• Bulletin of the Korean Chemical Society
• /
• 제33권2호
• /
• pp.398-402
• /
• 2012

ZnSe/$SiO_2$ coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of $SiO_2$. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/$SiO_2$ coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the $SiO_2$-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.

• 전자공학회논문지
• /
• 제51권1호
• /
• pp.90-96
• /
• 2014

본 논문은 광대역 특성의 뱅뱅 디지털 위상 동기 루프를 설계함에 있어 최적의 루프 이득 선정을 통한 실용적인 선형화 설계 기법을 제안한다. 기존의 이론적 파라미터 설계 기법을 광대역 클럭 발생기 회로에 적용함에 있어 한계점을 설명하고 실제 구현된 뱅뱅 디지털 위상 동기 루프 설계에 대해서 살펴보았다. 본 논문에서는 정수 어레이와 디더 이득은 크게 하되 비례 이득을 작게 설정하여 뱅뱅 디지털 위상 동기 루프의 리미티드 사이클 노이즈를 제거하였다. 제안된 설계 기법을 적용한 뱅뱅 디지털 위상 동기 루프는 기존의 구조에 비교하여 초소형, 저전력, 선형 특성 및 루프 대역폭 조절이 가능한 장점을 보이며, 성능의 우수성을 시뮬레이션을 통하여 검증하였다.

• 한국정밀공학회지
• /
• 제21권8호
• /
• pp.120-128
• /
• 2004

The impulse between launch vehicle and atmosphere can generate a lot of noise and vibration during the process of launching a satellite. Structurally, the electronic equipment of a satellite consists of an aluminum case containing PCB. Each PCB has resistors and IC. Noise and vibration of the wide frequency band are transferred to the inside of fairing, subsequently creating vibration of the electronic equipment of the satellite. In this situation, random vibration can cause malfunctioning of the electronic equipment of the device. Furthermore, when the frequency of random vibration meets with natural frequency of PCB, fatigue fracture may occur in the part of solder joint. The launching environment, thus, needs to be carefully considered when designing the electronic equipment of a satellite. In general, the safety of the electronic equipment is supposed to be related to the natural frequency, shapes of mode and dynamic deflection of PCB in the electronic equipment. Structural vibration analysis of PCB and its electronic components can be performed using either FEM or vibration test. In this study, the natural frequency and dynamic deflection of PCB are measured by FEM, and the safety of the electronic components of PCB is evaluated according to the results. This study presents a unique method for finite element modeling and analysis of PCB and its electronic components. The results of FEA are verified by vibration test. The method proposed herein may be applicable to various designs ranging from the electronic equipments of a satellite to home electronics.

• 한국음향학회지
• /
• 제16권3호
• /
• pp.86-93
• /
• 1997

본 연구에서는 필터의 길이를 최소로 유지하면서 원하는 목표 주파수 사양을 만족하는 최적화 설계 방법을 제시하였다. 또한, 통과 대역에서의 리플과 군지연 특성을 진폭 특성과 함께 설계에 반영할 수 있는 최적화 평가함수의 고속 계산 알고리듬을 제안하였으며, 이를 설계 시뮬레이터로 구현하여 그래픽 사용자 인터페이스를 갖는 설계 시뮬레이션 Tool을 제작하였다. 제안된 최적화 설계 알고리듬과 설계 시뮬레이션 Tool은 Chip 크기 및 적용 회로의 패키지 크기가 제한적인 이동통신기기용 SAW 필터의 설계 및 시뮬레이션 분야에 활용될 수 있을 것으로 기대되며, 이러한 최적화 설계 기술은 FPLMTS와 같은 광대역의 이동통신기기용 대역통과 필터의 설계에 적용될 수 있을 것으로 사료된다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제17권4호
• /
• pp.499-504
• /
• 2017

A UHF CMOS variable gain low-noise amplifier (LNA) is designed for mobile digital TV tuners. The proposed LNA adopts a feedback topology to cover a wide frequency range from 474 to 868 MHz, and it supports the notch filter function for the interoperability with the GSM terminal. In order to handle harmonic distortion by strong interferers, the gain of the proposed LNA is step-controlled while keeping almost the same input impedance. The proposed LNA is implemented in a $0.11{\mu}m$ CMOS process and consumes 6 mA at a 1.5 V supply voltage. In the measurement, it shows the power gain of greater than 16 dB, NF of less than 1.7 dB, and IIP3 of greater than -1.7 dBm for the UHF band.

• 한국레이저가공학회지
• /
• 제17권4호
• /
• pp.1-6
• /
• 2014

Femtosecond laser induced shock generation in water and vitreous humor of enucleated porcine eyeball was investigated. When focusing the femtosecond laser into the liquid mediums, the acoustic waves with a frequency of about 15.6kHz could be observed by using wide-band microphone. The amplitude of the acoustic signals from water has attained a maximum under a laser power of about 5mW. Further increment of the power results in a decrement of the acoustic signals due to nonlinear optical process including filamentation of laser beam. We have further investigated the effect of femtosecond laser induced acoustic waves by applying the laser pulse into enucleated porcine eyeball. The comparative studies on both healthy and diseased eyeballs led us propose that the femtosecond laser pulses could be utilized as a novel tools for treatment of partially detached retina layers from their choroid structures.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2007년도 추계종합학술대회
• /
• pp.200-203
• /
• 2007

넓은 에너지 갭의 물질인 탄화규소(4H)기판을 사용하여, 초고내압을 위한 접합장벽 쇼트키 구조의 소자를 설계하여 제작하였다. 측정결과로써 소자의 역방향 I-V 특성은 1000V 이상의 항복전압을 보였고 p-grid의 설계 최적 길이는 $3{\mu}m$ 간격이였다. 이 연구에서는 제작한 소자의 공정 조건 파라미터들을 사용하여 I-V 특성을 모델링 하였고 I-V 특성 파라미터들을 추출하여 실제 소자 파라미터와 비교, 분석하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.364.2-364.2
• /
• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.292-292
• /
• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 태양에너지
• /
• 제5권2호
• /
• pp.46-53
• /
• 1985

Hydrogenated amorphous silicon solar cells which are fabricated by photo-chemical vapor deposition (photo-CVD) system has been investigated. In the photo-CVD system which consists of three separate reaction chambers, low-pressure mercury lamp has been used as a light source. The main reactant ($Si_2H_6/He$) gases which are premixed with a small amount of mercury vapor in a mercury-vaporizer kept at $50^{\circ}C$ have been used. Using $C_2H_2$ and $SiH_2(CH_3)_2$ as the carbon source, p-type wide band gap a-SiC:H films have been obtained. The result has been found that the undoped layers of the pin/substrate solar cells are influenced by the residual impurities, such as phosphorus and boron during the deposition process. By minimizing the effect of the impurities in the i-layer and optimizing conditions at the p-layer and p/i interface, the energy conversion efficiency of 9.61 % under AM-1 ($100mW/Cm^2$) has been achieved for pin/substrate solar cells illuminated through their p-layers, using the three separate reaction chamber apparatus. It is expected that a-SiC:H solar cells with the energy conversion efficiency over 10% have been fabricated by Photo-CVD method.