• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1154-1161
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• 2015

This paper presents a semi-lumped balun transformer using conventional PCB process and its design theory and geometry for the maximally flat response and wide bandwidth using magnetically coupled LC resonators. The proposed balun is comprised of two pairs of coupled resonators which share one among three LC resonators. It provides an identical magnitude and phase difference of 180° between two balanced ports with DC isolation and an impedance transformation characteristic. Theoretical design and analysis were performed to optimize the inductance and capacitance values of proposed balun device for obtaining the wide bandwidth and maximally flat response in its pass-band. Three balun transformers with a center frequency of 500 MHz were demonstrated for proving the concept of design proposed. They were fabricated by using lumped chip capacitors and planar inductors embedded into a conventional 4-layered PCB substrate. They exhibited a maximum magnitude difference of 0.8 dB and phase difference within 2.4 degrees.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.630-632
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• 2016

In this paper, we propose a modified rhombus slot UWB(Ultra Wide Band) antenna with fork-shaped feeding structure. The proposed modified rhombus slot structure is eliminated upper and lower part of the basic rhombus slot shape to get ultra-wideband characteristics for UWB communication. Also, feeding structure is used to fork-shaped structure to get ultra-wideband characteristics. The antenna is designed on an FR-4 substrate of which the dielectric constant is 4.4, and its overall size is $34mm(W1){\times}34mm(L1){\times}1mm(t)$, and its slot antenna size is $30mm(W2){\times}16.75mm(L3+L4)$. After the optimized process, the proposed antenna is fabricated and measured. Measured result. fabricated antenna satisfied -10 dB impedance bandwidth in UWB frequency band (3.1 ~ 10.6 GHz ). And measured results of gain and radiation patterns characteristics displayed determined for operating bands.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.41 no.2
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• pp.37-44
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• 2004

In this paper, we performed the design and the development of the wide-band correlation board to be an important role in the autocorrelation spectrometer's building for the observation study of an extra-galaxy's spectral lines and the survey research of the special radio sources in field of the radio astronomy. In this research, the developed correlation board by using QUAINT correlator chip(made by NRAO) has maximum 100 MHz clock speed and operate at a intermediate frequency with 400 MHz bandwidth. For the Performance test we supply the 0.5 and 1.67 MHz rectangular wave, then we obtain the autocorrelation coefficients. The final results, which process by using FFT, get the almost same results compare with the theoretical correlation.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.4
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• pp.39-45
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• 2015

In this paper, variable rate CDR(Clock and Data Recovery) circuit adopting blind oversampling architecture is presented. The clock recovery circuit is implemented by using wide range voltage controlled oscillator and band selection method and the data recovery circuit is designed to digital circuit used majority voting method in order to low power and small area. The designed low power variable clock and data recovery is implemented by wide range voltage controlled oscillator and digital data recovery circuit. The designed variable rate CDR is operated from 10 bps to 2 Mbps. The total power consumption is about 4.4mW at 1MHz clock. The supply voltage is 1.2V. The designed die area is $120{\mu}m{\times}75{\mu}m$ and this circuit is fabricated in $0.13{\mu}m$ CMOS process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.117-122
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• 2001

In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.

• Journal of Surface Science and Engineering
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• v.48 no.1
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• pp.7-10
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• 2015

Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem of annealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics such as on/off ration and mobility of device were investigated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.6
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• pp.969-975
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• 2000

New class of three dimensional (3-D) micromachined microwave planar filters at K and Ka-band are presented using LIGA micro-machined process. The K-and Ka-band filters show wide bandpass characteristics of~36% and ~39% with the insertion loss 1.26dB at 19.11GHz and 1.7dB at GHz, respectively. These filters can be applicable in high power MMIC of MIMIC.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.230-235
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• 2003

In the micro hole punching, the size and shape of burr and burnish zone are very important factors to evaluate quality of micro holes which depend on punch-die clearance, stain rate, workpiece material and etc. To get micro holes with small burr and wide burnish zone for industrial demands, not only the parametric study but also a study on fracture behavior in shear band are necessary. In this study, 100 $\mu\textrm{m}$, 25 $\mu\textrm{m}$ micro holes in diameter were fabricated on brass (Cu63/Zn37) and SUS 316 foils as aspect ratio 1:1, and the characteristics of micro holes was investigated comparing with man holes over several mm by scanning electron microscopic views and section views. Like macro hole, micro hole is also composed of 4 portions, rollover, burnish zone, fracture zone and it shows similar fracture behavior in shear band, but？ by high strain rate (10$^2$∼ 10$^3$s$\^$-1/) unlike macro hole fabrication and increment of relative grain size several different results are shown.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.9C
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• pp.1306-1315
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• 2004

UWB, which is now in a process of being standardized in WPAN communication, has some problems such as difficulty of implementation and interference with existing systems. To overcome these problems we will explain the MIMO structure to alleviate difficulties of implementation. In this paper we propose the UWB transceiver structure using multiband scheme to mitigate narrow band interference from PCS Of WLAN which is widely used these days and analyze the effect of noise and narrow band interference by simulation based on numerical analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.376-379
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• 2016

In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.