• Journal of the Korean Vacuum Society
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• 제1권1호
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• pp.78-82
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• 1992

The changes in work function due to hydrogen and deuterium adsorption on W(123) plane are measured by means of Field Emission Method. In the case of hydrogen or deuterium adsorption, work function of W(123) plane at 78 K increase and after a maxium value, it decrease and saturated as increasing coverage. After annealing the tungsten emission tip at 200 K, the coverage corresponding to maximum change in work function was shifted toward low coverage and the effect of work function by terraces or steps of which orientation is [ O l l ] was observed.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.198.2-198.2
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• 2014

We investigated change of the electronic structure, chemical states and elements ratio in graphene film by using photoelectron spectroscopy (PES). The graphene electrode has attracted considerable interest due to its possible applications in flexible organic light emitting diodes (F-OLEDs). However, to use the graphene for OLEDs, sufficient increase of work function is required, that is related with hole injection barrier. Plasma treatment is one of the most widely used method in OLEDs to increase the work function of the anode such as indium tin oxide (ITO). In this work, we used the plasma treatment, which is generated by various gas types such as O2, and Ar to increase the work function of the graphene film. From these results, we discuss the relation among the change of work function, plasma power, plasma treatment time and gas types.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국정보통신학회 2022년도 추계학술대회
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• pp.118-120
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• 2022

This paper investigated the change of threshold voltage according to the influence of work-function variation (WFV) of metal gate in the device structure of monolithic 3-dimension inverter (M3DINV). In addition, in order to investigate the change in threshold voltage according to the electrical coupling of the NMOS stacked on the PMOS, the gate voltages of PMOS were applied as 0 and 1 V and then the electrical coupling was investigated. The average change in threshold voltage was measured to be 0.1684 V, and they standard deviation was 0.00079 V.

• Journal of the Korean Vacuum Society
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• 제11권3호
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• pp.171-175
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• 2002

The change in work function was studied on Indium-Tin-Oxide(ITO) surface after O-plasma treatment using $\gamma$-Focused ion Beam($\gamma$-FIB). As the surface of ITO experienced more O-plasma treatment, both the surface resistivity and the work function got higher. Auger Electron Spectroscopy identified the increase of oxygen as well as the decrease of Sn. The rise of work function and surface resistivity is considered to be due to the change in oxygen and Sn on the surface of ITO.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.128-132
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• 2016

We investigated the effect of Ar ion sputtering on the surface electronic structure of indium tin oxide (ITO) using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) measurements with increasing Ar ion sputtering time. XPS measurements revealed that surface contamination on ITO was rapidly removed by Ar ion sputtering for 10 s. UPS measurements showed that the work function of ITO increased by 0.2 eV after Ar ion sputtering for 10 s. This increase in work function was attributed to the removal of surface contamination, which formed a positive interface dipole relative to the ITO substrate. However, further Ar ion sputtering did not change the work function of ITO although the surface stoichiometry of ITO did change. Therefore, removing the surface contamination is critical for increasing the work function of ITO, and Ar ion sputtering for a short time (about 10 s) can efficiently remove surface contamination.

• Journal of the Korean Statistical Society
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• 제35권1호
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• pp.1-23
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• 2006

In this paper we consider an estimation of the discontinuous variance function in nonparametric heteroscedastic random design regression model. We first propose estimators of the change point in the variance function and then construct an estimator of the entire variance function. We examine the rates of convergence of these estimators and give results for their asymptotics. Numerical work reveals that using the proposed change point analysis in the variance function estimation is quite effective.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1706-1707
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• 2007

A possibility of work function engineering on ZnO thin film is studied by in-situ and ex-situ doping process. The work function of ZnO thin film decreases with increasing boron and phosphorus doping quantity. But, the work function of Al-doped ZnO (AZO) thin film increases as the boron doping quantity incresess. The range of work function change on ZnO thin films is 3.5 eV to 5.5 eV. This result shows that the work function of ZnO thin film is indeed engineerable by changing materials of dopants and their compositional distribution of surface. We also discuss the possible mechanism of work function engineering on ZnO thin films.

• Proceedings of the Korean Statistical Society Conference
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• 한국통계학회 2002년도 추계 학술발표회 논문집
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• pp.103-108
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• 2002

We consider an estimation of discontinuous variance function in nonparametric heteroscedastic random design regression model. We first propose estimators of a change point and jump size in variance function and then construct an estimator of entire variance function. We examine the rates of convergence of these estimators and give results on their asymptotics. Numerical work reveals that the effectiveness of change point analysis in variance function estimation is quite significant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• 전기의세계
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• 제28권1호
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• pp.73-82
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• 1979

There are a great number of papers on the Townsend discharge in gases, and many of them are concerned with the effect of the cathode. It has been regarded that there are two kinds of effect of the electrodes, especially of the cathode; (a) the effect caused by the difference of the cathode material and (b) the effect by the change of the cathode surface state even in the same material. Both of them may change the secondary coefficient following after the change of the work function, and the atter may further change the primary ionization coefficient as foreign atoms on the surface may be dseorbed in sparks to decrease the purity of the gas. Thus the two effects must be investigated independently to study the roles of the cathode in gas discharges. In this report the effect of the cathode material on the sparking voltage is described. The experiment is also carried out under the condition that the desorption of impurities from the cathode be negligible. From these the new correlativity between the work function of the cathode and the sparking voltage is obtained. In addition, the interesting character of the minimum point of the Paschen's curve can be found.