Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Crystallization of α-Fe2O3/AI2O3(0001) Thin films Studied by Synchrotron X-ray Scattering

α-Fe2O3/AI2O3(0001) 박막 결정화의 방사광 X-선 산란 연구

  • 조태식 (국립상주대학교 신소재공학과)
  • Published : 2002.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

The crystallization of amorphous $\alpha$-Fe$_2$O$_3$/$\alpha$-AI$_2$O$_3$(0001) thin films during thermal annealing in air has been studied using real-time synchrotron x-ray scattering. The well aligned (0.02$^{\circ}$/ FWHM) $\alpha$-Fe$_2$O$_3$and Fe$_3$O$_4$interfacial crystallites (50- -thick) coexist on the $\alpha$-AI$_2$O$_3$(0001) in the sputter-grown amorphous films at room temperature. The amorphous precursor is crystallized to the epitaxial $\alpha$-Fe$_2$O$_3$grains in three steps with annealing temperature; i ) the growth of the well aligned $\alpha$-Fe$_2$O$_3$interfacial crystallites, together with the transformation of the Fe$_3$O$_4$crystallites to the $\alpha$-Fe$_2$O$_3$ crystallites, ii ) the growth of the less aligned (3.08$^{\circ}$ FWHM)$\alpha$-Fe$_2$O$_3$grains on the well aligned grains (＞40$0^{\circ}C$), and iii) the nucleation of the other less aligned (1.39$^{\circ}$ FWHM) $\alpha$-Fe$_2$O$_3$grains directly on the $\alpha$-AI$_2$O$_3$substrate (＞$600^{\circ}C$). The effective thickness thinner than 230 may be very useful for enhancing the epitaxial quality of $\alpha$-Fe$_2$O$_3$/AI$_2$O$_3$(0001) thin films.

Keywords

References

  1. Appl. Phys. Lett. v.71 High sensitivity measurement of magnetic field using microcantilevers R.P. Cowburn;A.M. Moulin;M. E. Welland https://doi.org/10.1063/1.119381
  2. J. Appl. Phys. v.81 High harmonic generation and turbulence of magnetoelastic excitations in hematite single crystal V. Preobrazhensky;P. Pernod https://doi.org/10.1063/1.364644
  3. Phys. Rev. Lett. v.79 Atomic structure of the passive oxide film formed on iron M.F. Toney;A. J. Davenport;L.J. Oblonsky;M.P. Ryan;C.M. Vitus https://doi.org/10.1103/PhysRevLett.79.4282
  4. Phys. Rev. B. v.59 Metal oxide heteroepitaxy: Stranski-Krastanov growth for iron oxide on Pt(111) W. Weiss;M. Ritter https://doi.org/10.1103/PhysRevB.59.5201
  5. J. of KIEEME v.15 Electrical characterization and metal contacts of ZnO thin films grown by the PLD method S.C. Kang;M. W. Shin https://doi.org/10.4313/JKEM.2002.15.1.015
  6. Trans. on EEM v.1 Properties of Sr0.8Bi2.3(Ta₁-хNbх)₂O9+a thin films S.J. Park;G.E. Jang
  7. J. of KIEEME v.10 A properties of ZnO thin film deposited by magnetron sputtering and its resistivity and microstructure due to annealing S.H. Yi;Y. K. Sung;J. K. Kim
  8. Surface Science v.338 Preparation and characterization of ultra-thin iron oxide films on a Mo(100) surface J. S. Corneille;J. W. He;D.W. Goodman https://doi.org/10.1016/0039-6028(95)00567-6
  9. Jpn. J. Appl. Phys. v.35 Heteroepitaxial growth of α-Fe₂O₃thin film on (111) GGG M. Gomi;H. Toyoshima https://doi.org/10.1143/JJAP.35.L544
  10. Appl. Phys. Lett. v.75 Effects of growth temperature on GaN nucleation layers M. S. Yi;H.H. Lee;D.J. Kim;S.J. Park;D.Y. Noh;C.C. Kim;J.H. Je https://doi.org/10.1063/1.124959
  11. J. of Crystal Growth v.240 Role of interfacial crystallites in the crystallization of α-Fe₂O₃/α-Al₂O(0001) thin films S.J. Doh;J.H. Je;T.S. Cho https://doi.org/10.1016/S0022-0248(02)00908-9
  12. X-Ray Differaction B.E. Warren