• KSBB Journal
• /
• v.22 no.4
• /
• pp.244-248
• /
• 2007

The treatment of a model wastewater containing high concentration, 10 $g/{\ell}$, of phenol in an integrated wet oxidation-aerobic biological treatment was investigated. Partial wet oxidation under mild operating conditions was capable of converting the original phenol to biodegradable organic acids such as maleic acid, formic acid and acetic acid, the solution of which was subjected to the subsequent aerobic biological treatment. The wet oxidation was carried out at 150$^{\circ}C$ and 200$^{\circ}C$ and the initial pH of 1 to 12. The high temperature of 200$^{\circ}C$ and the acidic initial condition in the wet oxidation led to effluents of which biodegradability was higher in the subsequent biological oxidation process, as assessed by chemical oxygen demand (COD) removal. Homogeneous catalyst of $CuSO_4$ was also used for increasing the oxidation rate in the wet oxidation at 150$^{\circ}C$ and initial pH of 3.0. However, the pretreatment with the catalytic wet oxidation resulted in effluents which were less biodegradable in the aerobic biological process compared to those out of the non-catalytic wet oxidation at the same operating conditions.

• KSBB Journal
• /
• v.23 no.3
• /
• pp.245-250
• /
• 2008

The treatment of a model wastewater containing quinoline in an integrated wet oxidation-aerobic biological treatment was investigated. Partial wet oxidation under mild operating conditions was capable of converting the original quinoline to biodegradable organic acids such as nicotinic, formic and acetic acid, the solution of which was subjected to the subsequent aerobic biological treatment. The wet oxidation was carried out at 250$^{\circ}C$ and the initial pH of 7.0, and led to effluents of which nicotinic acid was oxidized through 6-hydroxynicotinic acid by a Bacillus species in the subsequent aerobic biological treatment. Either homogeneous catalyst of $CuSO_4$ or phenol, which is more degradable in the wet oxidation compared to quinoline, was also used for increasing the oxidation rate in the wet oxidation of quinoline at 200$^{\circ}C$. The oxidation of quinoline in the catalytic wet oxidation and the wet co-oxidation with phenol resulted in effluents of which nicotinic acid was biodegradable earlier in the aerobic biological treatment compared to those out of the non-catalytic wet oxidation at 250$^{\circ}C$. However, the lag phase in the biodegradation of nicotinic acid formed out of the wet oxidation at 250$^{\circ}C$ was considerably shortened after the adaptation of Bacillus species used in the aerobic biological treatment with the effluents of the quinoline wet oxidation.

• Proceedings of the SAREK Conference
• /
• 2009.06a
• /
• pp.392-397
• /
• 2009

Gravity pressure vessels find their use in the wet oxidation of sewage sludge, which can be defined as the oxidation of organic and inorganic substances in an aqueous solution or suspension by means of oxygen or air at elevated pressures and temperatures. Numerical analyses were carried out for investigating the flow characteristics and wet air oxidation in the reaction vessel with various conditions such as supply oxidation and the supply positions of oxidation, etc. Wet air oxidation is promoted in the vicinity of bottom in the reactor with increase of oxygen supply. Also, it is the best condition to the oxidation supply position of 150 m and oxidation flow of 0.06 kg/s in the GPV reactor as the remnant of sludge and creation of organic acids.

• Journal of the Korean Chemical Society
• /
• v.14 no.1
• /
• pp.49-50
• /
• 1970

A wet oxidation method of oxalic acid standard used in radiocarbon dating is described, and error due to possible carbon isotope fractionation during the oxidation is estimated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.104-104
• /
• 2000

