• Polymer(Korea)
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• v.25 no.4
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• pp.594-601
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• 2001

Direct thermal lamination of polyethylene film on aluminum plate without using adhesive was tried by modifying their surfaces to have polar groups. Polyethylene film was modified by treating with oxygen or acrylic acid plasma. Aluminum plate was modified by treating with boiling water or diaminocyclohexane plasma. Fairly high adhesion strength was obtained even in the case when only the polyethylene film was modified, and adhesion strength was so high that film was broken during the adhesion test if both the film and the aluminum plate were modified. Even chemical bonding seemed to be possible when the film treated with acrylic acid was laminated on the plate treated with diaminocyclohexane plasma by forming amide linkage through the reaction between COOH groups on the film surface and NH$_2$ groups on the plate surface.

• Polymer(Korea)
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• v.26 no.6
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• pp.778-784
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• 2002

Chemical modification of a dextran film to improve its physical properties was carried out by addition of plasticizers and crosslinking agents. Moreover, low-temperature plasma treatment with acetylene gas was done. The dextran film showed high mechanical strength but was brittle and vulnerable to moisture. When plasticizer was added, it became very soft but with large reduction of mechanical strength. However, a flexible film with fairly high mechanical strength and water resistance was prepared when the film was crosslinked by adding crosslinking agent with or after the addition of plasticizer. Treatment with an acetylene plasma changed the dextran film surface from hydrophilic to hydrophobic with little influence on the bulk properties of the film.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.247-250
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• 2008

Hafnium dioxide ($HfO_2$) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of $HfO_2$ film can be obtained with oxygen plasma and with water at relatively low temperature of $200^{\circ}C$. $HfO_2$ was deposited as a uniform rate of $1.2\;A^{\circ}$/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.250-250
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• 2009

Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.

• Journal of the Korean Applied Science and Technology
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• v.34 no.3
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• pp.595-601
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• 2017

In vivo assay of glucose detection was described using a skin tattoo film electrode (STF), and the probe was made from carbon nano tube paste modification film paper. Here in the square-wave stripping anodic working range obtained of $20-100mgL^{-1}$ within an accumulation time of 0 seconds only in sea water electrolyte solutions of pH 7.0. The relative standard deviations of 50 mg glucose that were observed of 0.14 % (n=12), respectively, using optimum stripping accumulation of 30 sec, the low detection limit (S/N) was pegged at 15.8 mg/L. The developed results can be applied to the detect of in vivo skin sensing in real time. Which confirms the results are usable for in vitro or vivo diagnostic clinical analysis.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.643-645
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• 2008

Stainless steel 304 and 316 plates were deposited with the multi-layered coatings of titanium film (0.1um) and gold film (1-2um) by an electron beam evaporation method. The XRD patterns of the stainless steel plates modified with the multi-layered coatings showed the crystalline phases of the external gold film and the stainless steel substrate. Surface microstructural morphologies of the stainless steel bipolar plates modified with multi-layered coatings were observed by AFM and FE-SEM images. The external gold films formed on the stainless steel plates showed microstructure of grains of about 100nm diameter. The grain size of the external surface of the stainless steel plates increased with the gold film thickness. The electrical resistance and water contact angle of the stainless steel bipolar plates covered with multi-layered coatings were examined with the thickness of the external gold film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.297-302
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• 2009

We have successfully fabricated the alumina thick films using inkjet printing processes without a high temperature sintering process. Alumina suspension as dielectric ink was formulated by combining nano-sized alumina powders with an anionic polymer dispersant in formamide/water as co-solvent. The thickness of the printed alumina thick film was measured at around 5 um by field emission scanning electron microscope. The calculated packing density of 68.5 % from the printed alumina thick film was much higher than the same films fabricated by conventional casting or dip coating processes. Q factor of the dielectrics thick film infiltrated with cyanate ester resin was evaluated by impedance analyzer.

• Journal of ILASS-Korea
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• v.25 no.2
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• pp.68-73
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• 2020

In the present study, experiments on the film boiling of liquid droplets on oxidized copper surface was conducted. The shape of pure water droplets was observed, and the evaporation rate of them was measured during the film boiling evaporation process. The droplet of initial volume 16 ~ 30 µl was applied onto the oxidized copper surface heated up to 300 ~ 500℃, then the shape of the droplet was analyzed during the film boiling evaporation. Experimental results showed that there was good correlation between dimensionless volume and dimensionless time. However, a significant difference in evaporation rate for small and large droplets discussed in previous study was not found.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.9-15
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• 2003

This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1326-1331
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• 2009

Drying process in the cylindrical thin film layer of sludge with the thickness less than a few millimeters has been investigated. Thin film drying is specially designed and used to dry the viscous materials like sewage sludge. The thin film layer of sludge is dried on the metallic cylindrical surface through which thermal energy is supplied to the layer during drying. The wall temperature is assumed to be constant during drying in the present study for the simplification. In order to solve the equations, the mass transfer rate on the drying surface should be determined. The mass flux of evaporated water vapor on the surface is estimated with the formulation given in the literature. The effect of some physical parameters on drying has been examined to figure out the drying characteristics of the sludge layer.