• Title/Summary/Keyword: Wurtzite

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Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE) technique (HVPE법으로 성장시킨 GaN 박막의 기판에 따른 극성 특성)

  • Oh, Dong-Keun;Lai, Van Thi Ha;Choi, Bong-Geun;Yi, Seong;Chung, Jin-Hyun;Lee, Seong-Kuk;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.3
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    • pp.97-100
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    • 2008
  • Polar and non-polar GaN was grown by the HVPE on various substrates and influence of polarity has been investigated. The $10\;{\mu}m$ thickness GaN were grown by HVPE is along A-plane ($11{\bar{2}}0$), C-plane (0001) and M-Plane ($10{\bar{1}}0$) sapphire substrate respectively. Surface properties were observed by optical microscope and atomic force microscopy. High resolution X-ray diffraction (HR-XRD) confirms the wurtzite structure. The donor band exciton peak located at ${\sim}3.4\;eV$ and also located yellow luminescence peak at 2.2 eV. The polarity of the GaN film has a strong influence on the morphology and the optical properties.

Phase-and Size-Controlled Synthesis of CdSe/ZnS Nanoparticles Using Ionic Liquid (이온성 액체에 의한 CdSe/ZnS 나노입자의 상과 크기제어 합성)

  • Song, Yun-Mi;Jang, Dong-Myung;Park, Kee-Young;Park, Jeung-Hee;Cha, Eun-Hee
    • Journal of the Korean Electrochemical Society
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    • v.14 no.1
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    • pp.1-8
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    • 2011
  • Ionic liquids are room-temperature molten salts, composed of organic mostly of organic ions that may undergo almost unlimited structural variation. We approach the new aspects of ionic liquids in applications where the semiconductor nanoparticles used as sensitizers of solar cells. We studied the effects of ionic liquids as capping ligand and/or solvent, on the morphology and phase of the CdSe/ZnS nanoparticles. Colloidal CdSe/ZnS nanoparticles were synthesized using a series of imidazolium ionic liquids; 1-R-3-methylimidazolium bis(trifluoromethylsulfonyl) imide ([RMIM][TFSI]), where R = ethyl ([EMIM]), butyl ([BMIM]), hexyl ([HMIM]), octyl ([OMIM]). The average size of nanoparticles was 8~9 nm, and both zinc-blende and wurtzite phase was produced. We also synthesized the nanoparticles using a mixture of trihexyltetradecylphosphonium bis(trifluoromethylsulfonyl)imide ([$P_{6,6,6,14}$][TFSI]) and octadecene (ODE). The CdSe/ZnS nanoparticles have a smaller size (5.5 nm) than that synthesized using imidazolium, and with a controlled phase from zinc-blende to wurtzite by increasing the volume ratio of [$P_{6,6,6,14}$][TFSI]. For the first time, the phase and size control of the CdSe/ZnS nanoparticles was successfully demonstrated using those ionic liquids.

A Study on the Radiative Recombination Coefficients based on the two band model in Light Emitting Diodes (2-밴드 모델을 이용한 발광다이오드의 발광 재결합계수에 대한 이론적 고찰)

  • Kim, Hyeon-Seong;Sim, Jong-In
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.365-366
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    • 2008
  • The spontaneous emission spectrum and the radiative recombination coefficient were analytically derived from the two band model for both the bulk (3-D) and the quantum well(2-D) structures of GaN-based Wurtzite crystal.

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Electrochemical Deposition of $CdSe_xTe_{1-x}$ Thin Films and Analysis of Their Crystal Structure (전착법에 의한 $CdSe_xTe_{1-x}$ 박막의 제작과 결정구조 분석)

  • Kim, Young-You;Lee, Ki-Seon
    • Solar Energy
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    • v.10 no.3
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    • pp.53-59
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    • 1990
  • [ $CdSe_xTe_{1-x}$ ] ($0{\le}x{\le}1$) thin films were deposited cathodically on Ti substrates in aqueous sulfric acid solution containing 1M $CdSO_4$ and 1mM$(TeO_2+SeO_2)$. The limiting current was observed in deposition potential ranging from -0.20 to -0.65 vs.Ag/AgCl ; although its value has changed a little depending on the mole ratio x, the limiting current was almost constant in deposition potential of -0.45V in spite of the change of mole ratio x. The crystal structure of the $CdSe_xTe_{1-x}$ thin films was cubic zinc-blonde in the range of mole ratio $x=0{\sim}0.8$, and hexagonal wurtzite in the mole ratio x=1 When the mole ratio changed from x=0 to x=0.8, diffraction peaks was shifted to the larger diffraction angle.

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Characterization of GaN and InN Nucleation Layers by Reflection High Energy Electron Diffraction (RHEED에 의한 GaN, InN 핵생성층의 열처리 효과 분석)

  • Na, Hyunseok
    • Journal of the Korean Society for Heat Treatment
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    • v.29 no.3
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    • pp.124-131
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    • 2016
  • GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.

Crystal Structure and Optical Absorption of ZnO Thin Films Grown by Electrodeposition (전착법에 의한 ZnO 박막의 결정구조 및 광흡수 특성)

  • Choi, C.T.;Seo, J.N.
    • Journal of Sensor Science and Technology
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    • v.9 no.6
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    • pp.455-460
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    • 2000
  • Zinc oxide(ZnO) thin films were cathodically deposited on ITO glass from an aqueous zinc nitrate electrolyte. Three main fabrication parameters were taken into account : deposition potential, solution concentration and growth temperature. Different layers of ZnO thin films grown by varying the three parameters were studied by X-ray diffraction, scanning electron microscope and optical absorption spectroscopy. The prepared ZnO thin films were shown as a hexagonal wurtzite structure on the X-ray diffraction patterns and the good quality of ZnO thin films were obtained by potentiostatic cathodic deposition at -0.7V vs. Ag/AgCl reference electrode onto ITO glass from aqueous 0.1 mol/liter zinc nitrate electrolyte at $60^{\circ}C$.

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Synthesis of CdS Nanocrystals with Different Shapes via a Colloidal Method

  • Bai, Jie;Liu, Changsong;Niu, Jinzhong;Wang, Hongzhe;Xu, Shasha;Shen, Huaibin;Li, Lin Song
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.397-400
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    • 2014
  • Size- and shape-controlled monodisperse wurtzite structured CdS nanorods have been successfully synthesized using a facile solution-based colloidal method. Depending on the control of injection/growth temperatures and the variation of Cd-to-S molar ratios, the morphology of the CdS nanocrystals (NCs) can be adjusted into bullet-like, rod-like, and dot-like shapes. X-ray diffraction (XRD), transition electron microscopy (TEM), and absorption spectroscopy were used to characterize the structure, morphology, and optical properties of as-synthesized CdS NCs. It was found that uniform CdS nanorods could be successfully synthesized when the injection and growth temperatures were very high (> $360^{\circ}C$). The aspect ratios of different shaped (bullet-like or rod-like) CdS NCs could be controlled by simply adjusting the molar ratios between Cd and S.