MOS소자의 크기가 작아짐에 따라 gate 유전막의 두께 또한 얇아져야 한다. 두께가 얇아짐에 따라 gate 유전막으로써 기존의 SiO2는 direct tunneling으로 인해 높은 누설전류를 수반한다. 그래서 높은 유전상술르 가지는 물질들에 대한 연구의 필요성이 대두되고 있다. 그중 CVD-Ta2O5는 차세대 MOSFET소자기술에 있어서 높은 유전상수($\varepsilon$r+25)와 우수한 step coverage 때문에 각광을 받고 있는 물질중에 하나이다. 본 연구에서는 Ta2O5를 gate를 유전막으로 사용하고 RTN처리와 wet oxidation을 접목시켜 이들의 전기적인 특성을 향상시킬 수 있었다. p-형 wafer 위에 D2와 O2를 사용하여 SiO2(100 )를, NH3를 이용하여 Nitridation(10 )을 전처리로써 각각 실시하였고 그 위에 MOCVD방법으로 Ta2O5를 80 성장시켰다. 첫 번째 시편은 45$0^{\circ}C$ 10min동안 wet oxidation을 시켰고, 두 번째 시편은 $700^{\circ}C$ 60sec동안 NH3 분위기에서 RTN 처리를 하였다. 세 번째 시편은 동일조건으로 RTN 처리후 wet oxidation을 하였다. 그 후 각각의 시편을 capacitor를 제작하고 그 전기적 특성을 관찰하였다. Wet oxidation만을 시킨 시편은 as-deposited Ta2O5 시편에 비해서 -1.5V에서 누설전류는 약 2~3 order정도 감소되었고 accumulation 영역에서의 capacitance 값은 oxide층의 성장(5 )을 무시하면 거의 변화하지 않았다. RTN처리만 된 시편의 경우는 -1.5V에서 누설전류는 2~3order 정도 증가되었지만, accumulation 영역에서 capacitance 값은 거의 2qwork 증가하였다. 이 두가지 공정을 접목시킨 즉 RTN 처리후 wet oxidation 처리된 시편의 경우는 as-deposited Ta2O5 시편에 비해서 -1.5V에서 누설전류는 1 order 정도 감소하였고, accumulation 지역에서의 capacitance 값은 약 2배 증가하였다. 즉 as deposited Ta2O5 시편의 accumulation 지역의 capacitance 값은 12.8 fF/um2으로써 그 유효두께는 27.0 이었지만, RTN 처리후에 wet oxidation 시킨 시편의 accumulation 지역의 capacitance값은 21.2fF/um2으로써 그 유효두께는 16.3 이 되었다. 결론적으로 as deposited Ta2O5 시편에 RTN 처리후 wet oxidation을 실시한 결과 capacitance 값이 약 2배정도 증가하였고 누설전류는 약 1 order 정도 감소됨을 확인하였다.

• Electrical & Electronic Materials
• /
• v.4 no.1
• /
• pp.19-30
• /
• 1991

W/Si의 조성비가 2.6인 CVD텅스텐 실리사이드를 어닐링처리후 dry 또는 wet oxidation하여 폴리사이드 구조에서 다결정 Si내의 농도가 실리사이드의 산화반응속도에 미치는 영향을 조사하였다. 인의 농도에 관계없이 항상 실리사이드의 산화속도가 (100)Si의 그것보다 더 높았다. 저온에서 dry oxidation한 경우 인의 농도가 증가함에 따라 산화속도는 감소하였으나 고온에서 dry oxidation한 경우에는 P농도와 산화속도간에 상관관계가 별로 없었다. 한편, wet oxidation의 경우에는 모든 산화온도에서 인의 농도가 높을수록 실리사인의 산화속도가 더 낮은 것으로 나타났다.

• Journal of the Korean Chemical Society
• /
• v.55 no.5
• /
• pp.842-845
• /
• 2011

Wet air oxidation (WAO) of oily sludge was carried out using $Fe^{3+}$ as catalyst, placed in a 0.5 L batch autoclave in the temperature range of $250-330^{\circ}C$. Experiments were conducted to investigate the effects of temperature, the initial COD, reaction time, concentration of catalyst and $O_2$ excess (OE) on the oxidation of the oily sludge. The results showed that in the WAO 88.4% COD was achieved after 9 min reaction at temperature of $330^{\circ}C$, OE of 0.8 and the initial COD of 20000 mg/L. Temperature was found to have a significant impact on the oxidation of oily sludge. Adding a catalyst significantly improved the COD removal. Homogenous catalyst, $Fe^{3+}$, showed effective removal for pollutants. COD removal was 99.7% in the catalytic wet air oxidation (CWAO) over $Fe^{3+}$ catalyst. The results proved that the CWAO was an effective pretreatment method for the oily sludge.

• Journal of Environmental Science International
• /
• v.11 no.12
• /
• pp.1235-1242
• /
• 2002

The purpose of this study is to estimate wet deposition flux and to investigate wet deposition characteristics by using the ADOM model. Wet deposition flux of highly reactive $SO_2$ is estimated by applying observed meteorological parameters and concentrations of chemical species to the ADOM model. Wet deposition is largely dependent on large scale precipitation and cloud thickness. Wet deposition flux of sulfate depends on $SO_2$ oxidation in clouds. When large amount of $SO_2$ is converted to sulfate, deposition flux of sulfate increases, but wet deposition flux of $SO_2$ is small. On the whole, the pattern of sulfate wet deposition flux agrees with the typical pattern of sulfate wet deposition that is high in the summer(July) and low in the winter(January).

• Korean Journal of Materials Research
• /
• v.12 no.5
• /
• pp.327-333
• /
• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Proceedings of the IEEK Conference
• /
• summer
• /
• pp.343-347
• /
• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation