• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.2014-2018
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• 2016

Transparent, conductive electrode films, showing the particular characteristics of good conductivity and high transparency, are of considerable research interest because of their potential for use in opto-electronic applications, such as smart window, photovoltaic cells and flat panel displays. Multilayer transparent electrodes, having a much lower electrical resistance than widely-used transparent conducting oxide electrodes, were prepared by using RF/DC magnetron sputtering system. The multilayer structure consisted of three layers, [NiInZnO(NIZO)/Ag/NIZO]. The optical and electrical properties of the multilayered NIZO/Ag/NIZO structure were investigated in relation to the thickness of each layer. The optical and electrical characteristics of multilayer structures have been investigated as a function of the Ag and NIZO film thickness. High-quality transparent conductive films have been obtained, with sheet resistance of $9.8{\Omega}/sq$ for Ag film thickness of 8 nm. Also the multilayer films of inserted Ag 8 nm thickness showed a high optical transmittance above 93% in the visible range. The electrical and optical properties of the new multilayer films were mainly dependent on the thickness of Ag insertion layer.

• Advances in Energy Research
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• v.5 no.3
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• pp.219-226
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• 2017

Electrochemical double layer capacitors (EDLCs) have received a tremendous interest due to their suitability for diverse applications. They have been fabricated using different carbon based electrodes including activated carbons, single walled/multi walled carbon nano tubes. But, graphite which is one of the natural resources in Sri Lanka has not been given a considerable attention towards using for EDLCs though it is a famous carbon material. On the other hand, EDLCs are well reported with various liquid electrolytes which are associated with numerous drawbacks. Gel polymer electrolytes (GPE) are well known alternative for liquid electrolytes. In this paper, it is reported about an EDLC fabricated with a nano composite polyethylene oxide based GPE and two Sri Lankan graphite based electrodes. The composition of the GPE was [{(10PEO: $NaClO_4$) molar ratio}: 75wt.% PC] : 5 wt.% $TiO_2$. GPE was prepared using the solvent casting method. Two graphite electrodes were prepared by mixing 85% graphite and 15% polyvinylidenefluoride (PVdF) in acetone and casting n fluorine doped tin oxide glass plates. GPE film was sandwiched in between the two graphite electrodes. A non faradaic charge discharge mechanism was observed from the Cyclic Voltammetry study. GPE was stable in the potential windows from (-0.8 V-0.8 V) to (-1.5 V-1.5 V). By increasing the width of the potential window, single electrode specific capacity increased. Impedance plots confirmed the capacitive behavior at low frequency region. Galvanostatic charge discharge test yielded an average discharge capacity of $0.60Fg^{-1}$.

• The Transactions of the Korea Information Processing Society
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• v.7 no.11S
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• pp.3723-3731
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• 2000

Recently, the growth of applications and services over high-speed Internet increase, ATM networks as wide area back-bone has been a major solution. The conventional TCP suite is still the standard protocol used to support upper application on current Internet and uses a window based protocol for flow control in the transport layer. When TCP data uses the UBR service in ATM layer, the control method is also buffer management. If a cell is discarded in ATM layer. one whole packet of TCP will be lost. Which is responsible for most TCP performance degradation and do not offer sufficiently QoS. To solve this problem, Several dropping strategies, such as Tail Drop, EPD, PPO, SPD, FBA, have been proposed to improve the TCP performance over ATM. In this paper, to improve the TCP fairness of end to end, we propose a packet dropping scheme algorithm using two fixed threshold. Under similar condition, we compared our proposed scheme with other dropping strategies. Although the number of VC is increased, simulation results showed that the proposed scheme can allocate more fairly each VC than other schemes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Advances in materials Research
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• v.8 no.1
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• pp.37-46
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• 2019

Electrochemical double layer capacitors (EDLCs) which are fabricated using carbon based electrodes have been emerging at an alarming rate to fulfill the energy demand in the present day world. Activated charcoal has been accepted as a very suitable candidate for electrodes but its cost is higher than natural graphite. Present study is about fabrication of EDLCs using composite electrodes with activated charcoal and Sri Lankan natural graphite as well as a gel polymer electrolyte which is identified as a suitable substitute for liquid electrolytes. Electrochemical Impedance Spectroscopy, Cyclic Voltammetry and Galvanostatic Charge Discharge test were done to evaluate the performance of the fabricated EDLCs. Amount of activated charcoal and natural graphite plays a noticeable role on the capacity. 50 graphite : 40 AC : 10 PVdF showed the optimum single electrode specific capacity value of 15 F/g. Capacity is determined by the cycling rate as well as the potential window within which cycling is being done. Continuous cycling resulted an average single electrode specific capacity variation of 48 F/g - 16 F/g. Capacity fading was higher at the beginning. Later, it dropped noticeably. Initial discharge capacity drop under Galvanostatic Charge Discharge test was slightly fast but reached near stable upon continuous charge discharge process. It can be concluded that initially some agitation is required to reach the maturity. However, the results can be considered as encouraging to initiate studies on EDLCs using Sri Lankan natural graphite.

• Journal of KIISE:Information Networking
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• v.31 no.6
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• pp.595-607
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• 2004

Networks often evolve to provide a host with multiple access points to the Internet. In this paper, we propose a transport layer load distribution mechanism utilizing the multiple network interfaces simultaneously. We specifically propose an extension of Stream Control Transmission Protoco1 (SCTP) to have load sharing over multiple network interfaces. We named the particular service provided by the Proposed load sharing mechanism to be LS (Load Sharing) mode service. LS mode service is based on the following four key elements: (i) the separation of flow control and congestion control, (ii) congestion window based striping, (iii) redundant packet retransmission for fast packet loss recovery, (iv) a novel mechanism to keep track of the receiver window size with the SACKS even if they arrive out-of-order. Through simulations, it is shown that the proposed LS mode service can aggregate the bandwidth of multiple paths almost ideally despite of the disparity in their bandwidth. When a path with a delay of 100% greater is utilized as the second path, the throughput is enhanced about 20%.

• Journal of Korea Society of Industrial Information Systems
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• v.22 no.1
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• pp.33-40
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• 2017

In this Paper, Analyse the Steady State Behavior of TCP and TFRC with Packet Error when both TCP and TFRC Flows Co-exist in the Network. First, Model the Network with TCP and TFRC Connections as a Discrete Time System. Second, Calculate Average Round Trip Time of the Packet Between Source and Destination on Packet Loss Environment. Then Derive the Steady State Performance i.e. Throughput of TCP and TFRC, and Average Buffer Size of RED Router Based on the Analytic Network Model. The Throughput of TCP and TFRC Connection Decrease Rapidly with the Growth of Sending Window Size and Their Transmission Rate but Their Declines become Smoothly when the Number of Sending Window Arrives on Threshold Value. The Average Queue Length of RED Router Increases Slowly on Low Transmission Rate but Increases Rapidly on High Transmission Rate.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Journal of IKEEE
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• v.19 no.3
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• pp.385-391
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• 2015

In this paper, we analyze the communication performance in a time synchronous multi-channel environment and deal with a packet collision avoidance technique to improve it based on IEEE1609.4 for increasing the efficiency of the control channel IEEE802.11p WAVE communication system. In previous works, they tried to solve this problem by message scheduling method on application layer software or changing the value of the random back-off optionally Contention Window. In this paper, we propose a method for adjusting the Channel Guard Interval for packet collision avoidance. The performance was evaluated by the actual vehicle test. The result was confirmed performance over 90% PDR(Packet Delivery Ratio).