• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.708-712
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• 2002

The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (＞40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (＞$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.1-4
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• 2004

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition(CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_2$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_0$ and $c_0$ were $4.302{\AA}$ and 7.014 ${\AA}$, respectively. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 200K, and by polar optical scattering at temperature range of 200K and 293K. We measured also spectral response, sensitivity$(\gamma)$, maximum allowable power dissipation and response time on these samples.

• 비파괴검사학회지
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• 제26권6호
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• pp.417-426
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• 2006

A Digital X-ray imaging system using Compton backscattering has been developed to obtain a cross-sectional profile and mass loss of corroded lap-splices of aging aircraft from density variation. A slit-type camera was designed to focus on a small scattering volume inside the material, from which the backscattered photons are collected by a collimated scintillator detector for interpretation of material characteristics. The cross section of the lap-joint is scanned by moving the scattering volume through the thickness direction of the specimen. The mass loss of each layer has been estimated from a Compton backscatter A-scan to obtain the thickness of each layer including the aluminum sheet, the corrosion layer and the sealant. Quantitative information such as location and width of planar corrosion in the lap splices of fuselages is obtained by deconvolution using a nonlinear least-square error minimization method(BFGS method): A simple reconstruction model is also introduced to overcome distortion of the Compton backscatter data due to attenuation effects attributed to beam hardening and quantum noise.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1036-1038
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• 2001

The sapphire orientation dependence of the crystallization of ZnO thin films has been studied using real-time synchrotron x-ray scattering. The amorphous ZnO thin films with a 2400-${\AA}$-thick were grown on sapphire(110) and sapphire(001) substrates by radio frequency magnetron sputtering at room temperature. The amorphous ZnO films were crystallization into epitaxial ZnO(002) grains both on the sapphire(110) and on the sapphire(001) substrates. The epitaxial quality, such as mosaic distribution and crystal domain size, of the ZnO grains on the sapphire(110) is high, similar to that of the ZnO grains on the sapphire(001). With increasing the annealing temperature to 600$^{\circ}C$, the mosaic distribution and the crystal domain size of ZnO(002) grains in the film normal direction was improved and decreased, respectively.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• Macromolecular Research
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• 제14권1호
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• pp.45-51
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• 2006

We conducted simultaneous, small-angle, X-ray scattering/differential scanning calorimetry (SAXS/DSC) and simultaneous, wide-angle, X-ray scattering (WAXS)/DSC measurements for a polymer blend of poly($\varepsilon$-caprolactone)/poly(ethylene glycol)(PCL/PEG). The time-dependent SAXS/DSC and WAXS/DSC results, measured while the system was quenched below the melting temperature of PCL from a melting state, revealed the competitive behavior between liquid-liquid phase separation and crystallization in the polymer blend. The time-dependent structural evolution extracted from the SAXS/WAXS/DSC results can be characterized by the following four stages in the PCL crystallization process: the induction (I), nucleation (II), growth (III), and late (IV) stages. The influence of the liquid-liquid phase separation on the crystallization of PCL was also observed by phase-contrast microscope and polarized microscope with 1/4$\lambda$ compensator.

• 한국진공학회지
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• 제4권S1호
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• pp.97-101
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• 1995

We report the results of a real-time synchrotron x-ray scattering study of the growth of TiN thin films on Si(001) substrates by RF sputtering. Our experiemnts show that the morphology of the TiN films strongly depends on growth conditions. After the nucleation and growth takes place with random crystallographic orientation at the very early stage, the films grow with a preferred orientation. Such preferred orientation was found to depend on both the sputtering power and the carrier gases used in the sputtering. Generally, the final morphology assumes either(111) or (002) crystallographic orientation. Using Ar sputtering, a cross-over effect from(002) to (111) was observed at intermediate time. The nature of the observed morphological changes is discussed.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.104.1-104.1
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• 2007

• 한국자기학회지
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• 제5권5호
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• pp.354-357
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• 1995

Measurements of X-ray diffuse scatterings were made in disordered single crystal of Fe-28.3 at%Pt Invar alloy around a 200-Bragg peak in a wide temperature range between 15 K and 300 K. Observed diffuse scatterings were almost spherical, suggesting a homogeneous disordered alloy. However, the qdependence of the observed thermal diffuse scattering was different from the usual type, indicating a possibility of existence of local distortion of lattice accompanied by a large gradient of stress.

• 한국의학물리학회지:의학물리
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• 제26권4호
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• pp.215-222
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• 2015

본 연구에서는 단일 비산란 그리드 및 다색광 x-선원을 이용하여 위상대조 x-선 영상을 용이하게 구현할 수 있는 새로운 방법을 제안한다. 제안된 신기법의 개념 입증을 위해 집속형 선형 그리드(200 lines/inch 선 밀도), 마이크로 초점 x-선관(${\sim}5{\mu}m$ 초점크기), CMOS형 평판형 검출기($48{\mu}m$ 픽셀 크기)로 실험장치를 구성하였으며, 한 번의 x-선 촬영($90kV_p$, 0.1 mAs)으로 감약대조 x-선 영상과 향상된 가시성을 지진 산란 x-선 영상 및 차분 위상대조 x-선 영상을 Fourier변조복원 기법을 적용하여 성공적으로 분리 획득하였다. 더 나아가, 감약대조 x-선 영상과 산란 x-선 영상을 합성함으로써 일반 감약대조 x-선 영상에서는 명확하게 볼 수 없는 샘플의 미세 구조를 보다 선명하게 나타냄을 확인하였다. 본 논문에서 제안한 단일 비산란 그리드 기반 위상대조 x-선 영상화 기법은 실험 구성 및 절차가 단순하고 새로운 대조도에 기반한 산란 및 위상대조 x-선 영상을 동시에 제공하기 때문에 차세대 x-선 영상화 신기법으로 다양한 응용분야에서 용이하게 적용될 수 있을 것으로 전망한다.