• Current Optics and Photonics
• /
• v.1 no.3
• /
• pp.221-227
• /
• 2017

To apply a square-shaped beam homogenizer to laser shock peening, it should be designed with a long working distance and by considering metal targets with various shapes and textures. For long working distances, a square-shaped beam homogenizer with a long depth of focus is required. In the range of working distance, the laser beam is required to have not only high efficiency but high uniformity, in other words, a good peening quality is guaranteed. In this study, we defined this range as the working distance for laser shock peening. We have simulated the effect of some parameters on the working distance. The parameters include the focal length of the condenser lens, pitch size of the array lens, and plasma threshold of the metal. The simulation was performed through numerical analysis by considering the diffraction effect.

• Journal of the Korean Applied Science and Technology
• /
• v.26 no.1
• /
• pp.69-73
• /
• 2009

Copper alloy metal fiber was incorporated into the conventional water-soluble metal working fluids to increase the antimicrobial activity. Fluid treated by copper alloy metal fiber is shown that bacteria is disappeared whereas that untreated metal fiber is increased bacteria as increasing the life time. When the electrochemical potential of Cu/Zn ion is -268mV, radicals with molecular oxygen are easily made. Especially, hydroperoxide radical shows strong toxicity to the strains, leading to the conformational change of plasma membrane. As a result antimicrobial activity of copper alloy metal fiber in metal working fluid is superior to that of copper fiber.

• Journal of Information Display
• /
• v.4 no.4
• /
• pp.25-32
• /
• 2003

One of the important problems in ac PDP in recent years is the misfiring of ac PDP at high ambient temperatures which consequently degrades the image quality of the ac PDP. This may be due to the change of working gas pressure and/or MgO surface characteristics at high ambient temperatures. This paper deals with the effect of working gas pressure on the misfiring of ac PDP at high ambient temperature. From this study, we found that the main cause of the misfiring at high ambient temperature is the increase in discharge firing voltage induced by increased working gas pressure

• Journal of Advanced Marine Engineering and Technology
• /
• v.32 no.2
• /
• pp.262-267
• /
• 2008

Plasma immersion ion beam (PIIB) nitriding process is an environmentally benign and cost-effective process, and offers the potential of producing high dose of nitrogen ions in a way of simple, fast and economic technique for the high plasma flux treatment of large surface area with nitrogen ion source gas. In this report PIIB nitriding technique was used for nitriding on austenite stainless steel of AISI304 with plasma treatment at $250{\sim}500^{\circ}C$ for 4 hours, and with the working gas pressure of $2.67{\times}10^{-1}$ Pa in vacuum condition. This PIIB process might prove the advantage of the low energy high flux of ion bombardment and enhance the tribological or mechanical properties of austenite stainless steel by nitriding, Furthermore, PIIB showed a useful surface modification technique for the nitriding an irregularly shaped three dimensional workpiece of austenite stainless steel and for the improvement of surface properties of AISI 304, such as hardness and strength

• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1869-1873
• /
• 2008

In this work, to make it possible to generate glow discharge in atmospheric pressure condition with relatively high and wide electric field, micro channel reactor is proposed. Si DRIE and Cr deposition by Ebeam evaporation is used to make channel and bottom electrode layer. Upper electrode is made from ITO glass to visualize discharge within micro channel. Fabricated reactor is verified by generating uniform glow plasma with N2 / He gases each as working fluid. The range of gas electric field to generate glow plasma is from about 200 V/cm and upper limit is not observed in tested condition of up to 150 kV/cm. This data shows that micro channel plasma reactor is more versatile. Indirect estimation of electron temperature in this reactor can be inferred that the electron temperature within glow discharge in micro reactor lies $0{\sim}2eV$. This research demonstrates that the reactor is appropriate in application that needs to maintain low temperature condition during chemical process.

• Nuclear Engineering and Technology
• /
• v.56 no.2
• /
• pp.498-505
• /
• 2024

In this paper, a cable-driven endoscopic manipulator (CEM) is designed for the Chinese latest compact fusion reactor. The whole CEM arm is more than 3000 mm long and includes end vision tools, an endoscopic manipulator/control system, a feeding system, a drag chain system, support systems, a neutron shield door, etc. It can cover a range of ±45° of the vacuum chamber by working in a wrap-around mode, etc., to meet the need for observation at any position and angle. By placing all drive motors in the end drive box via a cable drive, cooling, and radiation protection of the entire robot can be facilitated. To address the CEM motion control problem, a discrete trajectory tracking method is proposed. By restricting each joint of the CEM to the target curve through segmental fitting, the trajectory tracking control is completed. To avoid the joint rotation angle overrun, a joint limit rotation angle optimization method is proposed based on the equivalent rod length principle. Finally, the CEM simulation system is established. The rationality of the structure design and the effectiveness of the motion control algorithm are verified by the simulation.

• Journal of Korean Society of Occupational and Environmental Hygiene
• /
• v.29 no.2
• /
• pp.195-207
• /
• 2019

Objectives: This study was performed to confirm whether plasma lead can be used as a chronic biomarker for the biological monitoring of exposure to lead. Methods: Lead concentrations in 66 plasma samples from retired lead workers (G.M. 60.25 years, Median 61.00 years) and 42 plasma samples from the general population (G.M. 53.76 years, Median 56.50 years) were measured using ICP/Mass. Tibia, whole blood, hemoglobin, hematocrit, and blood zinc protophorphyrin (ZPP) concentrations and urinary ${\delta}$-aminolevulinic acid (${\delta}-ALA$) were measured for correlation analysis with plasma lead. Results: The geometric mean concentration of lead in plasma was $0.23{\mu}g/L$ for the retired lead workers and $0.10{\mu}g/L$ for the general population sample. A simple correlation analysis of biomarkers showed that plasma lead concentration among the retired lead workers was highly correlated with lead concentration in the tibia and with blood lead concentration, and the plasma lead concentration among the general population correlated with ZPP concentration in the blood. The lead concentration in the tibia and the lead concentration in the whole blood increased with length of working period. As the period in the lead workplace increased, the ratio of lead in plasma to lead concentration in whole blood decreased. Conclusion: This study confirmed the possibility of a chronic biomarker of lead concentration in blood plasma as a biomarker. In the future, comparative studies with specific indicators will lead to more fruitful results.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.253-253
• /
• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.12
• /
• pp.935-938
• /
• 2011

The etching characteristics of ZnO and etch selectivities of ZnO to $SiO_2$ in $SF_6$/Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at $SF_6$(50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in $SF_6$/ Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.203-203
• /
• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.