한국정보디스플레이학회:학술대회논문집
- 2007.08b
- /
- Pages.1706-1707
- /
- 2007
Work function engineering on transparent conducting ZnO thin films
-
Heo, Gi-Seok
(Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology)
;
- Hong, Sang-Jin (Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology) ;
- Park, Jong-Woon (Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology) ;
-
Choi, Bum-Ho
(Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology)
;
-
Lee, Jong-Ho
(Energy and Applied Optics Team, Gwangju Research Center, Korea Institute of Industrial Technology)
;
-
Shin, Dong-Chan
(Dept. of Advanced Materials Engineering, Chosun University)
- Published : 2007.08.27
Abstract
A possibility of work function engineering on ZnO thin film is studied by in-situ and ex-situ doping process. The work function of ZnO thin film decreases with increasing boron and phosphorus doping quantity. But, the work function of Al-doped ZnO (AZO) thin film increases as the boron doping quantity incresess. The range of work function change on ZnO thin films is 3.5 eV to 5.5 eV. This result shows that the work function of ZnO thin film is indeed engineerable by changing materials of dopants and their compositional distribution of surface. We also discuss the possible mechanism of work function engineering on ZnO thin films.