• Korean Chemical Engineering Research
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• 제46권3호
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• pp.486-491
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• 2008

상업용 12인치 급속가열장치(RTP)의 다변수 고급제어기를 개발하기 위하여 열전대가 부착된 웨이퍼를 대상으로 다변수 모델인식을 수행하였다. 웨이퍼에는 7개의 열전대가 설치되어 있으며 10개의 텅스텐-할로겐 램프 그룹으로 가열을 할 수 있다. 모델인식 실험과정에서 웨이퍼의 휨을 최소화하며 최종적으로 10-입력 7-출력의 균형 잡힌 상태공간 모델을 얻기 위한 모델인식방법을 제안하였다. 또한 넓은 온도영역에서 복사에 의한 비선형성을 가장 효과적으로 상쇄시킬 수 있는 출력변수 정의방법을 제안하였다. 600, 700, $800^{\circ}C$ 부근의 정상상태에서 실험을 수행하여 모델을 추정한 결과 상태의 차수는 80~100, 모델출력은 $y=T(K)^2$으로 결정하는 것이 바람직하며, 이때 one-step-ahead 온도예측 오차의 제곱평균은 0.125~0.135 K 정도로 나타났다.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

• 보존과학회지
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• 제38권1호
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• pp.14-32
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• 2022

Underwater photographing and image recording are essential for pre-excavation survey and during excavation in underwater archaeology. Unlike photographing on land, all underwater images suffer various quality degradations such as shape distortions, color shift, blur, low contrast, high noise levels and so on. Outcome is very often heavily photographing equipment and photographer dependent. Excavation schedule, weather conditions, and water conditions can put burdens on divers. Usable images are very limited compared to the efforts. In underwater archaeological study in very turbid water such as in the Yellow Sea (between mainland China and the Korean peninsula), underwater photographing is very challenging. In this study, off-site image distortion and color compensation techniques using an image processing/analysis software is investigated as an alternative image quality enhancement method. As sample images, photographs taken during the excavation of 800-year-old Taean Mado Shipwrecks in the Yellow Sea in 2008-2010 were mainly used. Significant enhancement in distortion and color compensation of archived images were obtained by simple post image processing using image processing/analysis software (PicMan) customized for given view ports, lenses and cameras with and without optical axis offsets. Post image processing is found to be very effective in distortion and color compensation of both recent and archived images from various photographing equipment models and configurations. Merits and demerit of in-situ, distortion and color compensated photographing with sophisticated equipment and conventional photographing equipment, which requires post image processing, are compared.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

• 디지털콘텐츠학회 논문지
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• 제14권1호
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• pp.35-40
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• 2013

연마재와 Coolant를 이용한 슬러리는 그동안 반도체 웨이퍼를 시작으로 태양광 산업의 Wire Saw에서 사용량이 급격히 증가하였다. 이에 본 논문에서는 슬러리를 분리 정제하여, 수세뿐만 아니라 화학적 처리를 통하여 보다 고순도의 실리콘카바이드 분말을 얻어, 마이크로웨이브 건조방식으로 건조하였다. 건조한 슬러리 벌크를 분쇄하고 화학적 처리까지 수행하여 제작한 Powder를 각각 열분석, 입도분석, SEM 촬영, 성분분석, XRF, XRD을 통하여 분석하였다. 본 연구 결과 화학적 처리를 통하여 얻은 Powder의 회수율이 수세 처리를 통하여 얻은 Powder 보다 더 높아지는 것을 알 수 있었다. 태양광 소재 산업에서 발생하는 다량의 슬러리를 통합, 재활용함으로 점차 강화되고 있는 국내외 환경 규제에 적극 대응하고, 관련 소재 산업의 인프라 구축 효과를 기대할 수 있다.

• 전기전자학회논문지
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• 제3권1호
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• pp.109-117
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• 1999

본 논문에서는 급속 열처리 공정에서 필수적인 빠르고 정밀한 웨이퍼의 온도제어기법을 제안하였다. Bang- Bang/PID 제어기법은 빠른 온도상승률을 만족하고, 오버슈트와 정상상태 오차를 줄이도록 한다. 즉 초기에 허용 가능한 최대전력을 공급하는 일종의 Bang-Bang 방식의 제어를 하고, 설정온도와 출력에서 측정되는 온도와의 차이가 어느 정해진 범위보다 작을 때 PID 제어를 수행한다. 또한 PID 이득을 정하기 위해 ARX 모델로 식별된 플랜트에 Kappa-Tau 동조법이 사용되었다. 개발된 제어기는 실험용 RTP 장비에 적용하여 그 성능을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.539-542
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• 2001

In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

• 한국세라믹학회지
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• 제30권9호
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

• Tribology and Lubricants
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• 제32권2호
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• 멤브레인
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• 제9권3호
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• pp.185-192
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• 1999

반도체 산업의 wafer 가공공정에서 발생하는 폐수를 재활용하고자 한외여과 공정을 이용한 막분리 공정의 도입 가능성을 검토하였다. Pilot 규모의 장치에 분획분자량이 각각 10,000, 20.000, 30,000인 한외여과막 모듈을 이용하여 투과유속 및 제거율 등을 측정하였다. 투과수의 성상은 SDI15, 탁도, 전기전도도, 실리콘 농도분석을 통해 공정수로 재이용이 가능함을 확인할 수 있었다. 투과유속 저하를 막기 위한 역세척 방법으로는 압축공기와 물은 sweeping 하는 방법이 가장 효과적이었고, 이때 투과유속의 회복율이 높게 나타났다. 분획분자량 30,000인 한외여과막에서 가장 높은 투과유속을 나타내었다. 또한 폐수의 평균 실리콘 입자 평균 함량은 3.8-5.6mg/$\ell$이고, 투과수의 실리콘 입자 함량은 0.2${\mu}g$/$\ell$이하로 나타나 제거율은약 96%이상으로 나타났다.