• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.2
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• pp.318-327
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• 2002

In this paper, heat transfer and pressure oscillation characteristics on oscillating capillary tube heat pipe(OCHP) according to input heat flux, mixture ratio of working fluid and inclination angle were investigated and were compared single working fluid(R-142b) with binary mixture working fluid(R-142b-Ethano1). OCHP was made to serpentine structure of loop type with 10 turns by drilling the channels of length 220mm, width 1.5mm, and depth 1.5mm on the surface of brass plate. In this study, R-l42b and R-l42b-Ethanol were used as working fluids, the charging ratio of working fluids was 40(vol.%), the input heat flux to evaporating section was changed from 0.3W/㎠ to 1.8W/㎠, and mixture ratio of working fluid was R(100%), R(95%)-E(5%), R(90%)-E(10%), and R(85%)-E(15%). From the experimental results, it was found that the effective thermal conductivity of single working fluid was better than that of binary mixture working fluid. But, in case of binary mixture working fluid, critical heat flux was higher than that of single working fluid. And, the higher the mixture ratios of working fluid, the lower heat transfer performance. In case of pressure oscillation, as the inclination angle was lower, pressure wave was more irregular. These phenomena were more serious when the working fluid was binary mixture. Besides, when mixture ratio was higher, saturated pressure was increased, more irregular wave was observed and the mean amplitude was increased. For the same input heat flux, inclination angle and charging ratio, when pressure oscillation has sinusoidal wave, mean amplitude was small, and saturated pressure was low value, the heat transfer was excellent.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• 유체기계공업학회:학술대회논문집
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• 1999.12a
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• pp.109-113
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• 1999

Thermal mass flow meter (TMF) is used measuring the small mass flow rate of gases. Generally, flow rate measuring accuracy of TMF is $\pm2{\%}$ of full scale. TMF is manufactured for specified working pressure and specified working gas by customer. If it were applied for different working pressure and gases, flow rate measurement accuracy decreased dramatically. In this study, a TMF tested with three different gases and pressure range of 0.2 MPa to 1.0 MPa. Effect of specific heat cause to increase flow measurement error as much as ratio of specific heat compare with reference gas. Pressure change cause to increase flowrate measurement deviation about $-0.2{\%}$ as the working pressure decreased 0.1 MPa.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.190-193
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• 2022

In this work, the effect of sputtering working pressure for the tellurium film and its thin-film transistor was investigated. The transfer characteristics of tellurium thin-film transistors were improved by increasing the working pressure during sputtering process. As increasing working pressure, physical and optical properties of Te films such as crystallinity, transmittance, and surface roughness were improved. Therefore, the improved transfer characteristics of Te thin-film transistors may originate from both improved interface properties between the silicon oxide gate dielectric layer and the tellurium active layer with an improved quality of Te film. In conclusion, the control of working pressure during sputtering would be important for obtaining high-performance tellurium-based thin film transistor

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.211-216
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• 2020

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30㎠/Vs) and large on/off ratio.

• Journal of Information Display
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• v.4 no.4
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• pp.25-32
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• 2003

One of the important problems in ac PDP in recent years is the misfiring of ac PDP at high ambient temperatures which consequently degrades the image quality of the ac PDP. This may be due to the change of working gas pressure and/or MgO surface characteristics at high ambient temperatures. This paper deals with the effect of working gas pressure on the misfiring of ac PDP at high ambient temperature. From this study, we found that the main cause of the misfiring at high ambient temperature is the increase in discharge firing voltage induced by increased working gas pressure

• Geomechanics and Engineering
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• v.36 no.5
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• pp.427-440
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• 2024

This study concentrates on the 301 comprehensive caving working face, notable for its considerable mining height. The roof model is established by integrating prior geological data and the latest borehole rock stratum's physical and mechanical parameters. This comprehensive approach enables the determination of lithology, thickness, and mechanical properties of the roof within 50 m of the primary mining coal seam. Utilizing the transfer rock beam theory and incorporating mining pressure monitoring data, the study delves into the geometric parameters of the direct roof, basic roof movement, and roof pressure during the initial mining process of the 301 comprehensive caving working face. The direct roof of the mining working face is stratified into upper and lower sections. The lower direct roof consists of 6.0 m thick coarse sandstone, while the upper direct roof comprises 9.2 m coarse sandstone, 2.6 m sandy mudstone, and 2.8 m medium sandstone. The basic roof stratum, totaling 22.1 m in thickness, includes layers such as silty sand, medium sandstone, sandy mudstone, and coal. The first pressure step of the basic roof is 61.6 m, with theoretical research indicating a maximum roof pressure of 1.62 MPa during periodic pressure. Extensive simulations and analyses of roof subsidence and advanced abutment pressure under varying working face lengths. Optimal roof control effect is observed when the mining face length falls within the range of 140 m-155 m. This study holds significance as it optimizes the working face length in thick coal seams, enhancing safety and efficiency in coal mining operations.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.950-956
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• 1995

Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• Journal of Mechanical Science and Technology
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• v.17 no.10
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• pp.1533-1542
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• 2003

In the present study, the characteristics of pressure oscillation and heat transfer performance in an oscillating capillary tube heat pipe were experimentally investigated with respect to the heat flux, the charging ratio of working fluid, and the inclination angle to the horizontal orientation. The experimental results showed that the frequency of pressure oscillation was between 0.1 Hz and 1.5 Hz at the charging ratio of 40 vol.%. The saturation pressure of working fluid in the oscillating capillary tube heat pipe increased as the heat flux was increased. Also, as the charging ratio of working fluid was increased, the amplitude of pressure oscillation increased. When the pressure waves were symmetric sinusoidal waves at the charging ratios of 40 vol.% and 60 vol.%, the heat transfer performance was improved. At the charging ratios of 20 vol.% and 80 vol.%, the waveforms of pressure oscillation were more complicated, and the heat transfer performance reduced. At the charging ratio of 40. vol.%, the heat transfer performance of the OCHP was at the best when the inclination angle was 90$^{\circ}$ the pressure wave was a sinusoidal waveform, the pressure difference was at the least, the oscillation amplitude was at the least, and the frequency of pressure oscillation was the highest.