Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Etching Characteristics of the ZnO Thin Film Using a SF6/Ar Inductively Coupled Plasma

SF6/Ar 유도결합플라즈마를 이용한 ZnO 박막의 식각 특성에 관한 연구

  • Kang, Sung-Chil (Department of Control and Instrument Engineering, Korea University) ;
  • Lee, Yoon-Chan (Department of Control and Instrument Engineering, Korea University) ;
  • Lee, Jin-Su (Department of Control and Instrument Engineering, Korea University) ;
  • Kwon, Kwang-Ho (Department of Control and Instrument Engineering, Korea University)
  • 강성칠 (고려대학교 제어계측공학과) ;
  • 이윤찬 (고려대학교 제어계측공학과) ;
  • 이진수 (고려대학교 제어계측공학과) ;
  • 권광호 (고려대학교 제어계측공학과)
  • Received : 2011.10.17
  • Accepted : 2011.10.31
  • Published : 2011.12.01
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Abstract

The etching characteristics of ZnO and etch selectivities of ZnO to $SiO_2$ in $SF_6$/Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at $SF_6$(50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in $SF_6$/ Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.

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