and the electrical properties were investigated. The films were characterized by fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The metal-insulator-semiconductor (MIS) capacitor which has $Al/CN_x/Si$ structure was designed and fabricated to investigate the capacitance-voltage (C-V) characteristics. Dielectric constant of carbon nitride films is very small.

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.19-24
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• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.14-17
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• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.106.2-106.2
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• 2011

다층 박막 구조로 이루어진 CdS/CdTe 태양전지의 경우, 각각의 박막이 다양한 제조 공정을 거치면서 물성특성의 변화를 겪게 된다. 각각의 박막이 고온의 열처리 공정과, $CdCl_2$ 용액 처리 및 후면 산화막 제거 공정 등을 거치게 되면서 겪게 되는 물성 변화 분석을 살펴보고자 한다. 각각의 박막 제조 방식은 일반적으로 사용되는 방식으로, CdS의 경우는 용액성장법(Chemical Bath Deposition, CBD), CdTe의 경우는 근접승화법(Closed Space Sublimaition, CSS)을 사용했으며, X-Ray Diffractometer (XRD), Raman spectroscopy, Field Emission Scanning Electron Microscope (FE-SEM), Energy Dispersive Spectroscopy (EDS), X-ray Photoelectron Spectroscopy (XPS) 등을 이용하여 분석하였다. 각각의 셀 제조 공정을 거치면서 CdS, CdTe 박막들은 결정, 광 특성, 성분 변화를 보였다.

• Advances in nano research
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• v.5 no.3
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• pp.203-214
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• 2017

In this study we present the reaction mechanism of $Cu_2ZnSnSe_4$ (CZTSe) nanoparticles synthesized by microwave-assisted chemical synthesis. We performed reactions every 10 minutes in order to identify different phases during quaternary CZTSe formation. The powder samples were analyzed by x-ray diffraction (XRD), Raman spectroscopy, energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The results showed that in the first minutes copper phases are predominant, then copper and tin secondary phases react to form ternary phase. The quaternary phase is formed at 50 minutes while ternary and secondary phases are consumed. At 60 minutes pure quaternary CZTSe phase is present. After 60 minutes the quaternary phase decomposes in the previous ternary and secondary phases, which indicates that 60 minutes is ideal reaction time. The EDS analysis of pure quaternary nanocrystals (CZTSe) showed stoichiometric relations similar to the reported research in the literature, which falls in the range of Cu/(Zn+Sn): 0.8-1.0, Zn/Sn: 1.0-1.20. In conclusion, the evolution pathway of CZTSe synthesized by this novel method is similar to other synthesis methods reported before. Nanoparticles synthesized in this study present desirable properties in order to use them in solar cell and photoelectrochemical cell applications.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.318-321
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• 2007

CdSe nanoparticles were prepared by chemical solution methods using $CdCl_2{\cdot}4H_2O$ (or $Cd(NO_3)_ 2{\cdot}4H_2O$) and $Na_2SeSO_3$. The characteristics of CdSe nanoparticles were controlled by the react ion time, reaction temperature and reaction method as well as the surfactants. Cetyltrimethyl ammonium bromide(CTAB) was used as a capping agent to control the chemical reactions in aqueous solution. Polyvinylalcohol(PVA) was used as a templet in sono-chemical method. CdSe nanoparticles synthesized in aqueous solution showed homogeneous size distribution with relatively stable surface. CdSe nanoparticles synthesized in non-aqueous solution containing diethanolamine(DEA) showed the structure transformation from cubic to hexagonal as the reduction temperature increased from 80 to $160^{\circ}C$. Core shell CdSe was synthesized by sono-chemical method. Characteristics of CdSe nanoparticles were analyzed using transmission electron microscopy(TEM), x-ray photoelectron spectroscopy(XPS), x-ray diffraction(XRD), UV-Vis absorption spectra, fourier transform infrared spectroscopy(FT-IR) and photoluminescence spectra spectroscopy(PL). This paper presents simple routes to prepare CdSe nanoparticles for solar cell applications.